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Datasheet File OCR Text: |
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-220F package Complement to type 2SA1469 Low saturation voltage Excellent current dependence of hFE Short switching time APPLICATIONS Various inductance of lamp drivers for electronic equipment Inverters ,converters Switching regulator ,driver PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SC3746 Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Fig.1 simplified outline (TO-220F) and symbol CHA IN Collector current Collector-base voltage E SEM NG Open base OND IC CONDITIONS TOR UC VALUE 80 60 5 5 7 UNIT V V V A A Open emitter Collector-emitter voltage Emitter-base voltage Open collector Collector current-peak Ta=25ae 2 W 20 150 -55~150 ae ae PC Collector dissipation TC=25ae Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=1mA ;RBE= IC=10mA ;IE=0 IE=10mA ;IC=0 IC=2.5A;IB=0.125A VCB=40V; IE=0 VEB=4V; IC=0 IC=1A ; VCE=2V IC=1A ; VCE=5V 70 100 MIN 60 80 5 2SC3746 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE fT TYP. MAX UNIT V V V 0.4 0.1 0.1 280 V mA mA Switching times ton ts tf Fall time Turn-on time Storage time CHA IN R 100-200 S E SEM NG IC=2.0A; IB1=-IB2=0.1A VCC=20V ,RL=10| OND IC TOR UC 0.1 0.5 0.1 MHz |I |I |I s s s hFE Classifications Q 70-140 140-280 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3746 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3746 CHA IN E SEM NG OND IC TOR UC 4 |
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