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| SMD Type Silicon PNP Epitaxial Planar Type 2SA1739 Features High speed switching. Low collector-emitter saturation voltage VCE(sat). Transistors IC 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -15 -15 -4 -50 -100 150 150 -55 to +150 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector-base cutoff current Emitter-base cutoff current Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Symbol ICBO IEBO hFE VCE(sat) fT Cob ton Testconditons VCB = -8 V, IE = 0 VCE = -3 V, IC = 0 VCE = -1 V, IC = -10 mA IC = -10 mA, IB = -1 mA VCB = -10 V, IE = 10 mA, f = 200 MHz VCB = -5 V, IE = 0, f = 1 MHz 800 50 -0.1 1500 1 12 Min Typ Max -0.1 -0.1 150 -0.2 V MHz pF ns Unit iA iA Turn-off time toff 20 ns Storage time tstg 19 ns hFE Classification Marking Rank hFE Q 50 120 AX R 90 150 No-rank 50 150 www.kexin.com.cn 1 |
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