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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain APPLICATIONS Designed for audio amplifier and switching circuits applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6326 2N6327 2N6328 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=ae ) SYMBOL PARAMETER 2N6326 2N6327 VCBO Collector-base voltage VCEO IN Collector-emitter voltage ANG CH 2N6328 2N6326 2N6327 SEM E Open base Open emitter OND IC CONDITIONS TOR UC VALUE 60 80 100 60 80 100 UNIT V V 2N6328 Open collector VEBO IC IB PD Tj Tstg Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature 5 30 7.5 V A A W ae ae TC=25ae 200 200 -65~200 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.875 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2N6326 2N6327 2N6328 SYMBOL CONDITIONS MIN TYP. MAX UNIT 2N6326 Collector-emitter sustaining voltage 60 VCEO(SUS) 2N6327 IC=0.2 A ;IB=0 80 V 2N6328 100 VCEsat Collector-emitter saturation voltage IC=15A; IB=1.5A 1.2 V VBEsat Base-emitter saturation voltage IC=15A; IB=1.5A 1.5 V VBE Base-emitter on voltage IC=8A ; VCE=4V VCB=60V; IE=0 TC=150ae VCB=80V; IE=0 TC=150ae VCB=100V; IE=0 TC=150ae VEB=4V; IC=0 1.5 1.0 5.0 V ICBO IN Collector cut-off current 2N6326 2N6327 2N6328 IEBO Emitter cut-off current hFE-1 DC current gain ANG CH EMIC ES IC=8A ; VCE=4V IC=30A ; VCE=4V OND TOR UC 1.0 5.0 1.0 5.0 1.0 mA mA 25 hFE-2 DC current gain 6 30 fT Transition frequency IC=1A ; VCE=10V;f=1.0MHz 3 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6326 2N6327 2N6328 SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 |
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