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Datasheet File OCR Text: |
TC3989A PRE1_20070503 5.0 GHz 37 dBm Prematched FETs FEATURES ! 37dBm Typical Power at 5.0 GHz ! High Associated Gain: Ga = 9 dB Typical at 5.0 GHz ! High Efficiency: Efficiency 40 % for Class AB Operation ! Suitable for High Reliability Application ! Wg = 12 mm ! 100 % DC and RF Tested ! Flange Ceramic Package DESCRIPTION The TC3989A is a 37dBm partially prematched power FET assembled in a flange ceramic package. It requires simple matching networks to achieve high gain and high linearity for 5.0 GHz applications. All devices are 100 % DC and RF tested to assure consistent quality. ELECTRICAL SPECIFICATIONS VD=12 V, Idq=180 mA, f=5.0 GHz Parameter Freq P-1* Ga * Efficiency IDSS gm VP BVDGO Rth @ P-1 VDS=2V, VGS=0 V VDS=2 V, VGS=0 V VDS=2 V,ID=24 mA IDGO=6 mA 18 Conditions MIN 4.9 37 8 37.5 9 40 3 2000 -1.7 22 2.5 TYP MAX UNIT 5.1 GHz dBm dB % A mS Volts Volts C/W Symbol VDS VGS ID PT Pin TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Dissipation Input Power, CW Channel Temperature Storage Temperature Rating 14 V -5 V 3A 12 W 33 dBm 175 C - 65 C to +175 C PHOTO ENLARGEMENT ABSOLUTE MAXIMUM RATINGS(TA=25 C) * FET TO BE TESTED IN TRANSCOM FIXTURE. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County Taiwan, Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P1/1 |
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