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| ST203CPbF Series Vishay High Power Products Inverter Grade Thyristors (Hockey PUK Version), 370 A FEATURES * * * * * * * * * * * 370 A TO-200AB (A-PUK) PRODUCT SUMMARY IT(AV) Metal case with ceramic insulator All diffused design Center amplifying gate Guaranteed high dV/dt International standard case TO-200AB (A-PUK) Guaranteed high dI/dt High surge current capability Low thermal impedance High speed performance Lead (Pb)-free Designed and qualified for industrial level RoHS COMPLIANT TYPICAL APPLICATIONS * * * * Inverters Choppers Induction heating All types of force-commutated converters MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) TEST CONDITIONS VALUES 370 Ths 55 700 IT(RMS) Ths 50 Hz ITSM 60 Hz 50 Hz 60 Hz VDRM/VRRM tq TJ Range 25 5260 A 5510 138 126 1000 to 1200 20 to 30 - 40 to 125 V s C kA2s UNITS A C A C I2 t ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 10 ST203C..C 12 1200 1300 VDRM/VRRM, MAXIMUM REPETITIVE PEAK VOLTAGE V 1000 VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 1100 40 IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA Document Number: 94370 Revision: 30-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 1 ST203CPbF Series Vishay High Power Products Inverter Grade Thyristors (Hockey PUK Version), 370 A CURRENT CARRYING CAPABILITY ITM 180 el 180 el ITM 100 s ITM FREQUENCY UNITS 50 Hz 400 Hz 1000 Hz 2500 Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current dI/dt Heatsink temperature Equivalent values for RC circuit 860 840 700 430 50 VDRM 50 40 47/0.22 750 706 580 340 1340 1400 1350 980 50 VDRM - 1160 1220 1170 830 5620 2940 1750 910 50 VDRM - 5020 2590 1520 780 V A/s 55 47/0.22 C /F A 55 40 47/0.22 55 40 ON-STATE CONDUCTION PARAMETER Maximum average on-state current at heatsink temperature Maximum RMS on-state current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS 180 conduction, half sine wave double side (single side) cooled DC at 25 C heatsink temperature double side cooled t = 10 ms Maximum peak, one half cycle, non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t VTM VT(TO)1 VT(TO)2 rt1 rt2 IH IL No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied VALUES 370 (140) 55 (85) 700 5260 5510 4420 Sinusoidal half wave, initial TJ = TJ maximum 4630 138 126 98 89 1380 1.72 1.17 1.22 0.92 0.83 600 1000 m V kA2s kA2s A UNITS A C t = 0.1 to 10 ms, no voltage reapplied ITM = 600 A, TJ = TJ maximum, tp = 10 ms sine wave pulse (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV)), TJ = TJ maximum (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV)), TJ = TJ maximum TJ = 25 C, IT > 30 A TJ = 25 C, VA = 12 V, Ra = 6 , IG = 1 A Maximum peak on-state voltage Low level value of threshold voltage High level value of threshold voltage Low level value of forward slope resistance High level value of forward slope resistance Maximum holding current Typical latching current mA www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com Document Number: 94370 Revision: 30-Apr-08 ST203CPbF Series Inverter Grade Thyristors Vishay High Power Products (Hockey PUK Version), 370 A SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned on current Typical delay time minimum Maximum turn-off time maximum tq SYMBOL dI/dt td TEST CONDITIONS TJ = TJ maximum, VDRM = Rated VDRM ITM = 2 x dI/dt TJ = 25 C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 s Resistive load, gate pulse: 10 V, 5 source TJ = TJ maximum, ITM = 300 A, commutating dI/dt = 20 A/s VR = 50 V, tp = 500 s, dV/dt: See table in device code VALUES 1000 0.8 20 30 s UNITS A/s BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage Maximum peak reverse and off-state leakage current SYMBOL dV/dt IRRM, IDRM TEST CONDITIONS TJ = TJ maximum, linear to 80 % VDRM, higher value available on request TJ = TJ maximum, rated VDRM/VRRM applied VALUES 500 40 UNITS V/s mA TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage Maximum DC gate currrent required to trigger Maximum DC gate voltage required to trigger Maximum DC gate current not to trigger Maximum DC gate voltage not to trigger SYMBOL PGM PG(AV) IGM + VGM - VGM IGT VGT IGD VGD TJ = 25 C, VA = 12 V, Ra = 6 TJ = TJ maximum, tp 5 ms TEST CONDITIONS TJ = TJ maximum, f = 50 Hz, d % = 50 VALUES 60 10 10 20 5 200 3 20 0.25 UNITS W A V mA V mA V TJ = TJ maximum, rated VDRM applied THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink SYMBOL TJ TStg RthJ-hs DC operation single side cooled DC operation double side cooled DC operation single side cooled DC operation double side cooled TEST CONDITIONS VALUES - 40 to 125 - 40 to 150 0.17 0.08 0.033 0.017 4900 (500) 50 See dimensions - link at the end of datasheet N (kg) g K/W UNITS C Maximum thermal resistance, case to heatsink Mounting force, 10 % Approximate weight Case style RthC-hs TO-200AB (A-PUK) Document Number: 94370 Revision: 30-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 ST203CPbF Series Vishay High Power Products Inverter Grade Thyristors (Hockey PUK Version), 370 A RthJ-hs CONDUCTION CONDUCTION ANGLE 180 120 90 60 30 SINUSOIDAL CONDUCTION SINGLE SIDE 0.015 0.018 0.024 0.035 0.060 DOUBLE SIDE 0.017 0.019 0.024 0.035 0.060 RECTANGULAR CONDUCTION SINGLE SIDE 0.011 0.019 0.026 0.036 0.060 DOUBLE SIDE 0.011 0.019 0.026 0.037 0.061 TJ = TJ maximum K/W TEST CONDITIONS UNITS Note * The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC 130 130 Maximum Allowable Heatsink Temperature (C) Maximum Allowable Heatsink Temperature (C) 120 110 100 90 80 70 60 50 40 0 50 100 30 ST203C..C Series (Single side cooled) RthJ-hs (DC) = 0.17 K/W 120 110 100 90 80 70 60 50 40 30 20 250 0 100 30 60 200 ST203C..C Series (Double side cooled) RthJ-hs (DC) = 0.08 K/W O O Conduction angle Conduction angle 180 60 90 120 150 200 180 90 300 120 400 500 Average On-State Current (A) Fig. 1 - Current Ratings Characteristics Average On-State Current (A) Fig. 3 - Current Ratings Characteristics 130 120 130 Maximum Allowable Heatsink Temperature (C) 110 100 90 80 70 60 50 40 30 20 0 50 100 150 30 60 Maximum Allowable Heatsink Temperature (C) ST203C..C Series (Single side cooled) RthJ-hs (DC) = 0.17 K/W 120 110 100 90 80 70 60 50 40 30 20 30 0 100 60 90 300 ST203C..C Series (Double side cooled) RthJ-hs (DC) = 0.08 K/W O O Conduction period Conduction period DC 90 120 200 250 180 300 350 400 DC 120 400 180 500 600 700 800 200 Average On-State Current (A) Fig. 2 - Current Ratings Characteristics Average On-State Current (A) Fig. 4 - Current Ratings Characteristics www.vishay.com 4 For technical questions, contact: ind-modules@vishay.com Document Number: 94370 Revision: 30-Apr-08 ST203CPbF Series Inverter Grade Thyristors Vishay High Power Products (Hockey PUK Version), 370 A 1000 5500 180 120 90 60 30 RMS limit 5000 Maximum non-repetitive surge current versus pulse train duration. Control of conduction may not be maintained Initial TJ = 125 C No voltage reapplied Rated VRRM reapplied Maximum Average On-State Power Loss (W) 900 800 700 600 500 400 300 200 100 0 0 50 Peak Half Sine Wave On-State Current (A) 4500 4000 3500 3000 2500 O Conduction angle ST203C..C Series TJ = 125 C 100 150 200 250 300 350 400 450 ST203C..C Series 2000 0.01 0.1 1 Average On-State Current (A) Fig. 5 - On-State Power Loss Characteristics Pulse Train Duration (s) Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 1400 Maximum Average On-State Power Loss (W) 1200 1000 800 600 400 200 0 0 DC 180 120 90 60 30 RMS limit O Instantaneous On-State Current (A) 10 000 ST203C..C Series 1000 Conduction period ST203C..C Series TJ = 125 C 100 200 300 400 500 600 700 800 TJ = 25 C TJ = 125 C 100 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Average On-State Current (A) Fig. 6 - On-State Power Loss Characteristics Instantaneous On-State Voltage (V) Fig. 9 - On-State Voltage Drop Characteristics 5000 4500 1 Peak Half Sine Wave On-State Current (A) 4000 3500 3000 2500 ST203C..C Series 2000 1 10 Initial TJ = 125 C at 60 Hz 0.0083 s at 50 Hz 0.0100 s ZthJ-hs - Transient Thermal Impedance (K/W) At any rated load condition and with rated VRRM applied following surge ST203C..C Series 0.1 0.01 Steady state value RthJ-hs = 0.17 K/W (Single side cooled) RthJ-hs = 0.08 K/W (Double side cooled) (DC operation) 0.01 0.1 1 10 100 0.001 0.001 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Document Number: 94370 Revision: 30-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 ST203CPbF Series Vishay High Power Products Qrr - Maximum Reverse Recovery Charge (C) Inverter Grade Thyristors (Hockey PUK Version), 370 A 160 ST203C..C Series TJ = 125 C 200 ITM = 500 A ITM = 300 A ITM = 200 A Irr - Maximum Reverse Recovery Current (A) 250 140 120 100 80 60 40 20 0 ITM = 500 A ITM = 300 A ITM = 200 A ITM = 100 A ITM = 50 A 150 100 ITM = 100 A 50 ITM = 50 A ST203C..C Series TJ = 125 C 0 20 40 60 80 100 0 0 20 40 60 80 100 dI/dt - Rate of Fall of On-State Current (A/s) Fig. 11 - Reverse Recovered Charge Characteristics dI/dt - Rate of Fall of Forward Current (A/s) Fig. 12 - Reverse Recovery Current Characteristics 10 000 10 000 Peak On-State Current (A) Peak On-State Current (A) 100 Snubber circuit Rs = 47 Cs = 0.22 F VD = 80 % VDRM 500 200 400 50 Hz 400 500 Snubber circuit Rs = 47 Cs = 0.22 F VD = 80 % VDRM 50 Hz 200 100 1000 1500 1000 1000 2500 3000 5000 1000 2500 3000 5000 1500 10 000 tp ST203C..C Series Sinusoidal pulse TC = 40 C 1000 10 000 tp 100 10 100 100 10 10 000 ST203C..C Series Sinusoidal pulse TC = 55 C 1000 10 000 100 Pulse Basewidth (s) Fig. 13 - Frequency Characteristics Pulse Basewidth (s) 10 000 10 000 Peak On-State Current (A) 400 50 Hz 200 500 100 Peak On-State Current (A) Snubber circuit Rs = 22 Cs = 0.15 F VD = 80 % VDRM 1000 2500 3000 5000 1500 Snubber circuit Rs = 47 Cs = 0.22 F VD = 80 % VDRM 1000 2500 3000 5000 400 100 500 200 50 Hz 1000 1000 1500 100 10 000 100 10 000 tp ST203C..C Series Trapezoidal pulse TC = 40 C dI/dt = 50 A/s 1000 10 000 tp ST203C..C Series Trapezoidal pulse TC = 55 C dI/dt = 50 A/s 1000 10 000 10 10 100 10 10 100 Pulse Basewidth (s) Fig. 14 - Frequency Characteristics Pulse Basewidth (s) www.vishay.com 6 For technical questions, contact: ind-modules@vishay.com Document Number: 94370 Revision: 30-Apr-08 ST203CPbF Series Inverter Grade Thyristors Vishay High Power Products (Hockey PUK Version), 370 A 10 000 10 000 Snubber circuit Rs = 47 Cs = 0.22 F VD = 80 % VDRM 1000 2500 3000 5000 Peak On-State Current (A) 400 100 500 50 Hz 200 Peak On-State Current (A) Snubber circuit Rs = 47 Cs = 0.22 F VD = 80 % VDRM 1000 2500 3000 50 Hz 400 500 100 200 1000 1500 1000 1500 100 10 000 100 5000 tp ST203C..C Series Trapezoidal pulse TC = 40 C dI/dt = 100 A/s 1000 10 000 10 000 tp ST203C..C Series Trapezoidal pulse TC = 55 C dI/dt = 100 A/s 1000 10 000 10 10 100 10 10 100 Pulse Basewidth (s) Fig. 15 - Frequency Characteristics Pulse Basewidth (s) 100 000 100 000 Peak On-State Current (A) Peak On-State Current (A) tp ST203C..C Series Rectangular pulse dI/dt = 50 A/s 20 joules per pulse 10 10 000 20 joules per pulse 10 10 000 1000 0.3 0.2 0.1 1 4 2 0.5 1000 0.5 0.3 3 1 2 5 100 ST203C..C Series Sinusoidal pulse tp 100 0.2 0.1 10 10 100 1000 10 000 10 10 100 1000 10 000 Pulse Basewidth (s) Pulse Basewidth (s) Fig. 16 - Maximum On-State Energy Power Loss Characteristics 100 Instantaneous Gate Voltage (V) 10 Rectangular gate pulse a) Recommended load line for rated dI/dt: 20 V, 10 ; tr 1 s b) Recommended load line for 30 % rated dI/dt: 10 V, 10 tr 1 s (b) TJ = 125 C (1) PGM = 10 W, (2) PGM = 20 W, (3) PGM = 40 W, (4) PGM = 60 W, (a) tp = 20 ms tp = 10 ms tp = 5 ms tp = 3.3 ms TJ = 40 C TJ = 25 C 1 VGD IGD 0.1 0.001 0.01 (1) (2) (3) (4) Device: ST203C..C Series 0.1 1 Frequency limited by PG(AV) 10 100 Instantaneous Gate Current (A) Fig. 17 - Gate Characteristics Document Number: 94370 Revision: 30-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 7 ST203CPbF Series Vishay High Power Products Inverter Grade Thyristors (Hockey PUK Version), 370 A ORDERING INFORMATION TABLE Device code ST 1 1 2 3 4 5 6 7 8 9 20 2 - 3 3 C 4 12 5 C 6 H 7 H 8 1 9 10 P 11 Thyristor Essential part number 3 = Fast turn-off C = Ceramic PUK Voltage code x 100 = VRRM (see Voltage Ratings table) C = PUK case TO-200AB (A-PUK) Reapplied dV/dt code (for tq test condition) tq code 0 = Eyelet terminals dV/dt - tq combinations available dV/dt (V/s) 20 50 100 200 400 20 CK DK EK tq (s) 25 CJ DJ EJ FJ* 30 CH DH EH FH HH (gate and auxiliary cathode unsoldered leads) * Standard part number. All other types available only on request. 1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads) 2 = Eyelet terminals (gate and auxiliary cathode soldered leads) 3 = Fast-on terminals (gate and auxiliary cathode soldered leads) 10 - Critical dV/dt: None = 500 V/s (standard value) L = 1000 V/s (special selection) 11 - P = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95074 www.vishay.com 8 For technical questions, contact: ind-modules@vishay.com Document Number: 94370 Revision: 30-Apr-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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