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| ST183SPbF Series Vishay High Power Products Inverter Grade Thyristors (Stud Version), 195 A FEATURES * Center amplifying gate * High surge current capability * Low thermal impedance * High speed performance * Compression bonding TO-209AB (TO-93) RoHS COMPLIANT * Lead (Pb)-free * Designed and qualified for industrial level TYPICAL APPLICATIONS PRODUCT SUMMARY IT(AV) 195 A * Inverters * Choppers * Induction heating * All types of force-commutated converters MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) IT(RMS) 50 Hz ITSM 60 Hz 50 Hz 60 Hz VDRM/VRRM tq TJ TEST CONDITIONS VALUES 195 TC 85 306 4900 5130 120 110 400 to 800 15 to 20 - 40 to 125 V s C kA2s A UNITS A C I2 t ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 04 ST183S 08 800 900 VDRM/VRRM, MAXIMUM REPETITIVE PEAK VOLTAGE V 400 VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 500 40 IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA Document Number: 94369 Revision: 30-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 1 ST183SPbF Series Vishay High Power Products Inverter Grade Thyristors (Stud Version), 195 A CURRENT CARRYING CAPABILITY ITM 180 el 180 el ITM 100 s ITM FREQUENCY UNITS 50 Hz 400 Hz 1000 Hz 2500 Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current dI/dt Case temperature Equivalent values for RC circuit 570 560 500 340 50 VDRM 50 60 47 /0.22 370 360 300 190 900 940 925 760 50 VDRM - 610 630 610 490 7040 3200 1780 880 50 VDRM - 5220 2280 1200 560 V A/s 85 47/0.22 C /F A 85 60 47/0.22 85 60 ON-STATE CONDUCTION PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS 180 conduction, half sine wave DC at 74 C case temperature t = 10 ms Maximum peak, one half cycle, non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2 t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t VTM VT(TO)1 VT(TO)2 rt1 rt2 IH IL No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied VALUES 195 85 306 4900 5130 4120 Sinusoidal half wave, initial TJ = TJ maximum 4310 120 110 85 78 1200 1.80 1.40 1.45 0.67 0.58 600 1000 m V kA2s kA2s A UNITS A C t = 0.1 to 10 ms, no voltage reapplied ITM = 600 A, TJ = TJ maximum, tp = 10 ms sine wave pulse (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV)), TJ = TJ maximum (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV)), TJ = TJ maximum TJ = 25 C, IT > 30 A TJ = 25 C, VA = 12 V, Ra = 6 , IG = 1 A Maximum peak on-state voltage Low level value of threshold voltage High level value of threshold voltage Low level value of forward slope resistance High level value of forward slope resistance Maximum holding current Typical latching current mA www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com Document Number: 94369 Revision: 30-Apr-08 ST183SPbF Series Inverter Grade Thyristors (Stud Version), 195 A SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current Typical delay time minimum Maximum turn-off time maximum tq SYMBOL dI/dt td TEST CONDITIONS TJ = TJ maximum, VDRM = Rated VDRM ITM = 2 x dI/dt TJ = 25 C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 s Resistive load, gate pulse: 10 V, 5 source TJ = TJ maximum, ITM = 300 A, commutating dI/dt = 20 A/s VR = 50 V, tp = 500 s, dV/dt: 200 V/s VALUES 1000 1.1 15 20 s UNITS A/s Vishay High Power Products BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage Maximum peak reverse and off-state leakage current SYMBOL dV/dt IRRM, IDRM TEST CONDITIONS TJ = TJ maximum, linear to 80 % VDRM, higher value available on request TJ = TJ maximum, rated VDRM/VRRM applied VALUES 500 40 UNITS V/s mA TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage Maximum DC gate currrent required to trigger Maximum DC gate voltage required to trigger Maximum DC gate current not to trigger Maximum DC gate voltage not to trigger SYMBOL PGM PG(AV) IGM + VGM - VGM IGT VGT IGD VGD TJ = TJ maximum VA = 12 V, Ra = 6 TJ = TJ maximum, tp 5 ms TEST CONDITIONS TJ = TJ maximum, f = 50 Hz, d% = 50 VALUES 60 10 10 20 5 200 3 20 0.25 UNITS W A V mA V mA V TJ = TJ maximum, rated VDRM applied THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction operating temperature range Maximum storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, case to heatsink SYMBOL TJ TStg RthJC RthCS DC operation Mounting surface, smooth, flat and greased Non-lubricated threads Mounting torque, 10 % Lubricated threads Approximate weight Case style See dimensions - link at the end of datasheet TEST CONDITIONS VALUES - 40 to 125 - 40 to 150 0.105 0.04 31 (275) 24.5 (210) 280 UNITS C K/W N*m (lbf * in) g TO-209AB (TO-93) Document Number: 94369 Revision: 30-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 ST183SPbF Series Vishay High Power Products Inverter Grade Thyristors (Stud Version), 195 A RthJC CONDUCTION CONDUCTION ANGLE 180 120 90 60 30 SINUSOIDAL CONDUCTION 0.016 0.019 0.025 0.036 0.060 RECTANGULAR CONDUCTION 0.012 0.020 0.027 0.037 0.060 TJ = TJ maximum K/W TEST CONDITIONS UNITS Note * The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC 130 ST183S Series RthJC (DC) = 0.105 K/W 130 120 110 O Maximum Allowable Case Temperature (C) 110 O Conduction angle Maximum Allowable Case Temperature (C) 120 ST183S Series RthJC (DC) = 0.105 K/W 100 90 80 70 30 Conduction period 100 60 90 120 0 50 100 150 200 180 DC 250 300 350 90 30 C 80 0 20 40 60 60 C 90 C 120 C 180 C 80 100 120 140 160 180 200 Average On-State Current (A) Fig. 1 - Current Ratings Characteristics Average On-State Current (A) Fig. 2 - Current Ratings Characteristics 350 350 Maximum Average On-State Power Loss (W) Maximum Average On-State Power Loss (W) 300 250 200 180 120 90 60 30 0. 1 R th 300 250 200 150 100 50 0 0. 16 0.2 K/W K/ W K/ W SA = 0. 08 K/ W 0.3 R - RMS limit 150 100 50 0 0 20 40 60 80 100 120 140 160 180 200 O Conduction angle ST183S Series TJ = 125 C K/W 0.4 K/W 0.5 K/W 0.8 K /W 1.2 K/W 25 50 75 100 125 Average On-State Current (A) Maximum Allowable Ambient Temperature (C) Fig. 3 - On-State Power Loss Characteristics www.vishay.com 4 For technical questions, contact: ind-modules@vishay.com Document Number: 94369 Revision: 30-Apr-08 ST183SPbF Series Inverter Grade Thyristors (Stud Version), 195 A 500 450 DC 180 120 90 60 30 500 Vishay High Power Products Maximum Average On-State Power Loss (W) 450 400 350 300 250 200 150 100 50 0 25 Maximum Average On-State Power Loss (W) 400 350 300 250 200 150 100 50 0 0 R th SA = 0.1 0. 8 RMS limit O Conduction period ST183S Series TJ = 125 C 50 100 150 200 250 300 350 W 0.1 6 0.2 K/W K/W 0.3 K/W 0.4 K 0.5 K /W /W 0.8 K/W 1.2 K/W K/ K/ W - R 50 75 100 125 Average On-State Current (A) Maximum Allowable Ambient Temperature (C) Fig. 4 - On-State Power Loss Characteristics At any rated load condition and with rated VRRM applied following surge Instantaneous On-State Current (A) 4500 10 000 ST183S Series Peak Half Sine Wave On-State Current (A) 4000 Initial TJ = 125 C at 60 Hz 0.0083 s at 50 Hz 0.0100 s TJ = 125 C 1000 TJ = 25 C 3500 3000 2500 ST183S Series 2000 1 10 100 100 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Instantaneous On-State Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics 5000 1 4000 3500 3000 2500 ST183S Series 2000 0.01 0.1 Initial TJ = 125 C No voltage reapplied Rated VRRM reapplied ZthJC - Transient Thermal Impedance (K/W) 4500 Maximum non-repetitive surge current versus pulse train duration. Control of conduction may not be maintained Peak Half Sine Wave On-State Current (A) Steady state value RthJC = 0.105 K/W (DC operation) 0.1 0.01 ST183S Series 1 0.001 0.001 0.01 0.1 1 10 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics Document Number: 94369 Revision: 30-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 ST183SPbF Series Vishay High Power Products Inverter Grade Thyristors (Stud Version), 195 A 250 ST183S Series TJ = 125 C 160 Qrr - Maximum Reverse Recovery Charge (C) 200 = A I TM 00 =3 I TM 0A = 20 I TM I TM A = 100 0 50 Irr - Maximum Reverse Recovery Current (A) A 140 120 100 80 60 40 20 0 150 100 ITM = 50 A I TM A 00 = 5 00 A I TM = 3 A I TM 200 = A I TM = 100 I TM 0A =5 50 ST183S Series TJ = 125 C 0 0 20 40 60 80 100 0 20 40 60 80 100 dI/dt - Rate of Fall of On-State Current (A/s) Fig. 9 - Reverse Recovered Charge Characteristics dI/dt - Rate of Fall of On-State Current (A/s) Fig. 10 - Reverse Recovery Current Characteristics 10 000 10 000 Peak On-State Current (A) 1000 1500 400 500 200 100 50 Hz Peak On-State Current (A) Snubber circuit Rs = 47 Cs = 0.22 F VD = 80 % VDRM Snubber circuit Rs = 47 Cs = 0.22 F VD = 80 % VDRM 1000 500 1500 1000 2500 3000 5000 1000 400 100 50 Hz 2500 3000 5000 200 tp ST183S Series Sinusoidal pulse TC = 60 C 1000 10 000 tp ST183S Series Sinusoidal pulse TC = 85 C 1000 10 000 100 10 100 100 10 100 Pulse Basewidth (s) Fig. 11 - Frequency Characteristics Pulse Basewidth (s) 10 000 10 000 200 50 Hz 500 3000 1500 400 100 Peak On-State Current (A) Peak On-State Current (A) Snubber circuit Rs = 47 Cs = 0.22 F VD = 80 % VDRM 1000 Snubber circuit Rs = 47 Cs = 0.22 F VD = 80 % VDRM 1000 2500 1500 3000 1000 400 500 100 200 50 Hz 1000 2500 5000 100 10 000 100 5000 tp ST183S Series Trapezoidal pulse TC = 60 C dI/dt = 50 A/s 1000 10 000 10 000 tp ST183S Series Trapezoidal pulse TC = 85 C dI/dt = 50 A/s 1000 10 000 10 10 100 10 10 100 Pulse Basewidth (s) Fig. 12 - Frequency Characteristics Pulse Basewidth (s) www.vishay.com 6 For technical questions, contact: ind-modules@vishay.com Document Number: 94369 Revision: 30-Apr-08 ST183SPbF Series Inverter Grade Thyristors (Stud Version), 195 A 10 000 Snubber circuit Rs = 47 Cs = 0.22 F VD = 80 % VDRM 10 000 Vishay High Power Products Peak On-State Current (A) 400 200 50 Hz 100 Peak On-State Current (A) Snubber circuit Rs = 47 Cs = 0.22 F VD = 80 % VDRM 50 Hz 1000 2500 3000 5000 1000 500 1500 1000 1000 2500 3000 1500 500 400 200 100 100 10 000 100 5000 tp ST183S Series Trapezoidal pulse TC = 60 C dI/dt = 100 A/s 1000 10 000 10 000 tp ST183S Series Trapezoidal pulse TC = 85 C dI/dt = 100 A/s 1000 10 000 10 10 100 10 10 100 Pulse Basewidth (s) Fig. 13 - Frequency Characteristics 100 000 100 000 Pulse Basewidth (s) Peak On-State Current (A) Peak On-State Current (A) tp ST183S Series Rectangular pulse dI/dt = 50 A/s 20 joules per pulse 10 000 1 2 20 joules per pulse 5 10 10 000 1000 0.5 0.3 0.2 0.1 1000 5 0.3 0.2 0.5 1 2 10 100 tp ST183S Series Sinusoidal pulse 100 0.1 10 10 100 1000 10 000 10 10 100 1000 10 000 Pulse Basewidth (s) Pulse Basewidth (s) Fig. 14 - Maximum On-State Energy Power Loss Characteristics 100 Instantaneous Gate Voltage (V) 10 Rectangular gate pulse a) Recommended load line for rated dI/dt: 20 V, 10 ; tr 1 s b) Recommended load line for 30 % rated dI/dt: 10 V, 10 tr 1 s TJ = 125 C (1) PGM = 10 W, (2) PGM = 20 W, (3) PGM = 40 W, (4) PGM = 60 W, (a) (b) TJ = 40 C TJ = 25 C tp = 20 ms tp = 10 ms tp = 5 ms tp = 3.3 ms 1 VGD IGD 0.1 0.001 0.01 (1) (2) (3) (4) Device: ST183S Series 0.1 1 Frequency limited by PG(AV) 10 100 Instantaneous Gate Current (A) Fig. 15 - Gate Characteristics Document Number: 94369 Revision: 30-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 7 ST183SPbF Series Vishay High Power Products Inverter Grade Thyristors (Stud Version), 195 A ORDERING INFORMATION TABLE Device code ST 1 1 2 3 4 5 6 7 8 9 18 2 - 3 3 S 4 08 5 P 6 F 7 K 8 0 9 PbF 10 Thyristor Essential part number 3 = Fast turn-off S = Compression bonding stud Voltage code x 100 = VRRM (see Voltage Ratings table) P = Stud base 3/4" 16UNF-2A Reapplied dV/dt code (for tq test condition) dV/dt - tq combinations available dV/dt (V/s) 200 tq code FL tq (s) 15 0 = Eyelet terminals 20 FK (gate and auxiliary cathode leads) 1 = Fast-on terminals (gate and auxiliary cathode leads) 10 - Lead (Pb)-free Note: For metric device M16 x 1.5 contact factory LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95077 www.vishay.com 8 For technical questions, contact: ind-modules@vishay.com Document Number: 94369 Revision: 30-Apr-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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