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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2660 2SC2660A DESCRIPTION With TO-220 package Complement to type 2SA1133/1133A High VCEO Large PC APPLICATIONS Power amplifier applications TV vertical deflection applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO PARAMETER VCEO INC Collector-base voltage E SEM ANG H 2SC2660 2SC2660A OND IC CONDITIONS TOR UC VALUE 200 150 V 180 UNIT V Open emitter Collector-emitter voltage Open base VEBO IC ICM PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature Open collector 6 2 3 V A A W ae ae TC=25ae 30 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter on voltage 2SC2660 V(BR)CEO Collector-emitter breakdown voltage 2SC2660A V(BR)CBO V(BR)EBO ICBO IEBO hFE-1 hFE-2 Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current IC=0.5mA ;IE=0 IE=0.5mA ;IC=0 VCB=200V;IE=0 VEB=4V; IC=0 IC=5mA ;IB=0 CONDITIONS IC=0.5A ;IB=50m A IC=0.4A ; VCE=10V 2SC2660 2SC2660A SYMBOL VCEsat VBE MIN TYP. MAX 1.0 1.0 UNIT V V 150 V 180 200 6 50 |I |I V V A A DC current gain DC current gain P hFE-1 classifications Q 60-140 CHA IN 100-240 E SEM NG IC=0.15A ; VCE=10V IC=0.4A ; VCE=10V OND IC 60 TOR UC 50 240 50 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2660 2SC2660A CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.10 mm) 3 |
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