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Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1019 DESCRIPTION With TO-220Fa package Low saturation voltage Complement to type 2SD1412 APPLICATIONS High current switching applications Power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage INCH Base current Collector -emitter voltage Emitter-base voltage ANG EMIC ES Open emitter Open base Open collector CONDITIONS OND TOR UC VALUE -70 -50 -5 -7 -1 UNIT V V V A A Collector current Ta=25ae PC Collector power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 2 W 30 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-50mA; IB=0 IC=-4A ;IB=-0.4A IC=-4A ;IB=-0.4A VCB=-70V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-1V IC=-4A ; VCE=-1V IC=-1A ; VCE=-4V IE=0 ; VCB=-10V;f=1MHz 70 30 MIN -50 2SB1019 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB TYP. MAX UNIT V -0.2 -0.9 -0.4 -1.2 -30 -50 240 |I |I V V A A Output capacitance Switching times ton ts tf Turn-on time Storage time Fall time HAN INC Y 120-240 SEM GE OND IC TOR UC 250 0.2 2.5 0.5 10 MHz pF |I |I |I s s s RL=10| IB1=-IB2=-0.3A VCC=-30V hFE-1 Classifications O 70-140 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1019 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance: A 0.15 mm) 3 |
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