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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6106 2N6108 2N6110 DESCRIPTION With TO-220 package With short pin APPLICATIONS Power amplifier and switching circuits applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25ae ) SYMBOL PARAMETER CONDITIONS VCBO Collector-base voltage CHA 2N6106 2N6108 Open emitter VCEO Collector-emitter voltage VEBO IC ICM IB PT Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature IN NG S 2N6106 2N6108 2N6110 2N6110 Open base CON EMI TOR DUC VALUE -40 -60 -80 -30 -50 -70 -5 -7 -10 -3 UNIT V V Open collector V A A A W ae ae TC=25ae 40 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 3.125 UNIT ae /W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2N6106 VCEO(SUS) Collector-emitter sustaining voltage 2N6108 2N6110 VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage 2N6106 ICEO Collector cut-off current 2N6108 2N6110 2N6106 2N6108 IC=-7A;IB=-3A IC=-7A ; VCE=-4V VCE=-20V; IB=0 VCE=-40V; IB=0 VCE=-60V; IB=0 IC=-0.1A ;IB=0 2N6106 2N6108 2N6110 SYMBOL CONDITIONS MIN -30 -50 -70 TYP. MAX UNIT V -3.5 -3.0 V V -1.0 mA ICEX Collector cut-off current VCE=-40V; VBE=1.5V VCE=-30V; BE=1.5V,TC=125ae VCE=-60V; VBE=1.5V VCE=-50V; BE=1.5V,TC=125ae VCE=-80V; VBE=1.5V VCE=-70V; BE=1.5V,TC=125ae VEB=-5V; IC=0 IEBO Emitter cut-off current INC NG S HA 2N6106 2N6108 2N6110 2N6110 CON EMI TOR DUC -0.1 -2.0 -0.1 -2.0 -1.0 -0.1 -2.0 mA mA IC=-2A ; VCE=-4V IC=-2.5A ; VCE=-4V 30 150 hFE-1 DC current gain IC=-3A ; VCE=-4V IC=-7A ; VCE=-4V IE=0 ; VCB=-10V;f=1MHz IC=-0.5A ; VCE=-4V;f=1MHz 10 2.3 250 pF MHz hFE-2 COB fT DC current gain Output capacitance Transition frequency 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N6106 2N6108 2N6110 NG S HA INC Fig.2 Outline dimensions(unindicated tolerance:A CON EMI TOR DUC 0.10 mm) 3 |
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