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| Advanced Technical Information Dual Power MOSFET Module Common-Source connected N-Channel Enhancement Mode VMK 165-007T VDSS = 70 V ID25 = 165 A RDS(on) = 7 mW 45 1 2 3 67 Symbol VDSS VDGR VGS VGSM ID25 ID IDM Ptot TJ TJM Tstg VISOL Md Weight Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 6.8 kW Continuous Transient Maximum Ratings 70 70 20 30 165 104 660 390 -40 ... +150 150 -40 ... +125 V V V V A A A W C C C V~ V~ TO-240 AA E 72873 1 2 3 6 7 4 5 TC = 25C TC = 100C TC = 25C, tp = 10 s, pulse width limited by TJM TC = 25C, TJ = 150C 1, 3 = Drain, 5, 6 = Gate, 2 = Common Source 4, 7 = Kelvin Source 50/60 Hz IISOL 1 mA t = 1 min t=1s 3000 3600 Features * * Mounting torque(M5 or 10-32 UNF) Terminal connection torque (M5) Typical including screws 2.5-4.0/22-35 Nm/lb.in. 2.5-4.0/22-35 Nm/lb.in. 90 g * * * * Symbol Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 70 2 4 V V * * Two MOSFET with common source International standard package JEDEC TO-240 AA Direct copper bonded Al2O3 ceramic base plate Isolation voltage 3000 V~ Low RDS(on) HDMOSTM process Low package inductance for high speed switching Kelvin source contact Keyed twin plugs VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1 mA VDS = VGS, ID = 8 mA VGS = 20 V DC, VDS = 0 VDS = VDSS, VGS = 0 V, TJ = 25C VDS = 0.8 * VDSS, VGS = 0 V, TJ = 125C VGS = 10 V, ID = 0.5 * ID25 Pulse test, t 300 s, duty cycle d 2 % Applications * * 500 nA 200 A 1 mA 6 7 mW * * Push-pull inverters Switched-mode and resonant-mode power supplies Uninterruptible power supplies (UPS) AC static switches Data per MOSFET unless otherwise stated. Advantages * * * * Easy to mount with two screws Space and weight savings High power density Low losses (c) 2000 IXYS All rights reserved 1-2 023 VMK 165-007T Symbol Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 60 80 8.8 4.0 2.4 120 280 390 110 480 60 240 0.2 12.7 9.6 50 S nF nF nF ns ns ns ns nC nC nC 0.32 K/W K/W mm mm m/s2 Dimensions in mm (1 mm = 0.0394") TO-240 AA Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd RthJC RthCH dS dA a VDS = 10 V; ID = 0.5 * ID25 pulsed VGS = 0 V, VDS = 25 V, f = 1 MHz VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 W (External), resistive load VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 with heat transfer paste Creepage distance on surface Strike distance through air Max. allowable acceleration Source-Drain Diode Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 165 660 1.5 150 A A V ns Symbol IS ISM VSD trr Conditions VGS = 0 V Repetitive; pulse width limited by TJM IF = IS; VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 50 A, -di/dt = 200 A/s, VDS = 25 V, VGS = 0 V (c) 2000 IXYS All rights reserved 2-2 |
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