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| AP85U03GH RoHS-compliant Product Advanced Power Electronics Corp. Low On-resistance Simple Drive Requirement Fast Switching Characteristic G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 5.5m 75A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. G D S TO-252(H) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 Rating 30 +20 75 56 220 60 0.48 4 Units V V A A A W W/ mJ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 57.6 -55 to 175 -55 to 175 Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 5 Value 2.5 62.5 110 Units /W /W /W Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice 1 200807174 AP85U03GH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=40A VGS=4.5V, ID=30A Min. 30 1 - Typ. 27.5 29 6.4 19 10 84 27 83 395 390 1.2 Max. Units 5.5 12 3 1 +100 46 1.8 V m m V S uA nA nC nC nC ns ns ns ns pF pF pF VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 VDS=VGS, ID=250uA VDS=10V, ID=30A VDS=30V, VGS=0V VGS=+20V ID=30A VDS=24V VGS=4.5V VDS=15V ID=30A RG=3.3,VGS=10V RD=0.5 VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 2400 3840 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions IS=30A, VGS=0V IS=10A, VGS=0V, dI/dt=100A/s Min. - Typ. 33 30 Max. Units 1.2 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature 2.Pulse test 3.Package limitation current is 75A . 4.Starting Tj=25oC , VDD=20V , L=0.1mH , RG=25 , IAS=24A. 5.Surface mounted on 1 in2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP85U03GH 200 100 T C =25 o C 160 10V 7.0 V 80 T C =175 o C ID , Drain Current (A) 5.0V 120 ID , Drain Current (A) 10V 7 .0V 5.0V 4.5 V 60 4.5 V 80 40 V G =3.0V 40 20 V G = 3.0 V 0 0.0 2.0 4.0 6.0 8.0 0 0.0 2.0 4.0 6.0 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 14 2.0 I D =30A 12 T C =25 o C 1.6 I D =40A V G =10V RDS(ON) (m) Normalized RDS(ON) 10 8 1.2 6 0.8 4 2 2 4 6 8 10 0.4 -50 0 50 100 150 200 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 50 40 1.2 IS(A) 30 T j =175 o C T j =25 C o Normalized VGS(th) (V) 1.6 0.8 20 0.4 10 0 0 0.4 0.8 1.2 0.0 -50 0 50 100 150 200 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP85U03GH 16 10000 f=1.0MHz I D =30A VGS , Gate to Source Voltage (V) 12 C (pF) V DS =16V V DS =20V V DS =24V 8 C iss 1000 C oss C rss 4 0 0 15 30 45 60 100 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS ,Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 1 Duty factor = 0.5 100 Normalized Thermal Response (Rthjc) 0.2 100us ID (A) 10 0.1 1 1ms 10ms 100ms DC T C =25 o C Single Pulse 0.1 0.05 PDM t 0.02 T Duty Factor = t/T Peak Tj = PDM x Rthjc + T C 0.01 Single Pulse 0 0.1 1 10 100 0.01 0.00001 0.0001 0.001 0.01 0.1 1 V DS ,Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-252 D D1 SYMBOLS Millimeters MIN NOM MAX A2 A3 B1 D D1 E3 1.80 0.40 0.40 6.00 4.80 3.50 2.20 0.5 5.10 0.50 -0.35 2.30 0.50 0.70 6.50 5.35 4.00 2.63 0.85 5.70 1.10 2.30 0.50 2.80 0.60 1.00 7.00 5.90 4.50 3.05 1.20 6.30 1.80 -0.65 E2 E3 E1 F F1 E1 E2 e C B1 F1 F 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. e e A2 R : 0.127~0.381 A3 (0.1mm C Part Marking Information & Packing : TO-252 Part Number Package Code meet Rohs requirement 85U03GH LOGO YWWSSS Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence 5 |
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