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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2527 DESCRIPTION With TO-220C package Complement to type 2SA1077 Fast switching speed Excellent safe operating area APPLICATIONS High frequency power amplifiers Audio power amplifiers Switching regulators DC-DC converters PINNING PIN 1 2 3 Base Collector;connected to mounting base DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg Emitter PARAMETER CHA IN Collector current E SEM NG Open emitter Open base Open collector OND IC TOR UC VALUE 120 120 7 10 UNIT V V V A W ae ae CONDITIONS Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector power dissipation Junction temperature Storage temperature TC=25ae 60 150 -65~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=1mA ; RBE= IC=50|I IE=50|I A ; IE=0 A ; IC=0 MIN 120 120 7 2SC2527 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO ICEO IEBO hFE-1 hFE -2 fT COB TYP. MAX UNIT V V V IC=5A; IB=0.5A IC=5 A ; VCE=5V VCB=120V ;IE=0 VCE=120V; IB=0 VEB=7V ;IC=0 IC=1 A ; VCE=5V IC=5 A ; VCE=5V 1.8 1.7 50 1 |I V V A mA |I A DC current gain CHA IN Transition frequency Output capacitance Rise time Storage time Fall time E SEM NG OND IC TOR UC 50 60 200 40 80 180 IC=1 A ; VCE=10V IE=0 ; VCB=10V; f=1MHz MHz pF Switching times tr ts tf 0.3 IC=7.5 A; RL=4| IB1=-IB2=0.75A 1.3 0.2 |I |I |I s s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2527 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm) 3 |
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