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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2307 DESCRIPTION With TO-3PN package High voltage ,high speed APPLICATIONS For power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg Collector-base voltage PARAMETER CHA IN Collector-emitter voltage E SEM NG Open base TC=25ae Open emitter OND IC CONDITIONS TOR UC MAX 500 400 7 12 100 150 -55~150 UNIT V V V A W ae ae Emitter-base voltage Open collector Collector current (DC) Collector power dissipation Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=25mA ;IB=0 IC=1mA ;IE=0 IE=1mA ;IC=0 IC=7A; IB=1.4A IC=7A; IB=1.4A VCB=500V; IE=0 VEB=7V; IC=0 IC=7A ; VCE=4V 10 MIN 400 500 7 2SC2307 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT TYP. MAX UNIT V V V 0.5 1.3 100 100 |I |I V V A A Transition frequency CHA IN E SEM NG IC=1A ; VCE=12V OND IC TOR UC 18 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2307 CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 |
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