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| New Product SS10P3C & SS10P4C Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers eSMP TM Series K FEATURES * Very low profile - typical height of 1.1 mm * Ideal for automated placement * Low forward voltage drop, low power losses * High efficiency 1 * Low thermal resistance * Meets MSL level 1, per J-STD-020 * Solder dip 260 C, 40 s * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC * Halogen-free 2 TO-277A (SMPC) K Cathode Anode 1 Anode 2 PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM EAS VF at IF = 5 A TJ max. 2 x 5.0 A 30 V, 40 V 200 A 20 mJ 0.37 V 150 C TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, dc-to-dc converters, and polarity protection applications. MECHANICAL DATA Case: TO-277A (SMPC) Molding compound meets UL 94V-0 flammability rating. Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, high reliability/ automotive grade (AEC-Q101 qualified) Base P/N-M3 - halogen-free and RoHS compliant, commercial grade Base P/NHM3 - halogen-free and RoHS compliant, high reliability/automotive grade (AEC-Q101 qualified) Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 and M3 suffix meets JESD 201 class 1A whisker test, HE3 and HM3 suffix meets JESD 201 class 2 whisker test MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER Device marking code Maximum repetitive peak reverse voltage Maximum average forward rectified current (Fig. 1) total device per diode VRRM IF(AV) IFSM EAS TJ, TSTG SYMBOL SS10P3C S103C 30 10 5.0 200 20 - 55 to + 150 SS10P4C S104C 40 V A A mJ C UNIT Peak forward surge current 10 ms single half sine-wave superimposed on rated load per diode Non-repetitive avalanche energy at 25 C, IAS = 2 A per diode Operating junction and storage temperature range Document Number: 89035 Revision: 30-Jul-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 New Product SS10P3C & SS10P4C Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 2.5 A IF = 5.0 A IF = 2.5 A IF = 5.0 A rated VR 4.0 V, 1 MHz TA = 25 C VF TA = 125 C TA = 25 C TA = 125 C IR CJ SYMBOL TYP. 0.40 0.45 0.29 0.37 56 28 430 MAX. 0.53 V 0.44 550 45 A mA pF UNIT Instantaneous forward voltage per diode (1) Reverse current per diode (2) Typical junction capacitance per diode Notes: (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER Typical thermal resistance per diode Note: (1) Units mounted on recommended P.C.B. 1 oz. pad layout SYMBOL RJA RJL (1) SS10P3C 60 3 SS10P4C UNIT C/W ORDERING INFORMATION (Example) PREFERRED P/N SS10P4C-E3/86A SS10P4C-E3/87A SS10P4CHE3/86A (1) SS10P4CHE3/87A (1) SS10P4C-M3/86A SS10P4C-M3/87A SS10P4CHM3/86A (1) SS10P4CHM3/87A (1) Note: (1) High reliability/automotive grade (AEC-Q101 qualified) UNIT WEIGHT (g) 0.10 0.10 0.10 0.10 0.10 0.10 0.10 0.10 PREFERRED PACKAGE CODE 86A 87A 86A 87A 86A 87A 86A 87A BASE QUANTITY 1500 6500 1500 6500 1500 6500 1500 6500 DELIVERY MODE 7" diameter plastic tape and reel 13" diameter plastic tape and reel 7" diameter plastic tape and reel 13" diameter plastic tape and reel 7" diameter plastic tape and reel 13" diameter plastic tape and reel 7" diameter plastic tape and reel 13" diameter plastic tape and reel www.vishay.com 2 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 89035 Revision: 30-Jul-08 New Product SS10P3C & SS10P4C Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 12 Resistive or Inductive Load 1000 Instantaneous Reverse Current (mA) Average Forward Current (A) 10 100 10 TA = 150 C 8 TA = 125 C 1 6 4 TL measured at the Cathode Band Terminal 0.1 TA = 25 C 0.01 2 0 0 25 50 75 100 125 150 175 0.001 10 20 30 40 50 60 70 80 90 100 Lead Temperature (C) Percent of Rated Peak Reverse Voltage (%) Figure 1. Maximum Forward Current Derating Curve Figure 4. Typical Reverse Leakage Characteristics Per Diode 2.5 D = 0.3 D = 0.2 2.0 D = 0.1 D = 1.0 1.5 D = 0.5 D = 0.8 10 000 TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p Junction Capacitance (pF) Average Power Loss (W) 1000 1.0 T 0.5 D = tp/T 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 tp 100 0.1 1 10 100 Average Forward Current (A) Reverse Voltage (V) Figure 2. Forward Power Loss Characteristics Per Diode Figure 5. Typical Junction Capacitance Per Diode 100 100 TA = 150 C 10 TA = 125 C Transient Thermal Impedance (C/W) Instantaneous Forward Current (A) 1 TA = 25 C 10 0.1 Junction to Ambient 1 0.01 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Figure 3. Typical Instantaneous Forward Characteristics Per Diode Figure 6. Typical Transient Thermal Impedance Per Diode Document Number: 89035 Revision: 30-Jul-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 New Product SS10P3C & SS10P4C Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-277A (SMPC) 0.187 (4.75) 0.175 (4.45) K 0.016 (0.40) 0.006 (0.15) 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.238 (6.05) 0.026 (0.65) NOM. 2 1 0.171 (4.35) 0.167 (4.25) 0.146 (3.70) 0.134 (3.40) 0.087 (2.20) 0.075 (1.90) 0.047 (1.20) 0.039 (1.00) Mounting Pad Layout 0.189 MIN. (4.80) 0.189 (4.80) 0.173 (4.40) 0.155 (3.94) NOM. 0.030 (0.75) NOM. 0.268 (6.80) 0.186 MIN. (4.72) 0.049 (1.24) 0.037 (0.94) 0.084 (2.13) NOM. 0.053 (1.35) 0.041 (1.05) 0.041 (1.04) 0.050 MIN. (1.27) 0.055 MIN. (1.40) Conform to JEDEC TO-277A www.vishay.com 4 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 89035 Revision: 30-Jul-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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