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| FDP150N10 N-Channel PowerTrench(R) MOSFET July 2008 FDP150N10 100V, 57A, 15m Features N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. (R) tm * RDS(on) = 12m ( Typ.) @ VGS = 10V, ID = 49A * Fast switching speed * Low gate charge * High performance trench technology for extremely low RDS(on) * High power and current handling capability * RoHS compliant Application * DC to DC convertors / Synchronous Rectification D G GDS TO-220 FDP Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS VGSS ID IDM EAS dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 3) Ratings 100 20 57 40 228 132 7.5 110 0.88 -55 to +150 300 Units V V A A A mJ V/ns W W/oC o o Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds C C Thermal Characteristics Symbol RJC RCS RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Typ. Thermal Resistance, Junction to Ambient Ratings 1.13 0.5 62.5 o Units C/W (c)2008 Fairchild Semiconductor Corporation FDP150N10 Rev. A 1 www.fairchildsemi.com FDP150N10 N-Channel PowerTrench(R) MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Device Marking FDP150N10 Device FDP150N10 Package TO-220 Reel Size Tape Width Quantity 50 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250A, VGS = 0V, TC= 25oC ID = 250A, Referenced to 25oC VDS = 100V, VGS = 0V VDS = 100V, VGS = 0V, TC = 150oC VGS = 20V, VDS = 0V 100 0.1 1 500 100 V V/oC A nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A VGS = 10V, ID = 49A VDS = 20V, ID = 49A (Note 4) 2.5 - 12 156 4.5 15 - V m S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, VGS = 0V f = 1MHz 3580 340 140 4760 450 210 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg(tot) Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain "Miller" Charge VDS = 80V, ID = 49A VGS = 10V (Note 4, 5) VDD = 50V, ID = 49A VGS = 10V, RGEN = 25 (Note 4, 5) 47 164 86 83 53 19 15 104 338 182 176 69 - ns ns ns ns nC nC nC - Drain-Source Diode Characteristics IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 49A VGS = 0V, ISD = 49A dIF/dt = 100A/s (Note 4) - 41 70 57 228 1.3 - A A V ns nC Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 0.11mH, IAS = 49A, VDD = 50V, RG = 25, Starting TJ = 25C 3: ISD 49A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4: Pulse Test: Pulse width 300s, Duty Cycle 2% 5: Essentially Independent of Operating Temperature Typical Characteristics FDP150N10 Rev. A 2 www.fairchildsemi.com FDP150N10 N-Channel PowerTrench(R) MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 500 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Figure 2. Transfer Characteristics 1000 *Notes: 1. VDS = 20V 2. 250s Pulse Test ID,Drain Current[A] 100 ID,Drain Current[A] 100 150 C o 10 *Notes: 1. 250s Pulse Test 2. TC = 25 C o 10 25 C o -55 C o 2 0.02 0.1 1 VDS,Drain-Source Voltage[V] 10 1 3 4 5 6 7 VGS,Gate-Source Voltage[V] 8 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 30 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 500 RDS(ON) [m], Drain-Source On-Resistance IS, Reverse Drain Current [A] 25 150 C o 100 20 VGS = 10V 25 C o 15 VGS = 20V 10 *Notes: 1. VGS = 0V 2. 250s Pulse Test 10 *Note: TC = 25 C o 5 0 100 200 ID, Drain Current [A] 300 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, Body Diode Forward Voltage [V] 1.6 Figure 5. Capacitance Characteristics 5000 Ciss *Note: 1. VGS = 0V 2. f = 1MHz Figure 6. Gate Charge Characteristics 10 VGS, Gate-Source Voltage [V] VDS = 25V VDS = 50V VDS = 80V 4000 Capacitances [pF] 8 3000 Coss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 6 2000 Crss 4 1000 2 *Note: ID = 49A 0 0.1 1 10 VDS, Drain-Source Voltage [V] 30 0 0 10 20 30 40 50 Qg, Total Gate Charge [nC] 60 FDP150N10 Rev. A 3 www.fairchildsemi.com FDP150N10 N-Channel PowerTrench(R) MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.15 BVDSS, [Normalized] Drain-Source Breakdown Voltage RDS(on), [Normalized] Drain-Source On-Resistance 2.0 Figure 8. On-Resistance Variation vs. Temperature 2.4 1.10 1.6 1.05 1.2 1.00 *Notes: 1. VGS = 0V 2. ID = 250uA 0.8 0.95 *Notes: 1. VGS = 10V 2. ID = 49A 0.90 -100 0.4 -100 -50 0 50 100 o 150 TJ, Junction Temperature [ C] 200 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 9. Maximum Safe Operating Area 500 Figure 10. Maximum Drain Current vs. Case Temperature 70 100 ID, Drain Current [A] 100s 1ms 10ms DC 10s 60 ID, Drain Current [A] 200 10 50 40 30 20 10 0 25 Operation in This Area is Limited by R DS(on) 1 *Notes: 0.1 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 0.01 1 10 100 VDS, Drain-Source Voltage [V] 50 75 100 o 125 TC, Case Temperature [ C] 150 Figure 11. Transient Thermal Response Curve 2 Thermal Response [ZJC] 1 0.5 0.2 PDM 0.1 0.1 0.05 t1 *Notes: 0.02 0.01 Single pulse t2 o 1. ZJC(t) = 1.13 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t) 0.01 -5 10 10 -4 10 10 10 Rectangular Pulse Duration [sec] -3 -2 -1 1 10 FDP150N10 Rev. A 4 www.fairchildsemi.com FDP150N10 N-Channel PowerTrench(R) MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP150N10 Rev. A 5 www.fairchildsemi.com FDP150N10 N-Channel PowerTrench(R) MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG Same Type as DUT VDD VGS * dv/dt controlled by RG * ISD controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop FDP150N10 Rev. A 6 www.fairchildsemi.com FDP150N10 N-Channel PowerTrench(R) MOSFET Mechanical Dimensions TO-220 Dimensions in Millimeters FDP150N10 Rev. A 7 www.fairchildsemi.com FDP150N10 N-Channel PowerTrench(R) MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM * TM (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * tm FPSTM F-PFSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) tm PDP-SPMTM Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM Saving our world 1mW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SuperMOSTM (R) The Power Franchise(R) tm TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production FDP150N10 Rev. A 8 www.fairchildsemi.com |
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