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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU2522A DESCRIPTION With TO-3PN package High voltage High speed switching APPLICATIONS For use in horizontal deflection circuits of high resolution monitors. PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO IC ICM IB IBM Ptot Tj Tstg PARAMETER CONDITIONS Open emitter Collector-base voltage HAN INC Collector-emitter voltage Collector current (DC) Collector current-peak Base current (DC) Base current-peak Total power dissipation Junction temperature Storage temperature SEM GE Open base OND IC TOR UC VALUE 1500 800 10 25 6 9 UNIT V V A A A A W ae ae TC=25ae 125 150 -65~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN BU2522A SYMBOL TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 800 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7.5 13.5 V VCEsat Collector-emitter saturation voltage IC=6A ;IB=1.76A 5.0 V VBEsat Base-emitter saturation voltage IC=6A ;IB=1.76A VCE=BVCES; VBE=0 Tj=125ae VEB=7.5V; IC=0 1.3 0.25 2.0 0.25 V ICES Collector cut-off current mA IEBO Emitter cut-off current mA hFE-1 DC current gain hFE-2 DC current gain ANG CH IC=1A ; VCE=5V 8 IC=6A ; VCE=5V CC Collector capacitance IN SEM E VCB=10V;IE=0;f=1.0MHz OND IC 5 TOR UC 7 8 115 pF 10 21 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU2522A SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.10 mm) 3 |
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