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| SMD Type MOS Field Effect Transistor 2SK2112 SOT-89 IC MOSFET Unit: mm 1.50 +0.1 -0.1 Features Low on-resistance RDS(on)=1.2 MAX.@VGS=4.0V,ID=0.5A High switching speed 4.50 +0.1 -0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 1 +0.1 0.48-0.1 2 3 +0.1 0.80-0.1 +0.1 0.53-0.1 +0.1 0.44-0.1 2.60 +0.1 -0.1 +0.1 4.00-0.1 +0.1 3.00-0.1 0.40 1. Base 1. Source 2. Collector 2. Drain 3. Emiitter 3. Gate +0.1 -0.1 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation * Symbol VDSS VGSS ID Idp PD Tch Tstg Rating 100 20 1.0 2.0 2.0 150 -55 to +150 Unit V V A A W Channel temperature Storage temperature * 16 cm2X0.7mm,ceramic substrate used Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate threshold voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol IDSS IGSS VGS(th) Yfs RDS(on) Ciss Coss Crss td(on) tr td(off) tf ID=0.5A,VGS(on)=10V,RL=50 ,RG=10 ,VDD=25V VDS=10V,VGS=0,f=1MHZ Testconditons VDS=100V,VGS=0 VGS= 20V,VDS=0 VDS=10V,ID=1mA VDS=10V,ID=0.5A VGS=4.0V,ID=0.5A VGS=10V,ID=0.5A 0.8 0.4 0.58 0.50 170 59 16 2.9 1.7 60 15 1.2 0.8 pF pF pF ns ns ns ns 1.4 Min Typ Max 1.0 10 2.0 Unit A A V S Marking Marking NV www.kexin.com.cn 1 |
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