 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| STC9015 PNP Silicon Transistor Low Frequency Amplifier * Collector-Base Voltage : VCBO= -60V * Complement to STC9014 * Suffix "-C" means Center Collector (1. Emitter 2. Collector 3. Base) 1 TO-92 1. Emitter 2. Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings -60 -50 -5 -150 250 150 -55 ~ 150 Units V V V mA mW C C Electrical Characteristics Ta=25C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE (on) fT Cob NF Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure Test Condition IC= -100A, IE=0 IC= -10mA. IB=0 IE = -10A. IC=0 VCB= --60V, IE=0 VEB= -5V, IC=0 VCE= -6V, IC= -1mA IC= -100mA, IB= -10mA VCE= -6V, IC= -1mA VCE= -6V, IC= -10mA VCB= -10V, IE = 0, f=1MHz VCE= -6V, IC= -0.3mA f=1MHz, Rs=10k -0.50 50 40 -0.18 -0.62 180 2.8 6.0 20 Min. -60 -50 -5 -100 -100 700 -0.3 -0.80 V V MHz pF dB Typ. Max. Units V V V nA nA hFE Classification Classification hFE A 40 ~ 140 B 120 ~ 240 C 200 ~ 400 D 350 ~ 700 1/2 Typical Characteristics STC9015 -50 -45 1000 VCE = -6V IB = -400A IC[mA], COLLECTOR CURRENT -40 -35 -30 -25 IB = -300A IB = -250A IB = -200A hFE, DC CURRENT GAIN IB = -350A 100 -20 IB = -150A -15 -10 -5 0 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 10 IB = -100A IB = -50A 1 -0.1 -1 -10 -100 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -10 -100 IC = 10 IB VCE = -6V IC[mA], COLLECTOR CURRENT -1 V BE(sat) -10 -0.1 -1 V CE(sat) -0.01 -1 -10 -100 -1000 -0.1 0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT 1000 IE = 0 f = 1MHz VCE = -6V Cob [pF], CAPACITANCE 10 100 1 -1 -10 -100 10 -1 -10 VCB [V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product 2/2 |
Price & Availability of STC9015
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |