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| HAF1002(L), HAF1002(S) Silicon P Channel MOS FET Series Power Switching REJ03G1133-0200 (Previous: ADE-208-586) Rev.2.00 Sep 07, 2005 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. Features * * * * Logic level operation (-4 to -6 V Gate drive) High endurance capability against to the short circuit Built-in the over temperature shut-down circuit Latch type shut-down operation (Need 0 voltage recovery) Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 4 1. Gate 2. Drain 3. Source 4. Drain 2 3 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) 1 1 2 3 D G Temperature Sensing Circuit Gate resistor Latch Circuit Gate Shutdown Circuit S Rev.2.00 Sep 07, 2005 page 1 of 8 HAF1002(L), HAF1002(S) Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C Symbol VDSS VGSS VGSS ID Note 1 ID (pulse) IDR Note 2 Pch Tch Tstg Value -60 -16 3 -15 -30 -15 50 150 -55 to +150 Unit V V V A A A W C C Typical Operation Characteristics Item Input voltage Input current (Gate non shut down) Input current (Gate shut down) Shut down temperature Gate operation voltage Symbol VIH VIL IIH1 IIH2 IIL IIH (sd) 1 IIH (sd) 2 Tsd VOP Min -3.5 -- -- -- -- -- -- -- -3.5 Typ -- -- -- -- -- -0.8 -0.35 175 -- Max -- -1.2 -100 -50 -1 -- -- -- -13 Unit V V A A A mA mA C V Test Conditions Vi = -8 V, VDS = 0 Vi = -3.5 V, VDS = 0 Vi = -1.2 V, VDS = 0 Vi = -8 V, VDS = 0 Vi = -3.5 V, VDS = 0 Channel temperature Rev.2.00 Sep 07, 2005 page 2 of 8 HAF1002(L), HAF1002(S) Electrical Characteristics (Ta = 25C) Item Drain current Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol ID1 ID2 V (BR) DSS V (BR) GSS V (BR) GSS IGSS1 IGSS2 IGSS3 IGSS4 Input current (shut down) Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Output capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Over load shut down operation time Note4 Min -7 -- -60 -16 3 -- -- -- -- -- -- -- -1.1 -- -- 5 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- -- -- -- -- -0.8 -0.35 -- -- 100 70 10 610 7.5 36 32 29 -1.0 200 3.7 1 Max -- -10 -- -- -- -100 -50 -1 100 -- -- -250 -2.25 130 90 -- -- -- -- -- -- -- -- -- -- Unit A mA V V V A A A A mA mA A V m m S pF s s s s V ns ms ms Test Conditions VGS = -3.5 V, VDS = -2 V VGS = -1.2 V, VDS = -2 V ID = -10 mA, VGS = 0 IG = -100 A, VDS = 0 IG = 100 A, VDS = 0 VGS = -8 V, VDS = 0 VGS = -3.5 V, VDS = 0 VGS = -1.2 V, VDS = 0 VGS = 2.4 V, VDS = 0 VGS = -8 V, VDS = 0 VGS = -3.5 V, VDS = 0 VDS = -50 V, VGS = 0 ID = -1 mA, VDS = -10 V ID = -7.5 A, VGS = -4 V Note 3 ID = -7.5 A, VGS = -10 V ID = -7.5 A, VDS = -10 V VDS = -10 V, VGS = 0 f = 1 MHz ID = -7.5 A VGS = -5 V RL = 4 IF = -15 A, VGS = 0 IF = -15 A, VGS = 0 diF/dt = 50 A/s VGS = -5 V, VDD = -12 V VGS = -5 V, VDD = -24 V Note 3 Note 3 IGS (op) 1 IGS (op) 2 IDSS VGS (off) RDS (on) RDS (on) |yfs| Coss td (on) tr td (off) tf VDF trr tos1 tos2 Notes: 3. Pulse test 4. Include the time shift based on increasing of channel temperature when operate under over load condition. Rev.2.00 Sep 07, 2005 page 3 of 8 HAF1002(L), HAF1002(S) Main Characteristics Power vs. Temperature Derating 80 -500 -200 Thermal shut down Operation area 20 s 10 DC 0 s Maximum Safe Operation Area Pch (W) ID (A) Drain Current 60 -100 -50 -20 -10 -5 -2 -1 Op 1 Channel Dissipation 40 PW er at ion m = (T s 10 c= m 20 Operation in this area is limited by RDS (on) s C ) 25 0 0 50 100 150 200 -0.5 Ta = 25C -0.3 -0.3 -0.5 -1 -2 -5 -10 -20 -50 -100 Case Temperature Tc (C) Drain to Source Voltage VDS (V) Typical Output Characteristics -50 -10 V -8 V -6 V -5 V -20 Typical Transfer Characteristics ID (A) ID (A) -40 -16 Tc = -25C 25C 75C -30 -12 Drain Current Drain Current -20 -4 V -3.5 V VGS = -3 V Pulse Test 0 -2 -4 -6 -8 -10 -8 -10 -4 VDS = -10 V Pulse Test 0 0 -1 -2 -3 -4 -5 0 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage VDS (on) (V) -2.0 Pulse Test -1.6 Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS (on) () 0.5 Pulse Test 0.2 0.1 0.05 VGS = -4 V -10 V -1.2 ID = -10 A -0.8 -0.4 -5 A -2 A 0.02 0.01 -0.1 -0.2 -0.5 -1 -2 0 0 -2 -4 -6 -8 -10 -5 -10 -20 -50 Gate to Source Voltage VGS (V) Drain Current ID (A) Rev.2.00 Sep 07, 2005 page 4 of 8 HAF1002(L), HAF1002(S) Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance |yfs| (S) 0.20 ID = -10 A 0.16 VGS = -4 V -10 A 0.08 -10 V Pulse Test 0 -40 0 40 80 120 160 -2, -5 A -5 A -2 A 50 VDS = -10 V Pulse Test 20 10 5 75C Tc = -25C Static Drain to Source on State Resistance RDS (on) () Forward Transfer Admittance vs. Drain Current 0.12 25C 2 1 0.04 0.5 -0.1 -0.2 -0.5 -1 -2 -5 -10 -20 -50 Case Temperature Tc (C) Drain Current ID (A) Body-Drain Diode Reverse Recovery Time Reverse Recovery Time trr (ns) 500 100 50 200 100 50 Switching Characteristics td(off) tf tr Switching Time t (s) 20 10 5 2 1 td(on) 20 di / dt = 50 A / s VGS = 0, Ta = 25C -5 -10 -20 -50 10 -0.1 -0.2 -0.5 -1 -2 0.5 -0.1 -0.2 -0.5 -1 -2 VGS = -5 V, VDD = -30 V PW = 300 s, duty 1 % -5 -10 -20 -50 Reverse Drain Current IDR (A) Drain Current ID (A) Reverse Drain Current vs. Source to Drain Voltage -20 Typical Capacitance vs. Drain to Source Voltage 10000 Reverse Drain Current IDR (A) Pulse Test -16 VGS = -5 V 0V Capacitance Coss (pF) 3000 -12 1000 -8 -4 300 VGS = 0 f = 1 MHz 100 0 -10 -20 -30 -40 -50 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 Source to Drain Voltage VSD (V) Drain to Source Voltage VDS (V) Rev.2.00 Sep 07, 2005 page 5 of 8 HAF1002(L), HAF1002(S) Gate to Source Voltage vs. Shutdown Time of Load-Short Test VGS (V) -12 -10 -8 -6 -4 -2 0 0.0001 VDD = -36 V -24 V -12 V -9 V Shutdown Case Temperature vs. Gate to Source Voltage Shutdown Case Temperature Tc (C) 200 180 Gate to Source Voltage 160 140 120 ID = -5 A 100 0 -2 -4 -6 -8 -10 0.001 0.01 0.1 1 Shutdown Time of Load-Short Test PW (S) Gate to Source Voltage VGS (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance s (t) 3 Tc = 25C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 ch - c (t) = s (t) * ch - c ch - c = 2.50C/W, Tc = 25C PDM p ot uls e 0.03 2 0.0 D= PW T PW T 0.0 1 h 1s 0.01 10 100 1m 10 m 100 m 1 10 Pulse Width PW (S) Switching Time Test Circuit Vin Vin Monitor D.U.T. RL 90% Vin -5 V 50 VDD = -30 V Vout td(on) 10% tr td(off) 10% tf 90% 90% Vout Monitor 10% Waveform Rev.2.00 Sep 07, 2005 page 6 of 8 HAF1002(L), HAF1002(S) Package Dimensions JEITA Package Code RENESAS Code PRSS0004AE-A Package Name LDPAK(L) / LDPAK(L)V MASS[Typ.] 1.40g Unit: mm (1.4) 4.44 0.2 10.2 0.3 1.3 0.15 11.3 0.5 0.3 10.0 + 0.5 - 8.6 0.3 1.3 0.2 1.37 0.2 0.76 0.1 2.54 0.5 2.54 0.5 11.0 0.5 0.2 0.86 + 0.1 - 2.49 0.2 0.4 0.1 JEITA Package Code SC-83 RENESAS Code PRSS0004AE-B Package Name LDPAK(S)-(1) / LDPAK(S)-(1)V MASS[Typ.] 1.30g Unit: mm 4.44 0.2 10.2 0.3 (1.4) 8.6 0.3 + 0.3 - 0.5 10.0 (1.5) (1.5) 2.49 0.2 0.2 0.1 + 0.1 - 7.8 7.0 2.2 1.37 0.2 1.3 0.2 2.54 0.5 0.3 3.0 + 0.5 - 0.2 0.86 + 0.1 - 0.4 0.1 2.54 0.5 Rev.2.00 Sep 07, 2005 page 7 of 8 1.7 1.3 0.15 7.8 6.6 HAF1002(L), HAF1002(S) Ordering Information Part Name HAF1002-90L HAF1002-90S HAF1002-90STL HAF1002-90STR Quantity Max: 50 pcs/sack Max: 50 pcs/sack 1000 pcs/Reel 1000 pcs/Reel Sack Sack Embossed tape Embossed tape Shipping Container Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 8 of 8 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 2-796-3115, Fax: <82> 2-796-2145 http://www.renesas.com Renesas Technology Malaysia Sdn. Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510 (c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .3.0 |
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