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SMD Type Transistors Silicon NPN High Voltage Switching Transistor FMMT459 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm +0.1 2.4-0.1 1 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Low saturation voltage - 90mV @ 50mA hFE 50 @ 30 Ma 0.55 6V reverse blocking capability +0.1 1.3-0.1 Features 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 IC=150mA continuous +0.1 0.38-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Emitter-collector voltage Peak pulse current Continuous collector current * 1 Base current Power dissipation @ TA=25 * 1 Linear derating factor Power dissipation @ TA=25 *2 Linear derating factor Operating and storage temperature range ?Junction to ambient *1 Junction to ambient *2 Tj:Tstg ReJA ReJA PD Symbol VCBO VCEV VCEO VEBO VECV ICM IC IB PD Rating 500 500 450 6 6 0.5 0.15 0.2 625 5 806 6.4 -55 to +150 200 155 /W /W A mW mW/ mW mW/ Unit V V V V V A *1 For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of 1oz copper, in still air conditions *2 as above measured at t<5secs. 0-0.1 www.kexin.com.cn 1 SMD Type FMMT459 Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Emitter-base breakdown voltage Collector-emitter cut-off current Collector-base cut-off current Emitter-base cut-off current Static forward current transfer ratio Symbol BVCBO BVCEV BVCEO BVEBO BVECV ICES ICBO IEBO hFE IC=100iA IC=10iA,0.3V IC=10mA IE=100iA IC=1iA,0.3V VCE=450V VCB=450V VEB=5V IC=30mA,VCE=10V IC=50mA,VCE=10V * Collector-emitter saturation voltage * Base-emitter saturation voltage * Base-emitter turn on voltage * Transition frequency Output capacitance Turn-on time Turn-off time VCE(sat) IC=20mA,IB=2mA IC=50mA,IB=6mA VBE(sat) IC=50mA,IB=5mA VBE(on) IC=50mA,VCE=10V fT Cobo ton toff IC=10mA,VCE=20V,f=20MHz VCB=20V, f=1MHz IC=50mA, VCC=100V IB1=5mA, IB2=10mA 2% VBC -6V VBE -1V Testconditons Transistors Min 500 500 450 6 6 Typ 700 700 500 8.1 8.1 Max Unit V V V V V 100 100 100 50 120 70 60 70 0.76 0.71 50 5 113 3450 75 90 0.9 0.9 nA nA nA mV mV V V MHz pF ns ns * Measured under pulsed conditions. Pulse width = 300 is; duty cycle Marking Marking 459 2 www.kexin.com.cn |
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