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| TBB1005 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier REJ03G0843-0900 Rev.9.00 Aug 22, 2006 Features * * * * Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Suitable for World Standard Tuner RF amplifier. Very useful for total tuner cost reduction. Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions. * Provide mini mold packages; CMPAK-6 Outline RENESAS Package code: PTSP0006JA-A (Package name: CMPAK-6) 6 5 4 2 1 3 1. Drain(1) 2. Source 3. Drain(2) 4. Gate-1(2) 5. Gate-2 6. Gate-1(1) Notes: 1. Marking is "EM". 2. TBB1005 is individual type number of RENESAS TWIN BBFET. Rev.9.00 Aug 22, 2006 page 1 of 9 TBB1005 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Symbol VDS VG1S VG2S Ratings 6 +6 -0 +6 -0 30 250 150 -55 to +150 Unit V V V mA mW C C Drain current ID Channel power dissipation Pch*3 Channel temperature Tch Storage temperature Tstg Notes: 3. Value on the glass epoxy board (49mm x 38mm x 1mm). Electrical Characteristics (Ta = 25C) The below specification are applicable for UHF unit (FET1) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Gate1 to source cutoff current Gate2 to source cutoff current Gate1 to source cutoff voltage Gate2 to source cutoff voltage Drain current Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Power gain Noise figure Symbol V(BR)DSS V(BR)G1SS V(BR)G2SS IG1SS IG2SS VG1S(off) VG2S(off) ID(op) |yfs| Ciss Coss Crss PG NF Min 6 +6 +6 -- -- 0.5 0.5 13 21 1.4 1.0 -- 16 -- Typ -- -- -- -- -- 0.75 0.75 17 26 1.8 1.4 0.02 21 1.7 Max -- -- -- +100 +100 1.0 1.0 21 31 2.2 1.8 0.04 -- 2.5 Unit V V V nA nA V V mA mS pF pF pF dB dB Test conditions ID = 200 A, VG1S = VG2S = 0 IG1 = +10 A, VG2S = VDS = 0 IG2 = +10 A, VG1S = VDS = 0 VG1S = +5 V, VG2S = VDS = 0 VG2S = +5 V, VG1S = VDS = 0 VDS = 5 V, VG2S = 4 V ID = 100 A VDS = 5 V, VG1S = 5 V ID = 100 A VDS = 5 V, VG1 = 5 V VG2S = 4 V, RG = 100 k VDS = 5 V, VG1 = 5 V, VG2S = 4 V RG = 100 k, f = 1 kHz VDS = 5 V, VG1 = 5 V VG2S = 4 V, RG = 100 k f = 1 MHz VDS = VG1 = 5 V, VG2S = 4 V RG = 100 k, f = 900 MHz Zi = S11*, Zo = S22*(:PG) Zi = S11opt (:NF) Rev.9.00 Aug 22, 2006 page 2 of 9 TBB1005 Electrical Characteristics (cont.) (Ta = 25C) The below specification are applicable for VHF unit (FET2) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Gate1 to source cutoff current Gate2 to source cutoff current Gate1 to source cutoff voltage Gate2 to source cutoff voltage Drain current Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Power gain Noise figure Symbol V(BR)DSS V(BR)G1SS V(BR)G2SS IG1SS IG2SS VG1S(off) VG2S(off) ID(op) |yfs| Ciss Coss Crss PG NF Min 6 +6 +6 -- -- 0.5 0.5 14 20 2.2 1.2 -- 22 -- Typ -- -- -- -- -- 0.75 0.75 18 25 2.6 1.6 0.03 27 1.2 Max -- -- -- +100 +100 1.0 1.0 22 30 3.0 2.0 0.05 -- 1.7 Unit V V V nA nA V V mA mS pF pF pF dB dB Test conditions ID = 200 A, VG1S = VG2S = 0 IG1 = +10 A, VG2S = VDS = 0 IG2 = +10 A, VG1S = VDS = 0 VG1S = +5 V, VG2S = VDS = 0 VG2S = +5 V, VG1S = VDS = 0 VDS = 5 V, VG2S = 4 V ID = 100 A VDS = 5 V, VG1S = 5 V ID = 100 A VDS = 5 V, VG1 = 5 V, VG2S = 4 V, RG = 82 k VDS = 5 V, VG1 = 5 V, VG2S = 4 V, RG = 82 k, f = 1 kHz VDS = 5V , VG1 = 5 V VG2S = 4 V, RG = 82 k f = 1 MHz VDS = VG1 = 5 V, VG2S = 4 V RG = 82 k, f = 200 MHz Rev.9.00 Aug 22, 2006 page 3 of 9 TBB1005 Test Circuits * DC Biasing Circuit for Operating Characteristic Items (ID(op), |yfs|, Ciss, Coss, Crss, NF, PG) Measurment of FET1 RG VG1 Gate 1 Gate 2 Open VG2 ID VD A Drain Source Open Measurment of FET2 Gate 2 VG2 Open VG1 Gate 1 RG A Open Source Drain ID VD Rev.9.00 Aug 22, 2006 page 4 of 9 TBB1005 * Equivalent Circuit No.1 Drain(1) No.6 Gate-1(1) No.2 Source BBFET-(1) BBFET-(2) No.3 Drain(2) No.5 Gate-2 No.4 Gate-1(2) * 200 MHz Power Gain, Noise Figure Test Circuit VT 1000p VG2 1000p VT 1000p 47k Input(50) L1 1000p 36p 1000p 47k TWINBBFET L2 1000p 47k Output(50) 10p max 1000p 1SV70 RG 82k RFC 1SV70 1000p VD = VG1 Unit : Resistance () Capacitance (F) L1 : 1mm Enameled Copper Wire,Inside dia 10mm, 2Turns L2 : 1mm Enameled Copper Wire,Inside dia 10mm, 2Turns RFC : 1mm Enameled Copper Wire,Inside dia 5mm, 2Turns Rev.9.00 Aug 22, 2006 page 5 of 9 TBB1005 Maximum Channel Power Dissipation Curve Channel Power Dissipation Pch* (mW) 400 Typical Output Characteristics (FET1) 25 G= 82 200 10 10 18 15 0 k 0 12 k 0 15 100 0k 5 0 50 100 150 200 0 1 2 3 4 k k 300 Drain Current ID (mA) 20 VG2S = 4 V VG1 = VDS R 68 k 5 Ambient Temperature Ta (C) * Value on the glass epoxy board (49mm x 38mm x 1mm) Drain to Source Voltage VDS (V) Drain Current vs. Gate1 Voltage (FET1) 25 VDS = 5 V RG = 120 k 4V Forward Transfer Admittance vs. Gate1 Voltage (FET1) Forward Transfer Admittance |yfs| (mS) 50 VDS = 5 V VG2S = 4 V 40 Drain Current ID (mA) 20 15 3V 30 100 k RG = 68 k 10 2V 20 150 k 5 VG2S = 1 V 10 0 1 2 3 4 5 0 1 2 3 4 5 Gate1 Voltage VG1 (V) Drain Current vs. Gate Resistance (FET1) 30 25 4 VDS = 5 V VG1 = 5 V VG2S = 4 V Gate1 Voltage VG1 (V) Input Capacitance vs. Gate2 to Source Voltage (FET1) Input Capacitance Ciss (pF) Drain Current ID (mA) 3 20 15 10 5 0 10 2 1 VDS = 5 V VG1 = 5 V RG = 100 k f = 1 MHz 0 1 2 3 4 20 50 100 200 500 1000 0 Gate Resistance RG (k) Gate2 to Source Voltage VG2S (V) Rev.9.00 Aug 22, 2006 page 6 of 9 TBB1005 Drain Current vs. Gate1 Voltage (FET2) 25 k Typical Output Characteristics (FET2) 25 VG2S = 4 V VG1 = VDS k 56 G= Drain Current ID (mA) 68 Drain Current ID (mA) 20 20 VDS = 5 V RG = 82 k 4V R 82 k k 15 15 0 3V 2V 10 0 12 0k 15 k 10 10 5 5 VG2S = 1 V 0 1 2 3 4 5 0 1 2 3 4 5 Drain to Source Voltage VDS (V) Forward Transfer Admittance vs. Gate1 Voltage (FET2) Forward Transfer Admittance |yfs| (mS) 50 VDS = 5 V VG2S = 4 V 40 30 Gate1 Voltage VG1 (V) Drain Current vs. Gate Resistance (FET2) VDS = 5 V VG1 = 5 V VG2S= 4 V Drain Current ID (mA) 5 25 20 15 10 5 0 10 30 82 k RG = 56 k 20 120 k 10 0 1 2 3 4 20 50 100 200 500 1000 Gate1 Voltage VG1 (V) Gate Resistance RG (k) Power Gain vs. Gate Resistance (FET2) 40 35 Input Capacitance vs. Gate2 to Source Voltage (FET2) 4 Input Capacitance Ciss (pF) 3 Power Gain PG (dB) 30 25 20 15 10 10 2 VDS = 5 V VG1 = 5 V RG = 82 k f = 1 MHz 0 1 2 3 4 1 VDS = 5 V VG1 = 5 V VG2S = 4 V f = 200 MHz 20 50 100 200 500 1000 0 Gate2 to Source Voltage VG2S (V) Gate Resistance RG (k) Rev.9.00 Aug 22, 2006 page 7 of 9 TBB1005 Noise Figure vs. Gate Resistance (FET2) 4 0 VDS = 5 V VG1 = 5 V VG2S = 4 V f = 200 MHz Gain Reduction vs. Gate2 to Source Voltage (FET2) Gain Reduction GR (dB) Noise Figure NF (dB) 3 10 20 2 30 VDS = VG1 = 5 V RG = 82 k 1 40 0 10 50 20 50 100 200 500 1000 4 3 2 1 0 Gate Resistance RG (k) Gate2 to Source Voltage VG2S (V) Rev.9.00 Aug 22, 2006 page 8 of 9 TBB1005 Package Dimensions Package Name CMPAK-6 JEITA Package Code SC-88 RENESAS Code PTSP0006JA-A Previous Code CMPAK-6 / CMPAK-6V MASS[Typ.] 0.006g D e A Q c E HE LP L A xM A SA b L1 A3 e Reference Symbol Dimension in Millimeters A2 A yS b b1 c c1 A1 S e1 l1 b2 A-A Section Pattern of terminal position areas A A1 A2 A3 b b1 c c1 D E e HE L L1 LP x y b2 e1 l1 Q Min 0.8 0 0.8 0.15 0.1 1.8 1.15 2.0 0.3 0.1 0.2 Nom 0.9 0.25 0.22 0.2 0.13 0.11 2.0 1.25 0.65 2.1 Max 1.1 0.1 1.0 0.3 0.15 2.2 1.35 2.2 0.7 0.5 0.6 0.05 0.05 0.35 0.9 1.5 0.25 Ordering Information Part Name TBB1005EMTL-E Quantity 3000 Shipping Container 178 mm Reel, 8 mm Emboss Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.9.00 Aug 22, 2006 page 9 of 9 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120 Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145 http://www.renesas.com Renesas Technology Malaysia Sdn. Bhd Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510 (c) 2006. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .6.0 |
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