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| SUP60N02-4M5P Vishay Siliconix N-Channel 20-V (D-S) 175 C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 20 rDS(on) () 0.0045 at VGS = 10 V 0.0065 at VGS = 4.5 V ID (A)a 60 60 FEATURES * * * * TrenchFET(R) Power MOSFET 175 C Junction Temperature 100 % Rg Tested 100 % UIS Tested RoHS COMPLIANT APPLICATIONS * OR-ing TO-220AB D DRAIN connected to TAB G GDS Top View Ordering Information: SUP60N02-4M5P-E3 (Lead (Pb)-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175 C) Pulsed Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25 C TA = 25 Cd TC = 25 C TC = 100 C Symbol VDS VGS ID IDM IAS EAS PD TJ, Tstg Limit 20 20 60a 60a 120 50 125 120 c Unit V A mJ W C 3.75 - 55 to 175 THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount) Junction-to-Case Notes: a. Package limited. b. Duty cycle 1 %. c. See SOA curve for voltage derating. d. When mounted on 1" square PCB (FR-4 material). d Symbol RthJA RthJC Limit 40 1.25 Unit C/W Document Number: 69821 S-80182-Rev. A, 04-Feb-08 www.vishay.com 1 SUP60N02-4M5P Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta V(BR)DSS VGS(th) IGSS IDSS ID(on) VDS = 0 V, ID = 250 A VDS = VGS, ID = 250 A VDS = 0 V, VGS = 20 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 125 C VDS = 20 V, VGS = 0 V, TJ = 175 C VDS 5 V, VGS = 10 V VGS = 10 V, ID = 20 A Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 20 A, TJ = 125 C VGS = 10 V, ID = 20 A, TJ = 175 C VGS = 4.5 V, ID = 20 A Forward Transconductance Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargeb Gate-Source Charge Gate-Drain Chargeb Gate Resistance Turn-On Delay Time Rise Timeb Turn-Off Delay Time Fall Timeb Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge b b b a Symbol Test Conditions Min. 20 1.0 Typ. Max. Unit 3 100 1 50 250 V nA A A 100 0.0036 0.0045 0.0068 0.008 0.0052 95 5950 0.0065 gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf IS ISM VSD trr IRM Qrr VDS = 10 V, ID = 20 A S VGS = 0 V, VDS = 10 V, f = 1 MHz 985 365 33 50 pF VDS = 10 V, VGS = 4.5 V, ID = 50 A 0.75 VDD = 10 V, RL = 0.2 ID 50 A, VGEN = 10 V, Rg = 1.0 18 7 1.5 15 7 35 8 2.3 25 11 55 12 60 100 nC ns Source-Drain Diode Ratings and Characteristics TC = 25 Cc A V ns A C IF = 20 A, VGS = 0 V IF = 20 A, di/dt = 100 A/s 0.85 45 1.7 0.039 1.5 90 3.4 0.155 Notes: a. Pulse test; pulse width 300 s, duty cycle 2 % b. Independent of operating temperature. c. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 69821 S-80182-Rev. A, 04-Feb-08 SUP60N02-4M5P Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 120 VGS = 10 thru 5 V VGS = 4 V 100 I D - Drain Current (A) I D - Drain Current (A) 90 120 80 60 60 TC = 25 C 40 30 20 VGS = 3 V 0 0 1 2 3 4 5 0 0 1 2 3 4 5 TC = 125 C TC = - 55 C VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 200 TC = -55 C r DS(on) - On-Resistance () g fs - Transconductance (S) 160 0.008 0.010 Transfer Characteristics 120 TC = 25 C 0.006 VGS = 4.5 V 80 TC = 125 C 0.004 VGS = 10 V 40 0.002 0 0 10 20 30 40 50 0 0 20 40 60 80 100 ID - Drain Current (A) ID - Drain Current (A) Transconductance 0.020 ID = 20 A r DS(on) - On-Resistance () 0.016 C - Capacitance (pF) 6000 7500 On-Resistance vs. Drain Current Ciss 0.012 4500 0.008 TA = 150 C 3000 Coss 1500 0.004 TA = 25 C 0 0 2 4 6 8 10 0 0 Crss 2 4 6 8 10 12 14 16 18 20 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Document Number: 69821 S-80182-Rev. A, 04-Feb-08 Capacitance www.vishay.com 3 SUP60N02-4M5P Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 10 ID = 50 A VGS - Gate-to-Source Voltage (V) 8 VDS = 16 V 6 r DS(on) - On-Resistance (Normalized) VDS = 10 V 1.7 VGS = 10 V 1.4 VGS = 4.5 V 1.1 2.0 ID = 20 A 4 2 0.8 0 0 20 40 60 80 0.5 - 50 - 25 0 25 50 75 100 125 150 175 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge 100 TJ = 150 C 10 I S - Source Current (A) TJ = 25 C 1 VGS(th) Variance (V) 0.0 0.5 On-Resistance vs. Junction Temperature - 0.5 ID = 5 mA 0.1 - 1.0 0.01 ID = 250 A 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 - 1.5 - 50 - 25 0 25 50 75 100 125 150 175 VSD - Source-to-Drain Voltage (V) TJ - Temperature (C) Source-Drain Diode Forward Voltage 33 32 ID = 1 mA Typical Drain-Source Brakdown Voltage 31 30 29 28 27 26 - 50 1 0.00001 100 Threshold Voltage I DAV (A) TJ = 150 C 10 TJ = 25 C - 25 0 25 50 75 100 125 150 175 0.0001 0.001 t in (s) 0.01 0.10 1 TJ - Temperature (C) Typical Drain-source Brakdown Voltage vs. Junction Temperature www.vishay.com 4 Single Pulse Avalanche Current vs. Time Document Number: 69821 S-80182-Rev. A, 04-Feb-08 SUP60N02-4M5P Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 150 1000 120 100 I D - Drain Current (A) I D - Drain Current (A) 90 Package Limited 60 Limited by rDS(on)* 10 s, 100 s 1 ms 10 ms 10 100 ms 1 s, 10 s 30 1 TA = 25 C Single Pulse 0 0 25 50 75 100 125 150 175 0.1 0.1 1 10 100 TA - Ambient Temperature (C) VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which rDS(on) is specified Drain Current vs. Ambient Temperature Safe Operating Area 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?69821. Document Number: 69821 S-80182-Rev. A, 04-Feb-08 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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