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| STK38N3LLH5 N-channel 30 V, 0.0014 38 A, PolarPAK(R) , STripFETTMV Power MOSFET Preliminary Data Features Type STK38N3LLH5 VDSS 30 V RDS(on) max <0.0018 RDS(on)*Qg 61.2 nC*m Ultra low top and bottom junction to case thermal resistance Extremely low on-resistance RDS(on) RDS(on)*Qg industry benchmark High avalanche ruggedness Fully encapsulated die 100% Matte tin finish (in compliance with the 2002/95/EC european directive) PolarPAK(R) is a trademark of VISHAY Figure 1. Internal schematic diagram PolarPAK(R) Application Switching applications Description This product utilizes the 5th generation of design rules of ST's proprietary STripFETTM technology. The lowest available RDS(on)*Qg, in this chip scale package, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved. Bottom View Top View Table 1. Device summary Order code Marking 383L5 Package PolarPAK(R) Packaging Tape and reel STK38N3LLH5 September 2008 Rev 3 1/13 www.st.com 13 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Contents STK38N3LLH5 Contents 1 2 3 4 5 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test circuits .............................................. 6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 STK38N3LLH5 Electrical ratings 1 Electrical ratings Table 2. Symbol VDS VGS ID (1) ID IDM (2) PTOT (1) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Derating factor Value 30 22 38 23.75 152 5.2 0.0416 TBD -55 to 150 Unit V V A A A W W/C J C EAS (3) TJ Tstg Single pulse avalanche energy Operating junction temperature Storage temperature 1. When mounted on FR-4 board of 1inch2, 2 oz. Cu. and 10sec 2. Pulse width limited by package 3. Starting TJ = 25C, ID = 15A, VDD = 25V Table 3. Symbol Thermal data Parameter Typ. 20 0.8 2.2 Max. 24 1 2.7 Unit C/W C/W C/W Rthj-amb(1) Thermal resistance junction-amb Rthj-c(2) Rthj-c(3) Thermal resistance junction-case (top drain) Thermal resistance junction-case (source) 1. When mounted on FR-4 board of 1inch2, 2 oz. Cu. and 10sec 2. Steady State 3. Measured at Source pin when the device is mounted on FR-4 board in steady state 3/13 Electrical characteristics STK38N3LLH5 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 4. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250 A, VGS= 0 VDS = Max rating, VDS = Max rating,Tc=125C VGS = 22 V VDS= VGS, ID = 250 A VGS= 10 V, ID= 19 A VGS= 4.5 V, ID= 19 A 1 Min. 30 1 10 100 Typ. Max. Unit V A A nA V 2.5 0.0014 0.0018 0.0017 0.0024 Table 5. Symbol Ciss Coss Crss Qg Qgs Qgd Qgs1 Qgs2 Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Pre Vth gate-to-source charge Post Vth gate-to-source charge Gate input resistance Test conditions Min. Typ. 4640 980 165 36 7.1 24.5 TBD TBD Max. Unit pF pF pF nC nC nC nC nC VDS =25 V, f=1 MHz, VGS=0 VDD= 24 V, ID = 38 A VGS =4.5 V (see Figure 3) VDD= 24 V, ID = 38 A VGS =4.5V (see Figure 8) f=1 MHz Gate DC Bias = 0 Test signal level = 20 mV open drain RG TBD 4/13 STK38N3LLH5 Electrical characteristics Table 6. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD= 24 V, ID= 19 A, RG=4.7 , VGS=4.5 V (see Figure 2) Min. Typ. TBD TBD TBD TBD Max. Unit ns ns ns ns Table 7. Symbol ISD ISDM (1) Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 19 A, VGS=0 ISD= 38 A, di/dt = 100 A/s, VDD=20 V, TJ=150C (see Figure 7) TBD TBD TBD Test conditions Min. Typ. Max. 38 152 1.1 Unit A A V ns nC A VSD (2) trr Qrr IRRM 1. Pulse width limited by package 2. Pulsed: pulse duration = 300s, duty cycle 1.5% 5/13 Test circuits STK38N3LLH5 3 Figure 2. Test circuits Switching times test circuit for resistive load Figure 3. Gate charge test circuit Figure 4. Test circuit for inductive load Figure 5. switching and diode recovery times Unclamped inductive load test circuit Figure 6. Unclamped inductive waveform Figure 7. Switching time waveform 6/13 STK38N3LLH5 Figure 8. Gate charge waveform Id Vds Vgs Test circuits Vgs(th) Qgs1 Qgs2 Qgd 7/13 Package mechanical data STK38N3LLH5 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 8/13 STK38N3LLH5 Package mechanical data Table 8. Ref. PolarPAK(R) (option "L") mechanical data mm Min. Typ. 0.80 Max. 0.85 0.05 0.48 0.41 2.19 0.89 0.23 0.20 6 5.74 5.01 4.75 0.23 0.45 0.31 0.45 4.22 1.08 1.37 0.24 4.30 3.43 0.22 0.05 0.15 3.48 0.56 1.20 3.90 0.18 0 10 0.36 12 0 0.20 3.64 0.76 0.25 4.10 0.95 4.50 3.58 4.70 3.73 4.37 1.13 0.41 0.56 0.51 0.56 4.52 1.18 0.58 0.51 2.29 1.04 0.33 0.25 6.15 5.89 5.16 4.90 0.68 0.61 2.39 1.19 0.43 0.30 6.30 6.04 5.31 5.05 0.019 0.016 0.086 0.035 0.009 0.008 0.236 0.226 0.197 0.187 0.009 0.018 0.012 0.018 0.166 0.043 0.054 0.009 0.169 0.135 0.009 0.002 0.006 0.137 0.022 0.047 0.154 0.007 10 0.014 12 0.008 0.143 0.030 0.010 0.161 0.037 0.177 0.141 0.185 0.147 0.172 0.044 0.016 0.022 0.020 0.022 0.178 0.046 0.023 0.020 0.090 0.041 0.013 0.010 0.242 0.232 0.203 0.193 Min. 0.030 inch Typ. 0.031 Max. 0.033 0.002 0.027 0.024 0.094 0.047 0.017 0.012 0.248 0.238 0.209 0.199 A A1 b1 b2 b3 b4 b5 c D D1 E E1 H1 H2 H3 H4 K1 K2 K3 K4 M1 M2 M3 M4 P1 T1 T2 T3 T4 T5 < 0.75 9/13 Package mechanical data STK38N3LLH5 Figure 9. PolarPAK(R) (option "L") drawings 10/13 STK38N3LLH5 Figure 10. Recommended PAD layout Package mechanical data 11/13 Revision history STK38N3LLH5 5 Revision history Table 9. Date 19-Feb-2008 28-Apr-2008 03-Sep-2008 Document revision history Revision 1 2 3 First release RDS(on) value has been update in Table 4 VGS value has been update on Table 2 and Table 4 Changes 12/13 STK38N3LLH5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 13/13 |
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