Part Number Hot Search : 
LTC40 ASM3P 0022122 29L682C 55000 330M1 FA764 C7973
Product Description
Full Text Search
 

To Download RT3NDDM Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 PRELIMINARY
RT3NDDM
Composite Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type
DESCRIPTION
RT3NDDM is a composite transistor built with two RT1N237 chips in SC-88 package.
OUTLINE DRAWING
2.1 1.25 @ 0.65 A B E D C 0.2
Unit mm *F
FEATURE
Silicon NPN epitaxial type Built in bias resistor (R1=2.2k*C R2=47k) Each transistor elements are independent. Mini package for easy mounting
2.0
APPLICATION
Inverted circuit, switching circuit, interface circuit, driver circuit
0.65 0.13 D R1 RTr1 RTr2 R1 A B R2 0*0.1 E C
TERMINAL CONNECTOR @ EMITTER1 *F A BASE1 *F B COLLECTOR2 *F C EMITTER2 *F D BASE2 *F E :COLLECTOR1 JEITA*F SC-88
@
MAXIMUM RATING (Ta=25 *Z)
SYMBOL VCBO VEBO VCEO IC ICM PC Tj Tstg PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak Collector current Collector dissipation *iTotal, Ta=25* * Zj Junction temperature Storage temperature RATING 50 10 50 100 200 150 *{150 -55**{ 150 UNIT V V V mA mA mW *Z *Z
0.9
R2
0.65
MARKING
E D C
.
NDD
@ A B
ISAHAYA ELECTRONICS CORPORATION
PRELIMINARY
ELECTRICAL CHARACTERISTICS (Ta=25 *Z)
Symbol V(BR)CEO ICBO hFE VCE(sat) VI(ON) VI(OFF) R1 R2/R1 fT Parameter Collector to Emitter break down voltage Collector cut off current DC forward current gain Collector to Emitter saturation voltage Input on voltage Input off voltage Input resistor Resistor ratio Gain band width product Test conditions IC=100E BE=* A,R VCB =50V,IE=0 VCE=5V,IC=10mA IC=10mA,IB=0.5mA VCE=0.2V,IC=5mA VCE=5V,IC=100E A VCE=6V,IE=-10mA
RT3NDDM
Composite Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type
Limits Min 50 80 0.5 1.5 17 Typ 0.1 0.7 0.6 2.2 22 200 Max 0.1 0.3 1.1 2.9 26 -
Unit V E A V V V k MHZ
TYPICAL CHARACTERISTICS ( Tr1 Tr2 ) *C
INPUT ON VOLTAGE VS. COLLECTOR CURRENT VCE=0.2V DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT VCE=5V
10 INPUT ON VOLTAGE VI(ON)(V)
1000 DC FORWARD CURRENT GAIN
1
100
0.1 1 10 COLLECTOR CURRENT IC(mA) COLLECTOR CURRENT VS. INPUT OFF VOLTAGE VCE=5V 100
10 1 10 COLLECTOR CURRENT IC(mA) 100
1000 COLLECTOR CURRENT IC(mA)
100
10 0.0 0.4 0.8 1.2 1.6 2.0 INPUT OFF VOLTAGE*@VI(OFF)(V)
ISAHAYA ELECTRONICS CORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
Keep safety first in your circuit designs! *ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. Notes regarding these materials *These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the customer's application; they don't convey any license under any intellectual property rights, or any other rights, belonging ISAHAYA or third party. *ISAHAYA Electronics Corporation assumes no responsibility for any damage, or infringement of any third party's rights , originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials. *All information contained in these materials, including product data, diagrams and charts, represent information on products at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed herein. *ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes , such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. *The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these materials. *If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to t e export control laws and regulations of Japan and/or the country of destination is h prohibited. *Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these materials or the products contained therein.
Jan.2003


▲Up To Search▲   

 
Price & Availability of RT3NDDM

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X