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IRFP22N60K, SiHFP22N60K
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 150 45 76 Single
D
FEATURES
600 0.24
* Hard Switching Primary or PFS Switch * Low Gate Charge Qg Results in Simple Drive Requirement * Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Available
RoHS*
COMPLIANT
* Fully Characterized Capacitance and Avalanche Voltage and Current * Enhanced Body Diode dV/dt Capability * Lead (Pb)-free Available
TO-247
G
BENEFITS
* Switch Mode Power Supply (SMPS) * Uninterruptible Power Supply
S N-Channel MOSFET
S D G
* High Speed Power Switching * Motor Drive
ORDERING INFORMATION
Package Lead (Pb)-free SnPb TO-247 IRFP22N60KPbF SiHFP22N60K-E3 IRFP22N60K SiHFP22N60K
ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Repetitive Avalanche Currenta Energya TC = 25 C EAS IAR EAR PD dV/dt TJ, Tstg for 10 s VGS at 10 V TC = 25 C TC = 100 C SYMBOL VDS VGS ID IDM LIMIT 600 30 22 14 88 2.9 380 22 37 370 15 - 55 to + 150 300d W/C mJ A mJ W V/ns C A UNIT V
Maximum Power Dissipation Peak Diode Recovery dV/dtc
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 C, L = 1.5 mH, RG = 25 , IAS = 22 A (see fig. 12). c. ISD 22 A, dI/dt 360 A/s, VDD VDS, TJ 150 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91208 S-81274-Rev. A, 16-Jun-08 www.vishay.com 1
IRFP22N60K, SiHFP22N60K
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SYMBOL RthJA RthCS RthJC TYP. 0.24 MAX. 40 0.34 C/W UNIT
SPECIFICATIONS TJ = 25 C, unless otherwise noted
PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time IS ISM VSD trr MOSFET symbol showing the integral reverse p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss Coss Coss eff. Qg Qgs Qgd td(on) tr td(off) tf
VGS = 0 V, ID = 250 A Reference to 25 C, ID = 1 VGS = 30 V VDS = 600 V, VGS = 0 V VDS = 480 V, VGS = 0 V, TJ = 125 C VGS = 10 V ID = 13 Ab VDS = 50 V, ID = 13 Ab mAd VDS = VGS, ID = 250 A
600 3.0 11
0.30 0.240 -
5.0 100 50 250 0.280 -
V V/C V nA A S
VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 VDS = 1.0 V , f = 1.0 MHz VGS = 0 V VDS = 480 V , f = 1.0 MHz VDS = 0 V to 480 V VGS = 10 V ID = 22 A, VDS = 480 V see fig. 6 and 13b
-
3570 350 36 4710 92 180 26 99 48 37
150 45 76 ns nC pF
VDD = 300 V, ID = 22 A, RG = 6.2, VGS = 10 V, see fig. 10b
-
590 670 7.2 8.5 26
22 A 88 1.5 890 1010 11 13 39 V ns
G
S
TJ = 25 C, IS = 22 A, VGS = 0 Vb TJ = 25 C TJ = 125 C TJ = 25 C TJ =1 25 C TJ = 25 C IF = 22 A, dI/dt = 100 A/sb
-
Body Diode Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time
Qrr IRRM ton
C
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s; duty cycle 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS. www.vishay.com 2 Document Number: 91208 S-81274-Rev. A, 16-Jun-08
IRFP22N60K, SiHFP22N60K
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
100
VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP
100.00
10
ID, Drain-to-Source Current ( A)
ID, Drain-to-Source Current (A)
T J = 150C
10.00
1
1.00
0.1
T J = 25C
5.0V
0.01
0.10
20s PULSE WIDTH Tj = 25C
0.001 0.1 1 10 100
0.01 5.0 6.0 7.0
VDS = 50V 20s PULSE WIDTH
8.0 9.0 10.0
VDS, Drain-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics
VGS , Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics
100
r , Drain-to-Source On Resistance DS(on) (Normalized)
ID, Drain-to-Source Current (A)
10
VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP
3.0
I D = 22A
2.5
2.0
1.5
5.0V
1
1.0
20s PULSE WIDTH Tj = 150C
0.1 0.1 1 10 100
0.5
V GS = 10V
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics
TJ, Junction Temperature ( C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91208 S-81274-Rev. A, 16-Jun-08
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IRFP22N60K, SiHFP22N60K
Vishay Siliconix
100000
VGS = 0V, f = 1 MHZ C iss = C gs + C gd , C ds SHORTED Crss Coss =C gd =C +C ds gd
100.0
10000
ISD, Reverse Drain Current (A)
C, Capacitance (pF)
Ciss
1000
10.0
T J = 150C
Coss
100
1.0 T J = 25C
Crss
10 1 10 100 1000
0.1 0.2 0.4 0.6 0.8 1.0 VDS, Drain-to-Source Voltage (V)
VGS = 0V 1.2 1.4
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
VSD, Source-toDrain Voltage (V) Fig. 7 - Typical Source-Drain Diode Forward Voltage
20 ID= 22A
1000
VGS , Gate-to-Source Voltage (V)
16
ID, Drain-to-Source Current (A)
VDS= 480V VDS= 300V VDS= 120V
OPERATION IN THIS AREA LIMITED BY RDS(on) 100
12
10
100sec
8
1msec 1 Tc = 25C Tj = 150C Single Pulse 1 10 100 10msec
4
0 0 40 80 120 160 Q G Total Gate Charge (nC)
0.1
1000
10000
VDS , Drain-toSource Voltage (V)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
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Document Number: 91208 S-81274-Rev. A, 16-Jun-08
IRFP22N60K, SiHFP22N60K
Vishay Siliconix
RD
25
VDS VGS D.U.T. + - VDD 10 V
20
RG
ID, Drain Current (A)
15
Pulse width 1 s Duty factor 0.1 %
Fig. 10a - Switching Time Test Circuit
10
VDS
5
90 %
0 25 50 75 100 125 150
TC, Case Temperature ( C)
10 % VGS td(on) tr td(off) tf
Fig. 9 - Maximum Drain Current vs. Case Temperature
1
Fig. 10b - Switching Time Waveforms
Thermal Response (ZthJC)
D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = 2. Peak T t1/ t 2 +T C 1
J = P DM x Z thJC
0.001 0.00001
0.0001
0.001
0.01
0.1
t1, Rectangular Pulse Duration (sec)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
15 V
tp
VDS
L
Driver
RG
20 V
D.U.T
IAS tp
+ - VDD
A
IAS
0.01
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
Document Number: 91208 S-81274-Rev. A, 16-Jun-08
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IRFP22N60K, SiHFP22N60K
Vishay Siliconix
800
ID
EAS, Single Pulse Avalanche Energy (mJ)
TOP BOTTOM
600
9.8A 14A 22A
400
200
0 25 50 75 100 125 150
Starting T J, Junction Temperature
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator Same type as D.U.T.
50 k
12 V
10 V QGS
QG
0.2 F
0.3 F
QGD D.U.T.
+ -
VDS
VG
VGS
3 mA
Charge
IG ID Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test Circuit
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Document Number: 91208 S-81274-Rev. A, 16-Jun-08
IRFP22N60K, SiHFP22N60K
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
D.U.T
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
+ +
-
RG
* * * *
dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current dI/dt D.U.T. VDS Waveform Diode Recovery dV/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91208.
Document Number: 91208 S-81274-Rev. A, 16-Jun-08
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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