 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| PRELIMINARY CYU01M16SFCU MoBL3TM 16-Mbit (1M x 16) Pseudo Static RAM Features * Wide voltage range: 1.7V-1.95V * Access Time: 70 ns * Ultra-low active power -- Typical active current: 3 mA @ f = 1 MHz -- Typical active current: 18mA @ f = fmax * Ultra low standby power * 16-word Page Mode * Automatic power-down when deselected * CMOS for optimum speed/power * Offered in a 48-ball BGA Package * Operating Temperature: -40C to +85C portable applications such as cellular telephones. The device can be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE1 HIGH or CE2 LOW), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH), or during a write operation (CE1 LOW and CE2 HIGH and WE LOW). Writing to the device is accomplished by taking Chip Enable (CE1 LOW and CE2 HIGH) and Write Enable (WE) input LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A19). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A19). Reading from the device is accomplished by taking Chip Enables (CE1 LOW and CE2 HIGH) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins will appear on I/O0 to I/O7. If Byte High Enable (BHE) is LOW, then data from memory will appear on I/O8 to I/O15. Refer to the truth table for a complete description of read and write modes. Functional Description[1] The CYU01M16SFCU is a high-performance CMOS Pseudo Static RAM organized as 1M words by 16 bits that supports an asynchronous memory interface. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery LifeTM (MoBL(R)) in Logic Block Diagram DATA IN DRIVERS A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 A18 A19 ROW DECODER 1M x 16 RAM Array SENSE AMPS I/O0-I/O7 I/O8-I/O15 COLUMN DECODER BHE WE OE BLE Pow er Down Circuit CE2 CE1 CE2 CE1 A7 A6 A5 A4 A3 A2 A1 A0 BHE BLE Note: 1. For best-practice recommendations, please refer to the Cypress application note "System Design Guidelines" on http://www.cypress.com. Cypress Semiconductor Corporation Document #: 38-05603 Rev. *B * 198 Champion Court * San Jose, CA 95134-1709 * 408-943-2600 Revised January 25, 2006 PRELIMINARY Pin Configuration[2, 3] 48-Ball VFBGA 1 BLE I/O8 I/O9 VSS VCC I/O14 I/O15 A18 CYU01M16SFCU MoBL3TM 2 OE BHE I/O10 I/O11 Top View 4 3 A0 A3 A5 A17 A1 A4 A6 A7 A16 A15 A13 A10 5 A2 CE1 I/O1 I/O3 I/O4 I/O5 WE A11 6 CE2 I/O0 I/O2 VCC VSS I/O6 I/O7 NC A B C D E F G H I/O12 NC I/O13 A19 A8 A14 A12 A9 Product Portfolio[4] Power Dissipation Product CYU01M16SFCU Min. 1.7 VCC Range (V) Typ.[4] 1.8 Max. 1.95 70 Speed (ns) Operating ICC (mA) f = 1MHz Typ.[4] 3 Max. 5 f = fmax Typ.[4] 18 Max. 25 Standby ISB2 (A) Typ.[4] 55 Max. 70 Power-up Characteristics The initialization sequence is shown in the figure below. Chip Select should be CE1 HIGH or CE2 LOW for at least 200 s after VCC has reached a stable value. No access must be attempted during this period of 200 s. Stable Power VCC First Access Tpu CE1 Parameter Tpu Description Chip Enable Low After Stable VCC Min. 200 Typ. Max. Unit s Notes: 2. Ball H6 and E3 can be used to upgrade to a 32-Mbit and a 64-Mbit density, respectively. 3. NC "no connect" - not connected internally to the die. 4. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC (typ) and TA = 25C. Tested initially and after design changes that may affect the parameters. Document #: 38-05603 Rev. *B Page 2 of 12 PRELIMINARY Page Mode This device can be operated in a page read mode. This is accomplished by initiating a normal read of the device. In order to operate the device in page mode, the upper order address bits should be fixed for four-word page access operation, all address bits except for A1 and A0 should be fixed until the page access is completed. For an eight-word page access, all address bits, except for A2, A1, and A0, Page Mode Feature Page Length Page Read Corresponding Addresses Page Read Start Address Page Direction CYU01M16SFCU MoBL3TM should be fixed. For a sixteen-word page mode all address bits, except for A3, A2, A1, and A0, should be fixed. The supported page lengths are four, eight, and sixteen words. Random page read is supported for all three four, eight, and sixteen-word page read options. Therefore, any address can be used as the starting address. Please refer to the table below for an overview of the page read modes. 8-Word Mode 8 words A2, A1, A0 Don't Care Don't Care 16-Word Mode 16 words A3, A2, A1, A0 Don't Care Don't Care 4-Word Mode 4 words A1, A0 Don't Care Don't Care Document #: 38-05603 Rev. *B Page 3 of 12 PRELIMINARY Maximum Ratings (Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature ................................. -65C to +150C Ambient Temperature with Power Applied............................................. -55C to +125C Supply Voltage to Ground Potential .-0.2V to VCCMAX + 0.3V DC Voltage Applied to Outputs in High Z State[5, 6, 7] ........................-0.2V to VCCMAX + 0.3V CYU01M16SFCU MoBL3TM DC Input Voltage[5, 6, 7] .................... -0.2V to VCCMAX + 0.3V Output Current into Outputs (LOW)............................. 20 mA Static Discharge Voltage.......................................... > 2001V (per MIL-STD-883, Method 3015) Latch-Up Current .................................................... > 200 mA Device Range Operating Temperature (TA) -40C to +85C VCC 1.7V to 1.95V CYU01M16SFCU Industrial DC Electrical Characteristics (Over the Operating Range) [5, 6, 7] CYU01M16SFCU-70 ns Parameter VCC VOH VOL VIH VIL IIX IOZ ICC Description Supply Voltage Output HIGH Voltage IOH = -0.1 mA VCC= 1.7V to 1.95V Output LOW Voltage IOL = 0.1 mA VCC= 1.7V to 1.95V Input HIGH Voltage Input LOW Voltage Input Leakage Current Output Leakage Current VCC Operating Supply Current Automatic CE Power-Down Current -- CMOS Inputs Automatic CE Power-Down Current -- CMOS Inputs VCC= 1.7V to 1.95V VCC= 1.7V to 1.95V GND < VIN < VCC GND < VOUT < VCC f = fMAX = 1/tRC f = 1MHz ISB1 CE1 > VCC - 0.2V, CE2 < 0.2V, VIN > VCC - 0.2V, VIN < 0.2V f = fMAX (Address and Data Only), f = 0 (OE, WE, BHE and BLE), VCC = 3.60V CE1 > VCC - 0.2V, CE2 < 0.2V VIN > VCC - 0.2V or VIN < 0.2V, f = 0, VCC=VCCMAX VCC= VCCmax IOUT = 0 mA CMOS levels 0.8 * VCC -0.2 -1 -1 18 Test Conditions Min. 1.7 VCC - 0.2 0.2 VCC + 0.3V 0.2 * VCC +1 +1 25 Typ.[4] 1.8 Max. 1.95 Unit V V V V V A A mA 3 55 5 70 mA A ISB2 55 70 A Capacitance[8] Parameter CIN COUT Description Input Capacitance Output Capacitance Test Conditions TA = 25C, f = 1 MHz, VCC = VCC(typ) Max. 8 8 Unit pF pF Thermal Resistance[8] Parameter JA JC Description Thermal Resistance (Junction to Ambient) Thermal Resistance (Junction to Case) Test Conditions Test conditions follow standard test methods and procedures for measuring thermal impedence, per EIA / JESD51. VFBGA 56 11 Unit C/W C/W Notes: 5. VIL(MIN) = -0.5V for pulse durations less than 20 ns. 6. VIH(Max) = VCC + 0.5V for pulse durations less than 20 ns. 7. Overshoot and undershoot specifications are characterized and are not 100% tested. 8. Tested initially and after any design or process changes that may affect these parameters. Document #: 38-05603 Rev. *B Page 4 of 12 PRELIMINARY AC Test Loads and Waveforms VCC OUTPUT R1 VCC GND 30 pF INCLUDING JIG AND SCOPE R2 10% CYU01M16SFCU MoBL3TM ALL INPUT PULSES 90% 90% 10% Fall Time = 1 V/ns Rise Time = 1 V/ns Equivalent to: THEVENIN EQUIVALENT RTH OUTPUT VTH Parameters R1 R2 RTH VTH 1.8V (VCC) 14000 14000 7000 0.90 Unit V Switching Characteristics Over the Operating Range[9, 10, 11, 15, 14] 70 ns Parameter Read Cycle tRC [13] tCD tAA tOHA tACE tDOE tLZOE tHZOE tLZCE tHZCE tDBE tLZBE tHZBE Read Cycle Time Chip Deselect Time CE1 = HIGH or CE2 = LOW, BLE/BHE High Pulse Time Address to Data Valid Data Hold from Address Change CE1 LOW and CE2 HIGH to Data Valid OE LOW to Data Valid OE LOW to Low Z [10, 11, 12] Description Min. 70 15 Max. 40000 Unit ns ns 70 5 70 35 5 25 10 25 70 5 25 [10, 11, 12] ns ns ns ns ns ns ns ns ns ns ns OE HIGH to High Z[10, 11, 12] CE1 LOW and CE2 HIGH to Low Z[10, 11, 12] CE1 HIGH and CE2 LOW to High Z BLE/BHE LOW to Data Valid BLE/BHE LOW to Low Z[10, 11, 12] BLE/BHE HIGH to High Z[10, 11, 12] Notes: 9. Test conditions for all parameters other than tri-state parameters assume signal transition time of 1 ns/V, timing reference levels of VCC(typ.)/2, input pulse levels of 0V to VCC, and output loading of the specified IOL/IOH as shown in the "AC Test Loads and Waveforms" section. 10. At any given temperature and voltage conditions tHZCE is less than tLZCE, tHZBE is less than tLZBE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device. All low-Z parameters will be measured with a load capacitance of 30 pF (3V). 11. tHZOE, tHZCE, tHZBE, and tHZWE transitions are measured when the outputs enter a high -impedence state. 12. High-Z and Low-Z parameters are characterized and are not 100% tested. 13. If invalid address signals shorter than min.tRC are continuously repeated for 40 s, the device needs a normal read timing (tRC) or needs to enter standby state at least once in every 40 s. 14. In order to achieve 70-ns performance, the read access must be Chip Enable (CE1 or CE2) controlled. That is, the addresses must be stable prior to Chip Enable going active. Document #: 38-05603 Rev. *B Page 5 of 12 PRELIMINARY Switching Characteristics Over the Operating Range[9, 10, 11, 15, 14] (continued) 70 ns Parameter Page Read Cycle tPC tPA Write Cycle tWC tSCE tAW tCD tHA tSA tPWE tBW tSD tHD tHZWE tLZWE [15] CYU01M16SFCU MoBL3TM Description Page Mode Read Cycle Time Page Mode Address Access Write Cycle Time CE1 LOW and CE2 HIGH to Write End Address Set-Up to Write End Chip Deselect Time CE1 = HIGH or CE2 = LOW, BLE/BHE High Pulse Time Address Hold from Write End Address Set-Up to Write Start WE Pulse Width BLE/BHE LOW to Write End Data Set-Up to Write End Data Hold from Write End WE LOW to High-Z[10, 11, 12] WE HIGH to Low-Z[10, 11, 12] Min. 35 Max. 40000 35 Unit ns ns ns ns ns ns ns ns ns ns ns ns 70 60 60 15 0 0 50 60 25 0 40000 25 10 ns ns Note: 15. The internal Write time of the memory is defined by the overlap of WE,CE1 = VIL or CE2 = VIH, BHE and/or BLE = VIL. All signals must be ACTIVE to initiate a write and any of these signals can terminate a write by going INACTIVE. The data input set-up and hold timing should be referenced to the edge of the signal that terminates the write. Document #: 38-05603 Rev. *B Page 6 of 12 PRELIMINARY Switching Waveforms Read Cycle 1 (Address Transition Controlled)[17, 18] tRC ADDRESS tOHA DATA OUT PREVIOUS DATA VALID tAA CYU01M16SFCU MoBL3TM DATA VALID Read Cycle 2 (OE Controlled)[16, 18,19] ADDRESS tRC CE1 tCD tHZCE CE2 tACE BHE/BLE tLZBE OE tDBE tHZBE tHZOE IMPEDANCE DATA OUT VCC SUPPLY CURRENT tLZOE HIGH IMPEDANCE tLZCE tDOE DATA VALID HIGH 50% 50% ICC ISB Notes: 16. Whenever CE 1 = HIGH or CE2 = LOW, BHE / BLE are taken inactive, they must remain inactive for a minimum of 5 ns. 17. Device is continuously selected. OE = CE1 = VIL and CE2 = VIH. 18. WE is HIGH for Read Cycle. 19. CE is the Logical AND of CE1 and CE2. Document #: 38-05603 Rev. *B Page 7 of 12 PRELIMINARY Switching Waveforms (continued) Page Read Cycle (WE = VIH, 16 word access)[13, 18, 19] t RC A4-A19 CYU01M16SFCU MoBL3TM tAA A0-A3 tOHA CE1 t ACE t PC CE2 OE t t HZBE DOE t HZCE BHE/BLE tDBE t LZCE DATA OUT High Z t PAA DATA VALID DATA VALID DATA VALID DATA VALID DATA VALID DATA VALID DATA VALID DATA VALID DATA VALID Write Cycle 1 (WE Controlled)[15, 12, 16, 19, 20, 21] t WC ADDRESS tSCE CE1 tCD CE2 tSA WE tAW tPWE tHA BHE/BLE tBW OE tSD DATA I/O DON'T CARE tHD VALID DATA tHZOE Notes: 20. Data I/O is high-impedance if OE > VIH. 21. During the DON'T CARE period in the DATA I/O waveform, the I/Os are in output state and input signals should not be applied. Document #: 38-05603 Rev. *B Page 8 of 12 PRELIMINARY Switching Waveforms (continued) Write Cycle 2 (CE1 or CE2 Controlled)[15, 12, 16, 20, 21] tWC ADDRESS tSCE CE1 CE2 tSA tAW tPWE CYU01M16SFCU MoBL3TM tHA WE tBW BHE/BLE OE tSD DATA I/O DON'T CARE tHD VALID DATA tHZOE Write Cycle 3 (WE Controlled, OE LOW)[ 16, 21] tWC ADDRESS tSCE CE1 CE2 BHE/BLE tBW tAW tHA tSA WE tPWE tSD DATAI/O DON'T CARE t HD VALID DATA tHZWE tLZWE Document #: 38-05603 Rev. *B Page 9 of 12 PRELIMINARY Switching Waveforms (continued) Write Cycle 4 (BHE/BLE Controlled, OE LOW)[15, 16, 20, 21] tWC ADDRESS CE1 CE2 tAW BHE/BLE tSA WE tBW CYU01M16SFCU MoBL3TM tSCE tHA tPWE tSD tHD DATA I/O DON'T CARE VALID DATA Truth Table[22] CE1 H X X L L L L L L L L L CE2 X L X H H H H H H H H H WE X X X H H H H H H L L L OE X X X L L L H H H X X X BHE X X H L H L L H L L H L BLE X X H L L H L L H L L H Inputs/Outputs High Z High Z High Z Data Out (I/O0-I/O15) Data Out (I/O0-I/O7); I/O8-I/O15 in High Z Data Out (I/O8-I/O15); I/O0-I/O7 in High Z High Z High Z High Z Data In (I/O0-I/O15) Data In (I/O0-I/O7); I/O8-I/O15 in High Z Data In (I/O8-I/O15); I/O0 -I/O7 in High Z Mode Deselect/Power-down Deselect/Power-down Deselect/Power-down Read Read Read Output Disabled Output Disabled Output Disabled Write (Upper Byte and Lower Byte) Write (Lower Byte Only) Write (Upper Byte Only) Power Standby (ISB) Standby (ISB) Standby (ISB) Active (ICC) Active (ICC) Active (ICC) Active (ICC) Active (ICC) Active (ICC) Active (ICC) Active (ICC) Active (ICC) Note: 22. H = Logic HIGH, L = Logic LOW, X = Don't Care. Document #: 38-05603 Rev. *B Page 10 of 12 PRELIMINARY Ordering Information Speed (ns) 70 Ordering Code CYU01M16SFCU-70BVXI Package Name BV48 Package Type CYU01M16SFCU MoBL3TM Operating Range Industrial 48-ball Fine Pitch VBGA (6 mm x 8 mm x 1 mm) (Pb-Free) Package Diagram 48-ball VFBGA (6 x 8 x 1 mm) BV48 BOTTOM VIEW A1 CORNER O0.05 M C O0.25 M C A B A1 CORNER O0.300.05(48X) 1 2 3 4 5 6 6 5 4 3 2 1 TOP VIEW A B C 8.000.10 8.000.10 0.75 5.25 D E F G H A B C D E 2.625 F G H A B 6.000.10 A 1.875 0.75 3.75 B 6.000.10 0.55 MAX. 0.25 C 0.15(4X) 0.210.05 0.10 C 51-85150-*D SEATING PLANE 0.26 MAX. C 1.00 MAX MoBL is a registered trademark and MoBL3 and More Battery Life are trademarks of Cypress Semiconductor Corporation. All product and company names mentioned in this document may be the trademarks of their respective holders. Document #: 38-05603 Rev. *B Page 11 of 12 (c) Cypress Semiconductor Corporation, 2006. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. PRELIMINARY Document History Page Document Title: CYU01M16SFCU MoBL3TM 16-Mbit (1M x 16) Pseudo Static RAM Document Number: 38-05603 REV. ** *A ECN NO. Issue Date 342199 386551 See ECN See ECN Orig. of Change PCI PCI New Datasheet CYU01M16SFCU MoBL3TM Description of Change Changed from Advance to Preliminary Replaced TBDs with appropriate values Changed tPC and tPA from 20 to 25 ns Corrected footnote # 16 as OE = CE1 = VIL and CE2 = VIH Added separate waveforms for CE1 and CE2 in Read #2, Page Read and Write#1 Timing diagram Removed the 55-ns Speed Bin Changed Isb2 Max value from 60 A to 70 A Added Isb1 to the DC parameters Added Chip Enable Access Foot Note to AC Parameters Changed the tCD Min value from 5 ns to 15 ns Changed the Page Mode Values (tPC and tPAA) from 25 ns to 35 ns *B 422623 See ECN HRT Document #: 38-05603 Rev. *B Page 12 of 12 |
Price & Availability of CYU01M16SFCU-70BVXI
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |