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| Ordering number : ENA1288 2SA2221/2SC6141 SANYO Semiconductors DATA SHEET 2SA2221/2SC6141 Applications * PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 230V / 15A, AF100W Output Applications 230V / 15A, AF100W output applications. Features * * * Large current capacitance. Wide ASO and high durability against breakdown. Adoption of MBIT process. Specifications ( ): 2SA2221 Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25C Conditions Ratings (--)250 (--)230 (--)6 (--)15 (--)30 3.5 170 150 --55 to +150 Unit V V V A A W W C C Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. www.semiconductor-sanyo.com/network 90308DA TI IM TC-00001593 No. A1288-1/4 2SA2221/2SC6141 Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Base-to-Emitter Voltage Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Symbol ICBO IEBO hFE1 hFE2 fT Cob VBE VCE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB=(--)250V, IE=0A VEB=(--)4V, IC=0A VCE=(--)5V, IC=(--)1A VCE=(--)5V, IC=(--)7.5A VCE=(--)5V, IC=(--)1A VCB=(--)10V, f=1MHz VCE=(--)5V, IC=(--)7.5A IC=(--)7.5A, IB=(--)0.75A IC=(--)5mA, IE=0A IC=(--)50mA, RBE= IE=(--)5mA, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. (--)250 (--)230 (--)6 (0.45)0.56 (1.75)3.3 (0.25)0.4 60 35 (10)15 (400)200 (--)1.5 (--0.3)0.2 (--)2.0 MHz pF V V V V V s s s Ratings min typ max (--)0.1 (--)0.1 160 Unit mA mA Package Dimensions unit : mm (typ) 7502-001 Switching Time Test Circuit PW=20s D.C.1% 20.0 6.0 3.3 5.0 INPUT 50 26.0 VR IB1 RB IB2 OUTPUT RL= 6.67 + 470F + 100F 1.0 1.0 2.0 20.7 3.4 1.2 1 2 3 2.0 2.0 1.0 1.0 0.6 VBE= --5V VCC=50V 10IB1= --10IB2=IC=7.5A For PNP, the polarity is reversed. 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PBL 5.45 5.45 2.8 --16 --14 IC -- VCE 2SA2221 16 IC -- VCE 2SC6141 Collector Current, IC -- A --12 --10 --8 Collector Current, IC -- A --300mA 500 m A 0 --50 mA --400mA 14 12 10 8 6 4 2 0 400 mA 300m A 200mA --200mA 100mA --100mA --6 --4 --2 0 --40mA --20mA IB=0mA 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 40mA 20mA IB=0mA 0 1 2 3 4 5 6 7 8 9 10 Collector-to-Emitter Voltage, VCE -- V IT02058 Collector-to-Emitter Voltage, VCE -- V IT02059 No. A1288-2/4 2SA2221/2SC6141 --16 --14 IC -- VBE 2SA2221 VCE= --5V Collector Current, IC -- A 16 14 12 10 8 6 4 2 0 IC -- VBE 2SC6141 VCE=5V Collector Current, IC -- A --12 --10 --8 --6 --4 --2 0 0C 25 --40 C C 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 0 0.2 0.4 Ta= 120 C 25C --40 C 0.6 0.8 1.0 Ta =1 2 1.2 1.4 IT02061 Base-to-Emitter Voltage, VBE -- V 3 2 IT02060 3 hFE -- IC Base-to-Emitter Voltage, VBE -- V hFE -- IC Ta=120C 25C 2SA2221 VCE= --5V DC Current Gain, hFE 2 Ta=120C 25C 2SC6141 VCE=5V DC Current Gain, hFE 100 7 5 100 7 5 --40C --40C 3 2 3 2 10 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 2 VCE(sat) -- IC 5 7 --10 2 IT02062 10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 2 VCE(sat) -- IC 5 7 10 2 IT02063 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 7 5 3 2 --0.1 7 5 3 2 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V --1.0 2SA2221 IC / IB=10 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0.01 2SC6141 IC / IB=10 --4 0 C = Ta = Ta 25 C --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 10 7 5 3 2 1.0 7 5 3 2 PC =1 ms s Collector Dissipation, PC -- W 7 5 3 2 Forward Bias A S O ICP=30A Collector Current, IC -- A 5 7 --10 2 IT02064 2 3 5 7 0.1 2 3 5 7 1.0 2 25 3 Collector Current, IC -- A 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 PC -- Ta 2SA2221 / 2SC6141 10 1m 2SA2221 / 2SC6141 IC=15A 70W No he at sin k 0.1 7 5 Tc=25C 3 Single Pulse 2 For PNP, the minus sign(--) is 0.01 2 3 5 7 10 2 1.0 omitted 3 5 7 100 2 3 IT13957 0 0 20 40 60 80 100 120 C 5 7 10 2 IT02065 140 --4 0 160 IT13958 1 C 20 12 C 0 Collector-to-Emitter Voltage, VCE -- V Ambient Temperature, Ta -- C No. A1288-3/4 C 10 DC s ion 0m erat op 2SA2221/2SC6141 200 PC -- Tc 2SA2221 / 2SC6141 Collector Dissipation, PC -- W 170 150 100 50 0 0 20 40 60 80 100 120 140 160 Case Temperature, Tc -- C IT13959 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of September, 2008. Specifications and information herein are subject to change without notice. PS No. A1288-4/4 |
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