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| 2N7002K Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 RDS(on) () 2 at VGS = 10 V ID (mA) 300 FEATURES * Low On-Resistance: 2 * Low Threshold: 2 V (typ.) * Low Input Capacitance: 25 pF * Fast Switching Speed: 25 ns * Low Input and Output Leakage * TrenchFET(R) Power MOSFET Pb-free Available RoHS* COMPLIANT * 2000 V ESD Protection BENEFITS TO-236 SOT-23 G 1 * Low Offset Voltage * Low-Voltage Operation * Easily Driven Without Buffer * High-Speed Circuits 3 D * Low Error Voltage S 2 APPLICATIONS Top View 2N7002K (7K)* * Marking Code * Direct Logic-Level Interface: TTL/CMOS * Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc. * Battery Operated Systems * Solid-State Relays Ordering Information: 2N7002K-T1 2N7002K-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 C)b Pulsed Drain Currenta TA = 25 C TA = 100 C TA = 25 C TA = 100 C Symbol VDS VGS ID IDM PD RthJA TJ, Tstg Limit 60 20 300 190 800 0.35 0.14 350 - 55 to 150 W C/W C mA Unit V Power Dissipationb Maximum Junction-to-Ambientb Operating Junction and Storage Temperature Range Notes: a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 board. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 71333 S-81469-Rev. C, 23-Jun-08 www.vishay.com 1 2N7002K Vishay Siliconix SPECIFICATIONS TA = 25 C, unless otherwise noted Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage VDS VGS(th) VGS = 0 V, ID = 10 A VDS = VGS, ID = 250 A VDS = 0 V, VGS = 20 V VDS = 0 V, VGS = 15 V Gate-Body Leakage IGSS VDS = 0 V, VGS = 10 V VDS = 0 V, VGS = 10 V, TJ = 85 C VDS = 0 V, VGS = 5 V VDS = 50 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 50 V, VGS = 0 V, TJ = 85 C VDS = 60 V, VGS = 0 V VDS = 60 V, VGS = 0 V , TJ = 125 C On-State Drain Currenta Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage Dynamica Total Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switchinga, b, c Turn-On Time Turn-Off Time td(on) td(off) VDD = 30 V, RL = 150 ID 200 mA, VGEN = 10 V, RG = 10 25 35 ns Qg Ciss Coss Crss VDS = 10 V, VGS = 4.5 V ID 250 mA VDS = 25 V, VGS = 0 V f = 1 MHz 0.4 30 6 2.5 pF 0.6 nC ID(on) RDS(on) gfs VSD VGS = 10 V, VDS = 7.5 V VGS = 4.5 V, VDS = 10 V VGS = 10 V, ID = 500 mA VGS = 4.5 V, ID = 200 mA VDS = 10 V, ID = 200 mA IS = 200 mA, VGS = 0 V 100 1.3 800 500 2 4 60 1 2.5 10 1 150 1000 100 10 100 1 500 A mA mS V nA V A Symbol Test Conditions Min. Typ.a Max. Unit Notes: a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW 300 s duty cycle 2 %. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71333 S-81469-Rev. C, 23-Jun-08 2N7002K Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 1.0 VGS = 10 V 0.8 I D - Drain Current (A) 7V 1200 6V TJ = - 55 C 5V I D - Drain Current (mA) 900 25 C 125 C 600 0.6 4V 0.4 300 0.2 3V 0.0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) 0 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) Output Characteristics 4.0 3.5 R DS(on) - On-Resistance () 32 3.0 2.5 2.0 1.5 1.0 8 0.5 0.0 0 200 400 600 800 1000 ID - Drain Current (mA) 0 0 5 VGS = 4.5 V VGS = 10 V C - Capacitance (pF) 24 40 Transfer Characteristics VGS = 0 V Ciss 16 Coss Crss 10 15 20 25 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 7 6 5 4 3 2 1 0 0.0 0.0 - 50 VDS = 10 V ID = 250 mA R DS(on) - On-Resistance 2.0 Capacitance VGS - Gate-to-Source Voltage (V) VGS = 10 V at 500 mA 1.6 (Normalized) 1.2 VGS = 4.5 V at 200 mA 0.8 0.4 0.1 0.2 0.3 0.4 0.5 0.6 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 71333 S-81469-Rev. C, 23-Jun-08 www.vishay.com 3 2N7002K Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 1000 VGS = 0 V R DS(on) - On-Resistance () 4 5 I S - Source Current (A) 100 TJ = 125 C 3 2 ID = 200 mA ID = 500 mA 10 TJ = 25 C 1 TJ = - 55 C 1 0.00 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) 0 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.4 3 2.5 ID = 250 A VGS(th) Variance (V) 0.0 Power (W) 2 On-Resistance vs. Gate-Source Voltage 0.2 - 0.2 1.5 - 0.4 1 TA = 25 C - 0.6 0.5 - 0.8 - 50 0 - 25 0 25 50 75 100 125 150 0.01 0.1 1 Time (s) 10 100 600 TJ - Junction Temperature (C) Threshold Voltage Variance Over Temperature 2 1 Duty Cycle = 0.5 Single Pulse Power, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 350 C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 71333 S-81469-Rev. C, 23-Jun-08 2N7002K Vishay Siliconix TYPICAL CHARACTERISTICS 2 1 Duty Cycle = 0.5 25 C, unless otherwise noted Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71333. Document Number: 71333 S-81469-Rev. C, 23-Jun-08 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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