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| SMD General Purpose Transistor (PNP) MMBT2907A SMD General Purpose Transistor (PNP) Features * PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications * RoHS compliance Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram SOT-23 Maximum Ratings (T Ambient=25C unless noted otherwise) Symbol Marking Code Description MMBT2907A 2F 60 60 5.0 600 250 200 500 150 -55 to +150 V V V mA mW MHz K/W C C Unit Conditions -VCEO -VCBO -VEBO -IC Collector-Emitter Voltage (Open Base) Collector-Base Voltage (Open Emitter) Emitter-Base Voltage (Open Collector) Collector Current (D.C) Power Dissipation above 25C Transition Frequency at f= 100MHz From junction to ambient in free air Junction Temperature Storage Temperature Range Ptot fT R j-a TJ TSTG -IC=50mA, -VCE=20V TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFA (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. A/AH 2007-10-11 Page 1 of 3 SMD General Purpose Transistor (PNP) MMBT2907A Electrical Characteristics (T Ambient=25C unless noted otherwise) Symbol Description Min. 75 100 Max. D.C. Current Gain 100 100 50 300 10 10 50 50 0.4 1.6 1.3 2.6 8.0 30 45 10 40 100 80 30 ns ns V V V MHz pF pF V nA A nA nA V Unit Conditions -VCE=10V, -IC=0.1mA -VCE=10V, -IC=1mA -VCE=10V, -IC=10mA -VCE=10V, -IC=150mA -VCE=10V, -IC=500mA -VCB=50V, IE=0 -VCB=50V, IE=0, Tj=125 C -VEB=0.5V, -VCE=30V -VEB=3V, -VCE=30V -IC=150mA, -IB=15mA -IC=500mA, -IB=50mA -IC=150mA, -IB=15mA -IC=500mA, -IB=50mA -IC=10mA, IB=0 -IC=10A, IE=0 -IE=10A, IC=0 -VCE=20V, -IC=50mA, f=100MHz -VCB=10V, f=1.0MHz, IE=0 -VEB=2.0V, f=1.0MHz, IC=0 -IB=15mA -IC=150mA -VCC=30V -IB=15mA -IC=150mA -VCC=6V hFE -ICBO -ICEX -IBEX -VCEsat -VBEsat -V(BR)CEO -V(BR)CBO -V(BR)EBO fT Co Ci ton td tr toff ts tf Collector Cut-Off Current Base Current with Reverse Biased Emitter Junction Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Current Gain-Bandwidth Product Output Capacitance Input Capacitance Turn on Time Delay Time Rise Time Turn-Off Time (ts + tf) Storage Time Fall Time 60 60 5.0 200 - Rev. A/AH 2007-10-11 www.taitroncomponents.com Page 2 of 3 SMD General Purpose Transistor (PNP) MMBT2907A Dimensions in mm SOT-23 How to contact us: US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 247-2232 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: taitron@taitroncomponents.com Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED REPRESENTACOES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAUDE - SAO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052 TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN' AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. A/AH 2007-10-11 www.taitroncomponents.com Page 3 of 3 |
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