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Bulletin I27255 09/06 IRKCS220/030P SCHOTTKY RECTIFIER Description/ Features The IRKCS220.. Schottky rectifier doubler module has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150C junction temperature. Typical applications are in high current switching power supplies, plating power supplies, UPS systems, converters, free-wheeling diodes, welding, and reverse battery protection. 150C TJ operation Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability UL pending TOTALLY LEAD-FREE, RoHS Compliant (3) (1) 220 Amp + (2) Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu baseplate allow an easier mounting on the majority of heatsink with increased tolerance of surface roughness and improve thermal spread. The Generation V of AAP module is manufactured without hard mold, eliminating in this way any possible direct stress on the leads. The electrical terminals are secured against axial pull-out: they are fixed to the module housing via a click-stop feature already tested and proved as reliable on other IR modules. Major Ratings and Characteristics Characteristics IF(AV) Rectangular waveform VRRM IFSM @ tp = 5 s sine VF TJ @ 110Apk, TJ=125C range Values 220 30 18000 0.42 - 55 to 150 Units A V A V C Outline TO-240AA www.irf.com 1 IRKCS220/030P Bulletin I27255 09/06 Voltage Ratings Parameters VR Max. DC Reverse Voltage (V) VRWM Max. Working Peak Reverse Voltage (V) IRKCS220/030P 30 Absolute Maximum Ratings Parameters IF(AV) Max. Average Forward Current IFSM EAS IAR Surge Current Non-Repetitive Avalanche Energy Repetitive Avalanche Current Per Module Per Leg Values Units 220 110 18000 2000 99 22 A mJ A A Conditions 50% duty cycle @ TC = 95 C, rectangular wave form 5s Sine or 3s Rect. pulse Following any rated load condition and with 10ms Sine or 6ms Rect. pulse rated VRRM applied TJ = 25 C, IAS = 15 Amps, L = 1mH Current decaying linearly to zero in 1 sec Frequency limited by TJ max. VA = 1.5 x VR typical Max. Peak One Cycle Non-Repetitive Electrical Specifications Parameters VFM Max. Forward Voltage Drop (1) Values Units 0.54 0.72 0.49 0.74 10 650 7400 7.0 10000 3500 V V V V mA mA pF nH V @ 110A @ 220A @ 110A @ 220A Conditions TJ = 25 C TJ = 125 C VR = rated VR IRM CT LS VINS Max. Reverse Leakage Current (1) Max. Junction Capacitance Typical Series Inductance RMS isolation voltage (1 sec) TJ = 25 C TJ = 125 C VR = 5VDC (test signal range 100Khz to 1Mhz) 25C From top of terminal hole to mounting plane 50 Hz, circuit to base, all terminals shorted (1) Pulse Width < 500s dv/dt Max. Voltage Rate of Change V/ s (Rated VR) Thermal-Mechanical Specifications Parameters TJ Tstg Max. Junction Temperature Range Max. Storage Temperature Range Values Units -55 to 150 -55 to 150 0.6 0.1 C C Conditions RthJC Max. Thermal Resistance, Junction to Case (Per Leg) RthCS Max. Thermal Resistance, case to Heatsink wt T Approximate Weight Mounting Torque 10% Case Style to heatsink busbar C/W DC operation C/W Mounting Surface, smooth and greased 110 (4) gr (oz) 5 Nm 4 TO - 240AA JEDEC 2 www.irf.com IRKCS220/030P Bulletin I27255 09/06 1000 Reverse Current - IR (mA) 10000 1000 100 10 1 0.1 0.01 0 5 10 15 20 25 Reverse Voltage - VR (V) 30 150C 125C 100C 75C 50C 25C Tj = 150C Instantaneous Forward Current - IF (A) 100 Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage 100 00 Junction Capacitance - CT (pF) 10 Tj = 125C T =2 5C J Tj = 25C 1 0.0 0.5 1.0 1.5 Forward Voltage Drop - VFM (V) Fig. 1 - Max. Forward Voltage Drop Characteristics 1 10 00 0 5 1 0 1 5 2 0 2 5 3 0 3 5 Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage Thermal Impedance ZthJC (C/W) D = 0.75 D = 0.5 0.1 D = 0.33 D = 0.25 D = 0.2 0.01 Single Pulse (Thermal Resistance) 0.001 1E-05 1E-04 1E-03 1E-02 1E-01 t1, Rectangular Pulse Duration (Seconds) 1E+00 1E+01 Fig. 4 - Max. Thermal Impedance ZthJC Characteristics www.irf.com 3 IRKCS220/030P Bulletin I27255 09/06 160 Allowable Case Temperature (C) Average Power Loss - (Watts) 100 Square wave (D=0.50) 80% rated Vr applied 140 120 100 80 60 40 20 0 0 50 100 see note (2) 80 DC 60 180 120 90 60 30 DC 40 20 0 150 200 250 300 0 20 40 60 80 100 120 140 160 Average Forward Current - IF(AV) (A) Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current Non-Repetitive Surge Current - IFSM (A) 100000 Average Forward Current - IF(AV) (A) Fig. 6 - Forward Power Loss Characteristics At Any Rated Load Condition And With Rated Vrrm Applied Following Surge 10000 1000 100 10 100 1000 10000 Square Wave Pulse Duration - tp (microsec) Fig. 7 - Max. Non-Repetitive Surge Current L HIGH-S PEED S CH WIT FREE-WHEEL DIODE 40HF L40S 02 Vd = 25 Volt DUT IR P460 F R = 25 ohm g + CURR ENT MONIT OR Fig. 8 - Unclamped Inductive Test Circuit (2) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR 4 www.irf.com IRKCS220/030P Bulletin I27255 09/06 Outline Table Dimensions are in millimeters and [inches] Ordering Information Table Device Code IR 1 1 2 3 4 5 6 7 KC 2 - S 3 22 4 9 5 / 030 6 P 7 International Rectifier Circuit Configuration KC = Add-A-Pak - 2 diodes/common cathode S = Schottky Diode Average Rating (x10) Product Silicon Identification Voltage Rating (030 = 30V) Lead-Free www.irf.com 5 IRKCS220/030P Bulletin I27255 09/06 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level and Lead-Free. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 09/06 6 www.irf.com |
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