 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| STGD7NB120S-1 N-CHANNEL 7A - 1200V - IPAK PowerMESHTM IGBT PRELIMINARY DATA TYPE STGD7NB120S-1 s s s s VCES 1200 V VCE(sat) < 2.1 V IC 7A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) VERY LOW ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT HIGH CURRENT CAPABILITY 3 2 1 DESCRIPTION IPAK Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH TM IGBTs, with outstanding performances. The suffix "S" identifies a family optimized achieve minimum on-voltage drop for low frequency applications (<1kHz). INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s MOTOR CONTROL s LIGHT DIMMER s INTRUSH CURRENT LIMITATION ABSOLUTE MAXIMUM RATINGS Symbol VCES VECR VGE IC IC ICM (s) PTOT Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Reverse Battery Protection Gate-Emitter Voltage Collector Current (continuos) at TC = 25C Collector Current (continuos) at TC = 100C Collector Current (pulsed) Total Dissipation at TC = 25C Derating Factor Storage Temperature Max. Operating Junction Temperature Value 1200 20 20 10 7 20 55 0.4 -65 to 150 150 Unit V V V A A A W W/C C C (q) Pulse width limited by safe operating area Aug 2000 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/6 STGD7NB120S-1 THERMAL DATA Rthj-case Rthj-amb Rthc-h Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-heatsink Typ 2.27 100 0.5 C/W C/W C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF Symbol VBR(CES) VBR(ECR) ICES IGES Parameter Collectro-Emitter Breakdown Voltage Emitter-Collectro Breakdown Voltage Collector cut-off (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Test Conditions IC = 250 A, VGE = 0 IC = 10mA, VGE = 0 VCE = Max Rating, TC = 25 C VCE = Max Rating, TC = 125 C VGE = 20V , VCE = 0 Min. 1200 20 50 250 100 Typ. Max. Unit V V A A nA ON (1) Symbol VGE(th) VGE Parameter Gate Threshold Voltage Gate Emitter Voltage Test Conditions VCE = VGE, IC = 250A VCE =2.5V, IC = 2A, Tj = 25/125C VGE = 15V, IC = 3.5 A VCE(sat) Collector-Emitter Saturation Voltage VGE = 15V, IC = 7 A VGE = 15V, IC = 10 A 1.7 Min. 3 Typ. Max. 5 6.5 1.6 2.1 Unit V V V V DYNAMIC Symbol gfs Cies Coes Cres Qg ICL Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Charge Latching Current VCE = 960V, IC = 7 A, VGE = 15V Vclamp = 960V , Tj = 150C RG = 1K 10 VCE = 25V, f = 1 MHz, VGE = 0 Test Conditions VCE = 25 V , IC =7 A Min. 2.5 Typ. 4.5 430 40 7 29 Max. Unit S pF pF pF nC A SWITCHING ON Symbol td(on) tr (di/dt)on Eon Parameter Turn-on Delay Time Rise Time Turn-on Current Slope Turn-on Switching Losses Test Conditions VCC = 960 V, IC = 7 A RG = 1K , VGE = 15 V VCC= 960 V, IC = 7 A, RG=1K VGE = 15 V, Tj = 125C Min. Typ. 570 270 800 3.2 Max. Unit ns ns A/s J 2/6 STGD7NB120S-1 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING OFF Symbol tc tr(Voff) tf Eoff(**) tc tr(Voff) tf Eoff(**) Parameter Cross-over Time Off Voltage Rise Time Fall Time Turn-off Switching Loss Cross-over Time Off Voltage Rise Time Fall Time Turn-off Switching Loss Vcc = 960 V, IC = 7 A, RGE = 1K , VGE = 15 V Tj = 125 C Vcc = 960 V, IC = 7 A, RGE = 1K , VGE = 15 V Test Conditions Min. Typ. 4.9 2.9 3.3 15 7.5 5.5 6.2 22 Max. Unit s s s mJ s s s mJ Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by max. junction temperature. (**)Losses include Also the Tail (Jedec Standardization) 3/6 STGD7NB120S-1 Fig. 1: Gate Charge test Circuit Fig. 2: Test Circuit For Inductive Load Switching 4/6 STGD7NB120S-1 TO-251 (IPAK) MECHANICAL DATA DIM. MIN. A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 0.45 0.48 6 6.4 4.4 15.9 9 0.8 0.8 0.3 0.95 0.6 0.6 6.2 6.6 4.6 16.3 9.4 1.2 1 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.031 2.2 0.9 0.7 0.64 5.2 mm TYP. MAX. 2.4 1.1 1.3 0.9 5.4 0.85 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.039 MIN. 0.086 0.035 0.027 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033 H A C C2 L2 D B3 B6 A1 L = = 3 B5 B A3 = B2 = G = E L1 1 2 = 0068771-E 5/6 STGD7NB120S-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 6/6 |
Price & Availability of STGD7NB120S-10008
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |