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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6807 Issued Date : 1998.08.12 Revised Date : 2004.09.07 Page No. : 1/4
HMBTA64
PNP SILICON TRANSISTOR
Description
The HMBTA64 is designed for application requiring extremely high current gain at collector current to 500mA. SOT-23
Features
* High D.C. Current Gain * For Complementary use with NPN Type HMBTA14
Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature........................................................................................................................... -55 ~ +150 C Junction Temperature................................................................................................................... +150 C Maximum * Maximum Power Dissipation Total Power Dissipation (TA=25C)............................................................................................................... 225 mW * Maximum Voltages and Currents (TA=25C) VCBO Collector to Base Voltage .......................................................................................................................... -30 V VCES Collector to Emitter Voltage ....................................................................................................................... -30 V VEBO Emitter to Base Voltage ............................................................................................................................. -10 V IC Collector Current ...................................................................................................................................... -500 mA
Electrical Characteristics (TA=25C)
Symbol BVCBO BVCES BVEBO ICBO IEBO *VCE(sat) VBE(on) *hFE1 *hFE2 fT Min. -30 -30 -10 10K 20K 125 Typ. Max. -100 -100 -1.5 -2 MHz Unit V V V nA nA V V IC=-100uA IC=-100uA IE=-10uA VCB=-30V VEB=-10V IC=-100mA, IB=-0.1mA IC=-100mA, VCE=-5V IC=-10mA, VCE=-5V IC=-100mA, VCE=-5V IC=-100mA, VCE=-5V, f=100MHz
*Pulse Test: Pulse Width 380us, Duty Cycle2%
Test Conditions
HMBTA64
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
100000 10000
Spec. No. : HE6807 Issued Date : 1998.08.12 Revised Date : 2004.09.07 Page No. : 2/4
Saturation Voltage & Collector Current
VCE=5V
10000
Saturation Voltage (mV)
hFE
1000 VCE(s at) @ IC=1000IB
1000 10 100 1000
100 1 10 100 1000
Collector Current (mA)
Collector Current (mA)
On Voltage & Collector Current
10 100
Capacitance & Reverse-Biased Voltage
On Voltage (mV)
Capacitance (Pf)
10
Cob
VBE(on) @ VCE=5V 1 1 10 100 1000 1 1 10 100
Collector Current (mA)
Reverse Biased Voltage (V)
Cutoff Frequency & IC
1000 10000
Safe Operating Area
PT=1ms
Cutoff Frequency (MHz)
1000
fT 100
Collector Current (mA)
PT=100ms 100 PT=1s
10
10 1 10 100 1000
1 1 10 100
Collector Current (mA)
Forward Voltage (V)
HMBTA64
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
SOT-23 Dimension
Marking:
A L
Spec. No. : HE6807 Issued Date : 1998.08.12 Revised Date : 2004.09.07 Page No. : 3/4
2
3
V
Pb Free Mark
Pb-Free: " " (Note) Normal: None
BS
1 2
Note: Pb-free product can distinguish by the green label or the extra description on the right side of the label. Pin Style: 1.Base 2.Emitter 3.Collector Material: * Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
V
G
DIM A B C D G H J K L S V
Min. 2.80 1.20 0.89 0.30 1.70 0.013 0.085 0.32 0.85 2.10 0.25
Max. 3.04 1.60 1.30 0.50 2.30 0.10 0.177 0.67 1.15 2.75 0.65
*: Typical, Unit: mm
C D H
3-Lead SOT-23 Plastic Surface Mounted Package HSMC Package Code: N
K
J
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
* Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931
HMBTA64
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMC's Products
1. Storage environment: Temperature=10oC~35oC Humidity=65%15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile
tP TP Ramp-up TL Tsmax Temperature tL
Spec. No. : HE6807 Issued Date : 1998.08.12 Revised Date : 2004.09.07 Page No. : 4/4
Critical Zone TL to TP
Tsmin tS Preheat
Ramp-down
25 t 25oC to Peak Time
Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices.
Sn-Pb Eutectic Assembly <3 C/sec 100oC 150oC 60~120 sec <3oC/sec 183oC 60~150 sec 240 C +0/-5 C 10~30 sec <6oC/sec <6 minutes
o o o
Pb-Free Assembly <3oC/sec 150oC 200oC 60~180 sec <3oC/sec 217oC 60~150 sec 260oC +0/-5oC 20~40 sec <6oC/sec <8 minutes
Peak temperature 245 C 5 C
o o
Dipping time 5sec 1sec 5sec 1sec
260 C +0/-5 C
o
o
HMBTA64
HSMC Product Specification

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