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| AOD4102 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD4102 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOD4102 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) =30V ID = 12 A (VGS = 10V) RDS(ON) < 37 m (VGS = 10V) RDS(ON) < 64 m (VGS = 4.5V) UIS Tested Rg,Ciss,Coss,Crss Tested TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C C Maximum 30 20 12 12 30 9 12 21 10 4.2 2.7 -55 to 175 Units V V A A mJ W W C TC=25C TC=100C ID IDM IAR EAR PD PDSM TJ, TSTG TC=25C Repetitive avalanche energy L=0.3mH Power Dissipation B Power Dissipation A TC=100C TA=25C TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B Symbol t 10s Steady-State Steady-State RJA RJC Typ 20 50 4.5 Max 30 60 7 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AOD4102 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=250uA, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS, ID=250A VGS=10V, VDS=5V VGS=10V, ID=12A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=7A Forward Transconductance VDS=5V, ID=10A IS=1A, VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125C 1 30 30 46 53 12 0.77 1 12 360 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 45 30 1 6.6 VGS=10V, VDS=15V, ID=12A 3.2 1.5 2.2 4.3 VGS=10V, VDS=15V, RL=1.2, RGEN=3 IF=12A, dI/dt=100A/s 10 12.8 3.2 14 6 1.5 64 37 1.8 Min 30 1 5 10 3 V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC A Typ Max Units V STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=12A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The Power dissipation P DSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev0: Oct 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOD4102 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 25 7V 20 ID (A) 15 VGS=4V 10 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 80 70 60 RDS(ON) (m) 50 40 30 20 10 0 0 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 5 0.8 -50 -25 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=10V Normalized On-Resistance VGS=4.5V 1.6 3.5V 3V 0 2 3 4 5 6 7 VGS(Volts) Figure 2: Transfer Characteristics 4.5V ID(A) 5V 20 15 10 25C 5 -40C 125C 10V 30 6V 25 VDS=5V -40C 25C 125C 1.4 VGS=10V, 12A 1.2 1 VGS=4.5V, 7A 120 ID=12A 1.0E+01 1.0E+00 90 RDS(ON) (m) 125C IS (A) 1.0E-01 125C 1.0E-02 1.0E-03 -40C 60 30 25C 25C 1.0E-04 1.0E-05 FUNCTIONS AND5RELIABILITY WITHOUT NOTICE. Rev0:July 2006 4 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. AOD4102 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 9 8 7 VGS (Volts) 6 5 4 3 2 1 0 0 1 3 4 5 6 Qg (nC) Figure 7: Gate-Charge Characteristics 2 7 0 0 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 5 25 VDS=15V ID=12A Capacitance (pF) 600 500 Ciss 400 300 200 100 Crss Coss 100.0 10s 10.0 ID (Amps) Power (W) DC 1.0 RDS(ON) limited TJ(Max)=175C TC=25C 100 1ms 100 80 60 40 20 0 0.0001 TJ(Max)=175C TA=25C 0.1 0.0 0.01 0.1 1 VDS (Volts) 10 100 0.001 0.01 0.1 1 10 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) 10 ZJC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=7C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0:July 2006 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. AOD4102 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 35 ID(A), Peak Avalanche Current 30 25 20 15 10 5 0 1.0E-07 TA=150C TA=25C Power Dissipation (W) 25 20 15 10 5 0 1.0E-06 1.0E-05 1.0E-04 1.0E-03 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note B) Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 15 12 Current rating ID(A) 9 6 3 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B) Power (W) 30 25 20 15 10 5 0 0.001 TA=25C 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 10 ZJA Normalized Transient Thermal Resistance 1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=60C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 0.01 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0:July 2006 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. |
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