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VDRM ITGQM ITSM V(T0) rT VDC-link
= = = = = =
5500 520 3.5x103 2.3 2.3 3300
V A A V m V
Reverse Conducting Integrated Gate-Commutated Thyristor
5SHX 06F6010
PRELIMINARY
Doc. No. 5SYA1222-05 Aug 07
* High snubberless turn-off rating * Optimized for medium frequency (<1 kHz) and low turn-off losses * High reliability * High electromagnetic immunity * Simple control interface with status feedback * AC or DC supply voltage * Suitable for series connection (contact factory)
Blocking
Maximum rated values Note 1
Parameter Repetitive peak off-state voltage Permanent DC voltage for 100 FIT failure rate of RC-GCT
Characteristic values
Symbol Conditions VDRM Gate Unit energized VDC-link Ambient cosmic radiation at sea level in open air. Gate Unit energized
min
typ
max 5500 3300
Unit V V
Parameter Repetitive peak off-state current
Symbol Conditions IDRM VD = VDRM, Gate Unit energized
min
typ
max 20
Unit mA
Mechanical data (see Fig. 20, 21)
Maximum rated values Note 1
Parameter Mounting force
Characteristic values
Symbol Conditions Fm Symbol Conditions Dp 0.1 mm H m Ds Da l h w Anode to Gate Anode to Gate 1.0 mm 1.0 mm 1.0 mm
min 14 min 26.0 33 13
typ 16 typ 47
max 18 max 26.5 1.01
Unit kN Unit mm mm kg mm mm
Parameter Pole-piece diameter Housing thickness Weight Surface creepage distance Air strike distance Length Height Width IGCT
296 47 208
mm mm mm
Note 1 Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SHX 06F6010
GCT Data
On-state (see Fig. 3 to 6, 23)
Maximum rated values Note 1
Parameter Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge on-state current Limiting load integral Max. peak non-repetitive surge on-state current Limiting load integral Critical rate of rise of onstate current
Characteristic values
Symbol Conditions IT(AV)M Half sine wave, TC = 85 C, Double side cooled IT(RMS) ITSM I2t ITSM I2t diT/dtcr For higher diT/dt and current lower than 30 A an external retrigger pulse is required. tp = 1 ms, Tj = 115 C, sine wave after surge: VD = VR = 0 V tp = 10 ms, Tj = 115 C, sine wave after surge: VD = VR = 0 V
min
typ
max 210 340 3.5x10
3
Unit A A A A2s A A2s A/s
61.3x10 8x10
3
3
32x10 TBD
3
Parameter On-state voltage Threshold voltage Slope resistance
Symbol Conditions VT IT = 520 A, Tj = 115 C V(T0) rT Tj = 115 C IT = 100...1000 A
min
typ
max 3.5 2.3 2.3
Unit V V m
Turn-on switching
Maximum rated values Note 1
(see Fig. 23, 25) Symbol Conditions diT/dtcr f = 500 Hz, Tj = 115 C, IT = 520 A, VD = 3300 V Symbol Conditions VD = 3300 V, Tj = 115 C tdon IT = 520 A, di/dt = VD / Li tdon SF Li = 17.5 H CCL = 0.5 F, LCL = 1 H tr Eon min typ max 190 Unit A/s
Parameter Critical rate of rise of onstate current
Characteristic values
Parameter Turn-on delay time Turn-on delay time status feedback Rise time Turn-on energy per pulse
min
typ
max 3 7 1 0.3
Unit s s s J
Turn-off switching (see Fig. 7, 8, 23, 25)
Maximum rated values Note 1
Parameter Max. controllable turn-off current Max. controllable turn-off current
Characteristic values
Symbol Conditions ITGQM VDM VDRM, Tj = 115 C, VD = 3300 V, RS = 3.5 , CCL = 0.5 F, LCL 1 H ITGQM VDM VDRM, Tj = 115 C, VD = 3900 V, RS = 3.5 , CCL = 0.5 F, LCL 1 H
min
typ
max 520
Unit A
260
A
Parameter Turn-off delay time Turn-off delay time status feedback Turn-off energy per pulse
Symbol Conditions VD = 3300 V, Tj = 115 C tdoff VDM VDRM, RS = 3.5 tdoff SF ITGQ = 520 A, Li = 17.5 H CCL = 0.5 F, LCL = 1 H, Eoff
min
typ
max 6 7 3
Unit s s J
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1222-05 Aug 07 page 2 of 13
5SHX 06F6010
Diode Data
On-state (see Fig. 9 to 12, 24, 25)
Maximum rated values Note 1
Parameter Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current Limiting load integral Max. peak non-repetitive surge current Limiting load integral
Characteristic values
Symbol Conditions IF(AV)M Half sine wave, TC = 85 C IF(RMS) IFSM I2t IFSM I2t Symbol Conditions VF IF = 520 A, Tvj = 115C V(F0) rF Tvj = 115C IF = 100...1000 A tp = 1 ms, Tvj = 115C, VR = 0 V tp = 10 ms, Tvj = 115C, VR = 0 V
min
typ
max 110 180 2.5x10
3
Unit A A A A2s A A2s Unit V V m
31.25x10 8x10
3 3
32x10 min typ max 6.3 3.3 5.8
3
Parameter On-state voltage Threshold voltage Slope resistance
Turn-on (see Fig. 24, 25)
Characteristic values
Parameter Peak forward recovery voltage
Symbol Conditions VFRM dIF/dt = 300 A/s, Tvj = 115C dIF/dt = 1400 A/s, Tvj = 115C
min
typ
max 80 250
Unit V V
Turn-off (see Fig. 13 to 17, 24, 25)
Maximum rated values Note 1
Parameter Symbol Conditions Max. decay rate of on-state di/dtcrit IFM = 520 A, Tvj = 115 C current VDClink = 3900 V
Characteristic values
min
typ
max 190
Unit A/s
Parameter Reverse recovery current Reverse recovery charge Turn-off energy
Symbol Conditions IFM = 520 A, VDC-Link = 3300 V IRM -dIF/dt = 190 A/s, LCL = 1 H Qrr CCL = 0.5 F, RS = 3.5 , Err Tvj = 115C, DCL = 5SDF 02D6004
min
typ
max 320 TBD 1.3
Unit A C J
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1222-05 Aug 07 page 3 of 13
5SHX 06F6010
Gate Unit Data
Power supply (see Fig. 18, 19)
Maximum rated values Note 1
Parameter Gate Unit voltage (Connector X1) Min. current needed to power up the Gate Unit
Characteristic values
Symbol Conditions VGIN,RMS AC square wave amplitude (15 kHz - 100kHz) or DC voltage. No galvanic isolation to power circuit. IGIN Min Rectified average current see application note 5SYA 2031
min 28
typ
max 40
Unit V
1.1 80 min typ max 7
A W Unit A
Gate Unit power consumption PGIN Max Parameter Internal current limitation Symbol Conditions IGIN Max Rectified average current limited by the Gate Unit
Optical control input/output 2) (see Fig. 23)
Maximum rated values Note 1
Parameter Min. on-time Min. off-time
Characteristic values
Symbol Conditions ton toff Symbol Conditions Pon CS CS: Command signal Poff CS SF: Status feedback Valid for 1mm plastic optical fiber P
on SF
min 40 40 min -15 -19
typ
max
Unit s s
Parameter Optical input power Optical noise power Optical output power Optical noise power Pulse width threshold External retrigger pulse width
typ
max -1 -45 -1 -50 400
Unit dBm dBm dBm dBm ns ns
Poff SF tretrig
(POF)
tGLITCH Max. pulse width without response 600
1100
2) Do not disconnect or connect fiber optic cables while light is on.
Connectors 2) (see Fig. 20 to 22)
Parameter Gate Unit power connector LWL receiver for command signal LWL transmitter for status feedback Symbol Description 3) X1 AMP: MTA-156, Part Number 641210-5 CS SF Avago, Type HFBR-2528 Avago, Type HFBR-1528
4) 4)
2) Do not disconnect or connect fiber optic cables while light is on. 3) AMP, www.amp.com 4) Avago Technologies, www.avagotech.com
Visual feedback (see Fig. 22)
Parameter Gate OFF Gate ON Fault Power supply voltage OK Symbol Description LED1 "Light" when GCT is off LED2 LED3 LED4 "Light" when gate-current is flowing "Light" when not ready / Failure "Light" when power supply is within specified range Color (green) (yellow) (red) (green)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1222-05 Aug 07 page 4 of 13
5SHX 06F6010
Thermal
Maximum rated values Note 1
Parameter Junction operating temperature Storage temperature range Ambient operational temperature
Characteristic values
Symbol Tvj Tstg Ta
Conditions
min 0 -40 0
typ
max 115 60 60
Unit C C C Unit K/kW K/kW K/kW K/kW
Parameter Symbol Thermal resistance junction-to-case Rth(jc) of GCT Thermal resistance case-toheatsink of GCT Thermal resistance junction-to-case of Diode Thermal resistance case-toheatsink of Diode Rth(ch) Rth(jc)
Conditions Double side cooled Diode not dissipating
min
typ
max 40 16 53 17
Double side cooled Rth(ch) GCT not dissipating
Analytical function for transient thermal impedance:
Z thJC (t) =
GCT
i Ri(K/kW) i(s) 1 25.096 0.5619
R (1 - e
i i =1
2 9.235 0.0721 3 3.727 0.0071
n
- t/
i
)
4
1.942 0.0020
Diode
i Ri(K/kW) i(s) 1 33.360 0.5623 2 12.255 0.0723 3 4.854 0.0072 4 2.537 0.0020 Fig. 1 Transient thermal impedance (junction-tocase) vs. time (max. values) Max. Turn-off current for Lifetime operation
* * *
calculated lifetime of on-board capacitors 20 years with slightly forced air cooling (air velocity > 0.5 m/s) strong air cooling allows for increased ambient temperature
Fig. 2 Max. turn-off current vs. frequency for lifetime operation
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1222-05 Aug 07 page 5 of 13
5SHX 06F6010
GCT Part
Max. on-state characteristic model: Max. on-state characteristic model:
VT25 = ATvj + BTvj IT + CTvj ln(IT + 1) + DTvj IT
A25 TBD
IT [A]
1200 Tj = 115C 1100 1000 900 800 700 600 500 400 300 200 100 0 2.4 3.2 4.0 4.8
VT115 = ATvj + BTvj IT + CTvj ln(IT + 1) + DTvj IT
Valid for iT = TBD - TBD A A115 TBD B115 TBD C115 TBD D115 TBD
Valid for iT = TBD - TBD A B25 C25 TBD TBD
D25 TBD
VT [V]
Fig. 3 GCT on-state voltage characteristics
Fig. 4 GCT on-state voltage characteristics
TBD
TBD
Fig. 5 GCT surge on-state current vs. pulse length, half-sine wave
Fig. 6 GCT surge on-state current vs. number of pulses, half-sine wave, 10 ms, 50Hz
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1222-05 Aug 07 page 6 of 13
5SHX 06F6010
Eoff [J]
3.5 Tj = 115C VD = 3300 V 3.0
2.5
2.0
1.5
1.0
0.5
0.0 0 100 200 300 400 500 600 ITGQ [A]
Fig. 7 GCT turn-off energy per pulse vs. turn-off current
Fig. 8 GCT Safe Operating Area
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1222-05 Aug 07 page 7 of 13
5SHX 06F6010
Diode Part
Max. on-state characteristic model: Max. on-state characteristic model:
VF25 = ATvj + BTvj IT + CTvj ln(IT + 1) + DTvj IT
A25 TBD
IF [A] 1200 Tj = 115C
VF115 = ATvj + BTvj IT + CTvj ln(IT + 1) + DTvj IT
Valid for IT = TBD - TBD A A115 TBD B115 TBD C115 TBD D115 TBD
Valid for IF = TBD - TBD A B25 C25 TBD TBD
D25 TBD
1000
800
600
400
200
0 3 4 5 6 7 8 9 10 VF [V]
Fig. 9 Diode on-state voltage characteristics
Fig. 10 Diode on-state voltage characteristics
TBD
TBD
Fig. 11 Diode surge on-state current vs. pulse length, half-sine wave
Fig. 12 Diode surge on-state current vs. number of pulses, half-sine wave, 10 ms, 50Hz
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1222-05 Aug 07 page 8 of 13
5SHX 06F6010
Err [J] 1.5
Tj = 115 C -diF /dt = 190 A/ s
1.0
VD = 3300V
TBD
0.5
0.0 0 100 200 300 400 500 600 IFGQ [A]
Fig. 13 Upper scatter range of diode turn-off energy per pulse vs. turn-off current
Fig. 14 Upper scatter range of diode turn-off energy per pulse vs decay rate of on-state current
Irr [A] Tj = 115C diF/dt = 190 A/s VD = 3300 V 320
TBD
280
240
200 0 90 180 270 360 450 540 IFQ [A]
Fig. 15 Upper scatter range of diode reverse recovery charge vs decay rate of on-state current
Fig. 16 Upper scatter range of diode reverse recovery current vs decay rate of on-state current
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1222-05 Aug 07 page 9 of 13
5SHX 06F6010
TBD
Fig. 17 Diode Safe Operating Area
Fig. 18 Max. Gate Unit input power in chopper mode
TBD
Fig. 19 Burst capability of Gate Unit
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1222-05 Aug 07 page 10 of 13
5SHX 06F6010
Fig. 20 Outline drawing; all dimensions are in millimeters and represent nominal values unless stated otherwise 1) VGIN (AC or DC+) 2) VGIN (AC or DC+) 3) Cathode 4) VGIN (AC or DC-) 5) VGIN (AC or DC-) Fig. 21 Detail A: pin out of supply connector X1.
RC-IGCT Gate Unit
Supply (VGIN)
RC-GCT
Anode
Internal Supply (No galvanic isolation to power circuit)
X1
LED1 LED2 LED3 LED4
TurnOn Circuit Rx Logic Monitoring
Gate
CS SF
Command Signal (Light)
Status Feedback (Light)
Tx
TurnOff Circuit
Cathode
Fig. 22 Block diagram
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1222-05 Aug 07 page 11 of 13
5SHX 06F6010
Turn-on
dIT/dt ITM VD 0.9 VD
External Retrigger pulse
VDSP IT
Turn-off
VDM VD
IT
0.4 ITGQ 0.1 VD VD
CS
CS
CS
SF tdon SF tdon tr
SF tretrig
SF tdoff SF tdoff
ton
toff
Fig. 23 General current and voltage waveforms with IGCT-specific symbols
VF(t), IF (t) dIF/dt VFR IF (t) -dIF/dt IF (t)
Qrr VF (t) tfr tfr (typ) 10 s IRM VR (t) VF (t) t
Fig. 24 General current and voltage waveforms with Diode-specific symbols
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1222-05 Aug 07 page 12 of 13
5SHX 06F6010
Li LCL
Rs
DCL
DUT
GCT - part
VDC
CCL DUT
Diode - part
LLoad
Fig. 25 Test circuit
Related documents:
5SYA 2031 5SYA 2032 5SYA 2036 5SYA 2046 5SYA 2048 5SYA 2051 5SZK 9107 Applying IGCT Gate Units Applying IGCTs Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors Failure rates of IGCTs due to cosmic rays Field measurements on High Power Press Pack Semiconductors Voltage ratings of high power semiconductors Specification of enviromental class for pressure contact IGCTs, OPERATION available on request, please contact factory
Please refer to http://www.abb.com/semiconductors for current version of documents.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors
Doc. No. 5SYA1222-05 Aug 07

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