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SUR2X60-02
Ultra Fast Recovery Epitaxial Diodes
Dimensions SOT-227(ISOTOP)
Dim. A B C D E F G H J K L M N O P Q Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 37.80 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 3.30 0.780 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.20 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 4.57 0.830 Inches Min. Max. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.489 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 0.130 19.81 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004 0.180 21.08
SUR2X60-02
VRSM V 200
VRRM V 200
R S T U V W
Symbol IFRMS IFAVM IFRM
Test Conditions TVJ=TVJM TC=85oC; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited by TVJM TVJ=45oC t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine
Maximum Ratings 100 71 800 950 1020 800 870 4500 4300 3200 3140 -40...+150 150 -40...+150
Unit A
IFSM
TVJ=150oC TVJ=45oC
A
I2t
TVJ=150oC
A2s
TVJ TVJM Tstg Ptot VISOL Md Weight TC=25oC 50/60Hz, RMS _ IISOL<1mA Mounting torque Terminal connection torque (M4)
o
C
150 2500 1.1-1.5/9-13 1.1-1.5/9-13 30
W V~ Nm/lb.in. g
SUR2X60-02
Ultra Fast Recovery Epitaxial Diodes
Symbol
Test Conditions TVJ=25oC; VR=VRRM TVJ=25oC; VR=0.8.VRRM TVJ=125oC; VR=0.8.VRRM IF=60A; TVJ=150oC TVJ=25oC For power-loss calculations only TVJ=TVJM
Characteristic Values typ. max. 50 40 11 0.88 1.08 0.7 3.0 0.8 0.05
Unit uA uA mA V V m K/W ns A
IR
VF VTO rT RthJC RthCK trr IRM
IF=1A; -di/dt=200A/us; VR=30V; TVJ=25oC _ VR=100V; IF=60A; -diF/dt=200A/us; L<0.05uH; TVJ=100 C
o
35 8
50 10
FEATURES
* International standard package miniBLOC (ISOTOP compatible) * Isolation voltage 2500 V~ * 2 independent FRED in 1 package * Planar passivatd chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour
APPLICATIONS
* Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating and melting * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders
ADVANTAGES
* High reliability circuit operation * Low voltage peaks for reduced protection circuits * Low noise switching * Low losses * Operating at lower temperature or space saving by reduced cooling
SUR2X60-02
Ultra Fast Recovery Epitaxial Diodes
160 A 140 Qr IF 120 100 80
TVJ=150C
0.8 C 0.6
TVJ= 100C VR = 100V
30
TVJ= 100C A V = 100V R 25
IRM
IF= 35A IF= 70A IF=140A
20 15 10
IF= 35A IF= 70A IF=140A
0.4
60
TVJ=100C
40 20
TVJ=25C
0.2 5 0.0 10 0 100 A/us 1000 -diF/dt 0 200 400 600 A/us 1000 800 -diF/dt
0 0.0
0.4
0.8 VF
1.2 V
Fig. 1 Forward current IF versus VF
Fig. 2 Typ. reverse recovery charge Qr versus -diF/dt
70 ns 60 trr 50 40
TVJ= 100C VR = 100V
Fig. 3 Typ. peak reverse current IRM versus -diF/dt
5 V VFR 4
tfr VFR
1.6 1.4 Kf 1.2 1.0 0.8 0.6 0.4 0.2 0 40 80 120 C 160 TVJ
Qr IRM
2.5 TVJ= 100C IF = 100A us 2.0 tfr
3
IF=35A IF=70A IF=140A
1.5
30 20
2
1.0
1 10 0 0 200 400 600 A/us -diF/dt 1000 0 0 200 400 600 diF/dt
0.5
0.0 800 A/us
Fig. 4 Dynamic parameters Qr, IRM versus TVJ
1 K/W
Fig. 5 Typ. recovery time trr versus -diF/dt
Fig. 6 Typ. peak forward voltage VFR and tfr versus diF/dt
ZthJC
0.1
Constants for ZthJC calculation: Rthi / (K/W) ti / (s) 0.1000 0.3400 0.3600 0.00014 0.00600 0.16500
0.01 0.0001
0.001
0.01
0.1
1 t
s
10
Fig. 7 Transient thermal impedance junction to case

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