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| VCE IC = = 6500 V 400 A ABB HiPakTM IGBT Module 5SNA 0400J650100 Doc. No. 5SYA 1592-01 Jun 07 * Low-loss, rugged SPT chip-set * Smooth switching SPT chip-set for good EMC * High insulation package * AlSiC base-plate for high power cycling capability * AlN substrate for low thermal resistance Maximum rated values Parameter Collector-emitter voltage DC collector current Peak collector current Gate-emitter voltage Total power dissipation DC forward current Peak forward current Surge current IGBT short circuit SOA Isolation voltage Junction temperature 1) Symbol VCES IC ICM VGES Ptot IF IFRM IFSM tpsc Visol Tvj Tvj(op) Tc Tstg Ms Conditions VGE = 0 V, Tvj 25 C Tc = 85 C tp = 1 ms, Tc = 85 C min max 6500 400 800 Unit V A A V W A A A s V C C C C Nm -20 Tc = 25 C, per switch (IGBT) 20 7350 400 800 VR = 0 V, Tvj = 125 C, tp = 10 ms, half-sinewave VCC = 4400 V, VCEM CHIP 6500 V VGE 15 V, Tvj 125 C 1 min, f = 50 Hz -40 -40 -40 Base-heatsink, M6 screws Main terminals, M8 screws Auxiliary terminals, M4 screws 4 8 2 4000 10 10200 125 125 125 125 6 10 3 Junction operating temperature Case temperature Storage temperature Mounting torques 1) 2) 2) Mt1 Mt2 Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 For detailed mounting instructions refer to ABB Document No. 5SYA2039 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SNA 0400J650100 IGBT characteristic values Parameter Collector (-emitter) breakdown voltage Collector-emitter 4) saturation voltage Collector cut-off current Gate leakage current Gate-emitter threshold voltage Gate charge Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time 3) Symbol V(BR)CES VCE sat ICES IGES VGE(TO) Qge Cies Coes Cres td(on) tr td(off) tf Conditions VGE = 0 V, IC = 10 mA, Tvj = 25 C IC = 400 A, VGE = 15 V VCE = 6500 V, VGE = 0 V Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C min 6500 typ max Unit V 4.2 5.4 35 -500 6 7.4 5.3 95.3 4.8 5.9 8 80 500 8 V V mA mA nA V C VCE = 0 V, VGE = 20 V, Tvj = 125 C IC = 160 mA, VCE = VGE, Tvj = 25 C IC = 400 A, VCE = 3600 V, VGE = -15 V .. 15 V VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 C VCC = 3600 V, IC = 400 A, RG = 5.6 , VGE = 15 V, L = 280 nH, inductive load VCC = 3600 V, IC = 400 A, RG = 5.6 , VGE = 15 V, L = 280 nH, inductive load VCC = 3600 V, IC = 400 A, VGE = 15 V, RG = 5.6 , L = 280 nH, inductive load VCC = 3600 V, IC = 400 A, VGE = 15 V, RG = 5.6 , L = 280 nH, inductive load Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C 4.41 0.85 700 630 250 220 1410 1700 650 980 2250 nF ns ns ns ns Turn-on switching energy Eon mJ 2800 1340 mJ 2120 1800 20 A nH m Turn-off switching energy Short circuit current Module stray inductance Resistance, terminal-chip 3) 4) Eoff ISC L CE RCC'+EE' tpsc 10 s, VGE = 15 V, Tvj = 125 C, VCC = 4400 V, VCEM CHIP 6500 V TC = 25 C TC = 125 C 0.1 0.15 Characteristic values according to IEC 60747 - 9 Collector-emitter saturation voltage is given at chip level ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1592-01 Jun 07 page 2 of 9 5SNA 0400J650100 Diode characteristic values Parameter Forward voltage 6) 5) Symbol VF Irr Qrr trr Erec Conditions IF = 400 A Tvj = 25 C Tvj = 125 C Tvj = 25 C VCC = 3600 V, IF = 400 A, VGE = 15 V, RG = 5.6 L = 280 nH inductive load Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C min typ 3.2 3.4 510 680 450 770 1840 2120 670 1380 max 3.8 4.0 Unit V A C ns mJ Reverse recovery current Recovered charge Reverse recovery time Reverse recovery energy 5) 6) Characteristic values according to IEC 60747 - 2 Forward voltage is given at chip level 7) Package properties Parameter IGBT thermal resistance junction to case Diode thermal resistance junction to case IGBT thermal resistance case to heatsink Diode thermal resistance case to heatsink Symbol Rth(j-c)IGBT Rth(j-c)DIODE 2) Conditions min typ max Unit 0.016 K/W 0.032 K/W 0.012 0.024 K/W K/W V 600 Rth(c-s)IGBT IGBT per switch, grease = 1W/m x K Rth(c-s)DIODE Diode per switch, grease = 1W/m x K Ve CTI f = 50 Hz, QPD 10pC (acc. to IEC 61287) 5100 7) Partial discharge extinction voltage Comparative tracking index 2) For detailed mounting instructions refer to ABB Document No. 5SYA2039 7) Mechanical properties Parameter Dimensions Clearance distance in air Surface creepage distance Mass 7) Symbol LW da ds m x x Conditions min x typ x max Unit mm mm mm H Typical , see outline drawing according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term: according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term: 130 140 48 40 26 64 56 1150 g Package and mechanical properties according to IEC 60747 - 15 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1592-01 Jun 07 page 3 of 9 5SNA 0400J650100 Electrical configuration C (5) C (3) C (7) G (2) E (1) E (4) E (6) Outline drawing 2) Note: all dimensions are shown in mm 2) For detailed mounting instructions refer to ABB Document No. 5SYA2039 This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX. This product has been designed and qualified for Industrial Level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1592-01 Jun 07 page 4 of 9 5SNA 0400J650100 800 700 600 500 IC [A] 400 300 200 100 VGE = 15V 800 VCE = 20 V 700 600 25 C 125 C IC [A] 500 400 300 25 C 200 100 0 0 1 2 3 4 VCE [V] 5 6 7 8 0 1 2 3 4 5 6 7 8 9 10 11 12 13 VGE [V] 125 C 0 Fig. 1 Typical on-state characteristics, chip level Fig. 2 Typical transfer characteristics, chip level 800 700 600 500 IC [A] 400 300 200 100 0 0 1 2 3 4 VCE [V] 5 6 7 8 9V Tvj = 25 C 800 700 600 500 IC [A] 400 300 200 100 Tvj = 125 C 0 0 1 2 3 4 5 VCE [V] 6 7 8 9 10 9V 17V 15V 17V 15V 13V 11V 13V 11V Fig. 3 Typical output characteristics, chip level Fig. 4 Typical output characteristics, chip level ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1592-01 Jun 07 page 5 of 9 5SNA 0400J650100 8 7 6 5 Eon, E off [J] E on, E off [J] VCC = 3600 V R G = 5.6 ohm VGE = 15 V Tvj = 125 C L = 280 nH 9 8 7 6 5 4 3 2 E off 1 E sw [J] = 6.8 x 10 -6 x I C2 + 8.5 x 10 -3 x I C + 0.451 VCC = 3600 V IC = 400 A VGE = 15 V Tvj = 125 C L = 280 nH E on 4 E on 3 E off 2 1 0 0 100 200 300 400 500 600 700 800 900 IC [A] 0 0 5 10 15 20 R G [ohm] 25 30 35 40 Fig. 5 Typical switching energies per pulse vs collector current Fig. 6 Typical switching energies per pulse vs gate resistor 10 VCC = 3600 V R G = 5.6 ohm VGE = 15 V Tvj = 125 C L = 280 nH td(on) , t r, t d(off) , t f [s] td(off) 1 tf td(on) t d(on) , t r, t d(off) , t f [s] 10 VCC = 3600 V IC = 400 A VGE = 15 V Tvj = 125 C L = 280 nH td(off) td(on) 1 tf tr tr 0.1 0 200 400 IC [A] 600 800 1000 0.1 0 5 10 15 20 R G [ohm] 25 30 35 40 Fig. 7 Typical switching times vs collector current Fig. 8 Typical switching times vs gate resistor ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1592-01 Jun 07 page 6 of 9 5SNA 0400J650100 1000 20 VGE = 0V f OSC = 1 MHz VOSC = 50 mV C ies VCC = 3600 V 15 100 10 C oes VGE [V] C [nF] 10 C res 1 5 IC = 400 A Tvj = 25 C 0.1 0 5 10 15 20 V CE [V] 25 30 35 0 0 1 2 Q g [C] 3 4 5 Fig. 9 Typical capacitances vs collector-emitter voltage Fig. 10 Typical gate charge characteristics 2.5 VCC 4400 V, Tvj = 125 C, VGE = 15 V R Goff = 5.6 ohm, L 280 nH 2 1.5 ICpulse / IC 1 0.5 Chip Module 0 0 1000 2000 3000 4000 VCE [V] 5000 6000 7000 Fig. 11 Turn-off safe operating area (RBSOA) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1592-01 Jun 07 page 7 of 9 5SNA 0400J650100 2000 1800 1600 Erec [mJ], I rr [A], Q rr [C] 1400 1200 1000 800 600 400 200 E rec [mJ] = -2.1 x 10 x I C + 3.58 x I C + 286 -3 2 1600 VCC = 3600 V R G = 5.6 ohm VGE = 15 V Tvj = 125 C L = 280 nH E rec 1400 1200 Erec [mJ], I rr [A], Q rr [C] 1000 800 600 R G = 39 ohm VCC = 3600 V IF = 400 A VGE = 15 V Tvj = 125 C L = 280 nH E rec Q rr Q rr Irr R G = 27 ohm R G = 5.6 ohm Irr 200 0 0 100 200 300 400 500 600 700 800 900 IF [A] 0 0.5 0 R G = 18 ohm 1 R G = 12 ohm 400 1.5 R G = 8.2 ohm 2 2.5 di/dt [kA/s] Fig. 12 Typical reverse recovery characteristics vs forward current Fig. 13 Typical reverse recovery characteristics vs di/dt 800 700 1000 VCC 4400 V di/dt 2500 A/s Tvj = 125 C L 280 nH 800 600 125 C 25 C 500 400 300 200 200 100 0 0 1 2 VF [V] 3 4 5 0 0 1000 2000 3000 IR [A] 400 IF [A] 600 4000 5000 6000 7000 VR [V] Fig. 14 Typical diode forward characteristics, chip level Fig. 15 Safe operating area diode (SOA) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1592-01 Jun 07 page 8 of 9 5SNA 0400J650100 0.1 Z th(j-c) Diode Analytical function for transient thermal impedance: Z th(j-c) [K/W] IGBT, DIODE 0.01 Z th(j-c) IGBT Z th (j-c) (t) = R i (1 - e -t/ i ) i =1 2 2.99 5.84 6.3 5.83 i 1 12.75 151 25.5 144 3 4 5 IGBT n Ri(K/kW) i(ms) Ri(K/kW) i(ms) 0.001 0.0001 0.001 0.01 0.1 t [s] 1 10 Fig. 16 Thermal impedance vs time For detailed information refer to: * 5SYA 2042-02 Failure rates of HiPak modules due to cosmic rays * 5SYA 2043-01 Load - cycle capability of HiPaks * 5SZK 9120-00 Specification of environmental class for HiPak ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors DIODE Doc. No. 5SYA 1592-01 Jun 07 |
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