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| VCE IC = = 1200 V 150 A IGBT-Die 5SMX 12M1273 Die size: 13.6 x 13.6 mm Doc. No. 5SYA1637-00 July 06 * Low loss thin IGBT die * Highly rugged SPT design * Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage DC collector current Peak collector current Gate-emitter voltage IGBT short circuit SOA Junction temperature 1) 1) Symbol Conditions VCES IC ICM VGES tpsc Tvj VCC = 900 V, VCEM 1200 V VGE 15 V, Tvj 125 C Limited by Tvjmax VGE = 0 V, Tvj 25 C min max 1200 150 300 Unit V A A V s C -20 20 10 -40 150 Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SMX 12M1273 IGBT characteristic values Parameter Collector (-emitter) breakdown voltage Collector-emitter saturation voltage Collector cut-off current Gate leakage current Gate-emitter threshold voltage Gate charge Input capacitance Output capacitance Reverse transfer capacitance Internal gate resistance Turn-on delay time Rise time Turn-off delay time Fall time 2) Symbol Conditions V(BR)CES VCE sat ICES IGES VGE(TO) Qge Cies Coes Cres RGint td(on) tr td(off) tf VCC = 600 V, IC = 150 A, RG = 8.2 , VGE = 15 V, L = 60 nH, inductive load VCC = 600 V, IC = 150 A, RG = 8.2 , VGE = 15 V, L = 60 nH, inductive load VCC = 600 V, IC = 150 A, VGE = 15 V, RG = 8.2 , L = 60 nH, inductive load, FWD: 3x 5SLX 12E1200 VCC = 600 V, IC = 150 A, VGE = 15 V, RG = 8.2 , L = 60 nH, inductive load Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C VGE = 0 V, IC = 1 mA, Tvj = 25 C IC = 150 A, VGE = 15 V VCE = 1200 V, VGE = 0 V Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C min 1200 1.9 typ max Unit V 2.15 2.4 2.4 100 V V A A nA V nC nF ns ns ns ns 500 -200 4.5 1110 10.9 0.72 0.46 3 170 200 75 85 410 510 50 60 14 200 6.5 VCE = 0 V, VGE = 20 V, Tvj = 125 C IC = 6 mA, VCE = VGE, Tvj = 25 C IC = 150 A, VCE = 600 V, VGE = -15 ..15 V VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 C Turn-on switching energy Eon mJ 21 10 mJ 15 620 A Turn-off switching energy Eoff Short circuit current 2) ISC tpsc 10 s, VGE = 15 V, Tvj = 125 C, VCC = 900 V, VCEM 1200 V Characteristic values according to IEC 60747 - 9 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1637-00 July 06 page 2 of 5 5SMX 12M1273 Mechanical properties Parameter Overall die L x W Dimensions exposed L x W (except gate pad) front metal gate pad thickness Metallization 3) 3) Unit 13.6 x 13.6 12.0 x 12.0 1.19 x 1.19 130 20 AlSi1 Al / Ti / Ni / Ag 4 1.8 mm mm mm m m m LxW front (E) back (C) For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033. Outline drawing G Emitter Note: all dimensions are shown in mm This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, Chap. IX. This product has been designed and qualified for Industrial Level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1637-00 July 06 page 3 of 5 5SMX 12M1273 300 300 VCE = 20 V 250 25 C 125 C 200 250 200 IC [A] IC [A] 150 150 100 100 125 C 50 VGE = 15 V 50 25 C 0 0 1 2 VCE [V] 3 4 0 0 1 2 3 4 5 6 VGE [V] 7 8 9 10 11 12 Fig. 1 Typical on-state characteristics Fig. 2 Typical transfer characteristics 0.08 0.07 0.06 0.05 Eon, Eoff [J] Eon, Eoff [J] VCC = 600 V RG = 8.2 ohm VGE = 15 V Tvj = 125 C L = 60 nH 0.07 VCC = 600 V IC = 150 A VGE = 15 V Tvj = 125 C L = 60 nH 0.06 0.05 0.04 Eon 0.04 0.03 0.02 0.01 0 0 50 100 150 IC [A] 200 250 300 Eon Eoff 0.03 0.02 Eoff 0.01 0 0 10 20 30 40 50 RG [ohm] Fig. 3 Typical switching characteristics vs collector current Fig. 4 Typical switching characteristics vs gate resistor ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1637-00 July 06 page 4 of 5 5SMX 12M1273 20 100 VCC = 600 V 15 VCC = 800 V 10 VGE = 0 V fOSC = 1 MHz VOSC = 50 mV Cies VGE [V] 10 C [nF] Coes 1 5 Cres IC = 150 A Tvj = 25 C 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Qg [C] 0.1 0 5 10 15 20 VCE [V] 25 30 35 Fig. 5 Typical gate charge characteristics Fig. 6 Typical capacitances vs collector-emitter voltage ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1637-00 July 06 |
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