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| v01.1201 MICROWAVE CORPORATION HMC414MS8G GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz Features Gain: 20 dB Saturated Power: +30 dBm 32% PAE Supply Voltage: +2.75V to +5.0 V Power Down Capability Low External Part Count 1 AMPLIFIERS - SMT Typical Applications This amplifier is ideal for use as a power amplifier for 2.2 - 2.7 GHz applications: * BLUETOOTH * MMDS Functional Diagram General Description The HMC414MS8G is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 2.2 and 2.8 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 20 dB of gain, +30 dBm of saturated power at 32% PAE from a +5.0V supply voltage. The amplifier can also operate with a 3.6V supply. Vpd can be used for full power down or RF output power/current control. Electrical Specifications, TA = +25 C, As a Function of Vs, Vpd = 3.6V Vs= 3.6V Parameter Min. Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) S a t u r a t e d O u t p u t Po w e r ( P s a t ) Output Third Order Intercept (IP3) Noise Figure Supply Current (I c c ) Control Current (Ipd) Vpd= 0V/3.6V 3 6 21 23 30 17 Typ. 2.2 - 2.8 20 0.03 8 9 25 27 35 6.5 0.002 / 240 7 25 0.04 3 6 23 26 35 17 Max. Min. Typ. 2.2 - 2.8 20 0.03 8 9 27 30 39 7.0 0.002 / 300 7 25 0.04 Max. Units GHz dB dB/ C dB dB dBm dBm dBm dB mA mA Vs= 5.0V 1 - 214 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at sales@hittite.com v01.1201 MICROWAVE CORPORATION HMC414MS8G GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz GaAs MMIC SUB-HARMONICALLY Gain vs. Temperature, Vs= -5.0V PUMPED MIXER 17 25 Gain vs. Temperature, Vs= 3.6V 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 FREQUENCY (GHz) 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 GHz 1 AMPLIFIERS - SMT 1 - 215 GAIN (dB) GAIN (dB) +25 C +85 C -40 C +25 C +85 C -40 C 2.9 3 2.8 2.9 3 FREQUENCY (GHz) Return Loss, Vs= 3.6V 0 -2 -4 S11 Return Loss, Vs= 5.0V 0 -2 -4 S11 S22 RETURN LOSS (dB) -6 -8 -10 -12 -14 -16 -18 -20 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 FREQUENCY (GHz) RETURN LOSS (dB) S22 -6 -8 -10 -12 -14 -16 -18 -20 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 FREQUENCY (GHz) P1dB vs. Temperature, Vs= 3.6V 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 FREQUENCY (GHz) P1dB vs. Temperature, Vs= 5.0V 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 FREQUENCY (GHz) P1dB (dBm) +25 C +85 C -40 C P1dB (dBm) +25 C +85 C -40 C 2.9 3 2.9 3 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at sales@hittite.com v01.1201 MICROWAVE CORPORATION HMC414MS8G GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz 1 AMPLIFIERS - SMT GaAs MMIC SUB-HARMONICALLY Psat vs. Temperature, Vs= - 25 PUMPED MIXER 17 5.0V Psat vs. Temperature, Vs= 3.6V 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 FREQUENCY (GHz) 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 GHz Psat (dBm) +25 C +85 C -40 C Psat (dBm) +25 C +85 C -40 C 2.9 3 2.8 2.9 3 FREQUENCY (GHz) Power Compression@ 2.4 GHz, Vs= 3.6V 34 32 30 Pout (dBm) 28 Gain (dB) 26 PAE (%) 24 22 20 18 16 14 12 10 8 6 4 2 0 -14 -12 -10 -8 -6 -4 -2 0 Power Compression@ 2.4 GHz, Vs= 5.0V 34 32 30 Pout 28 Gain 26 PAE 24 22 20 18 16 14 12 10 8 6 4 2 0 -14 -12 -10 -8 -6 -4 -2 Pout (dBm), GAIN (dB), PAE (%) 2 4 6 8 10 12 14 16 Pout (dBm), GAIN (dB), PAE (%) 0 2 4 6 8 10 12 14 16 INPUT POWER (dBm) INPUT POWER (dBm) Output IP3 vs. Temperature, Vs= 3.6V 42 40 38 36 34 32 30 28 26 24 22 20 18 16 14 12 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 FREQUENCY (GHz) Output IP3 vs. Temperature, Vs= 5.0V 42 40 38 36 34 32 30 28 26 24 22 20 18 16 14 12 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 FREQUENCY (GHz) OIP3 (dBm) +25 C +85 C -40 C OIP3 (dBm) +25 C +85 C -40 C 2.9 3 2.9 3 1 - 216 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at sales@hittite.com v01.1201 MICROWAVE CORPORATION HMC414MS8G GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz Reverse Isolation GaAs MMIC SUB-HARMONICALLY Power DownMIXER 17 - 3.6V PUMPED Isolation, Vs= 25 vs. Temperature, Vs= 3.6V 0 -5 -10 +25 C +85 C -40 C GHz 0 -10 1 AMPLIFIERS - SMT 1 - 217 ISOLATION (dB) ISOLATION (dB) -15 -20 -25 -30 -35 -40 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 FREQUENCY (GHz) -20 -30 -40 -50 -60 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 FREQUENCY (GHz) Noise Figure vs. Temperature, Vs= 3.6V 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 FREQUENCY (GHz) Noise Figure vs. Temperature, Vs= 5.0V 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 FREQUENCY (GHz) +25 C +25 C +85 C -40 C NOISE FIGURE (dB) 2.9 3 NOISE FIGURE (dB) +85 C -40 C 2.9 3 Gain & Power vs. Supply voltage 28 27 26 25 Gain 34 32 30 28 26 24 P1dB Psat P1dB, Psat (dBm) GAIN dB) 24 23 22 21 20 19 18 2.75 3.25 3.75 4.25 4.75 22 20 18 16 14 5.25 Vcc SUPPLY VOLTAGE (Vdc) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at sales@hittite.com v01.1201 MICROWAVE CORPORATION HMC414MS8G GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz 1 AMPLIFIERS - SMT Absolute Maximum Ratings Supply Voltage (Vcc) Control Voltage (Vpd) Input Power (RFin) Channel Temperature (Tc) Continuous Pdiss (T= 85 C) (derate 27 mW/C above 85 C) Storage Temperature Operating Temperature +5.5 Vdc +4.0 Vdc +20 dBm 150 C 1.73 W -65 to +150 C -40 to +85 C Pin Locations & Outline Drawing 1. MATERIAL: A. PACKAGE BODY - LOW STRESS INJECTION-MOLDED PLASTIC, SILICA & SILICONE INPREGNATED. B. LEADFRAME MATERIAL: COPPER ALLOY 2. PLATING: LEAD-TIN SOLDER PLATE 3. DIMENSIONS ARE IN INCHES (MILLIMETERS) 4. CHARACTERS TO BE HELVETICA MEDIUM, .030 HIGH USING WHITE INK, LOCATED APPROX AS SHOWN 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 1 - 218 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at sales@hittite.com v01.1201 MICROWAVE CORPORATION HMC414MS8G GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz Pin Descriptions Pin Number Function Description Interface Schematic 1 AMPLIFIERS - SMT 1 - 219 1 RF IN This pin is AC coupled and matched to 50 Ohms from 2.2 to 2.8 GHz. 2 NC Not Connected 3, 4 RF OUT RF output and DC bias for the output stage. 5 GND Ground: Backside of package has exposed metal ground slug that must be connected to ground thru a shor t path. Vias under the device are required. 6, 8 Vpd1, Vpd2 Power control pin. For maximum power, this pin should be connected to 3.6V. For 5V operation, a dropping resistor is required. A higher voltage is not recommended. For lower idle current, this voltage can be reduced. 7 Vcc Power supply voltage for the first amplifier stage. An external bypass capacitor of 330 pF is required as shown in the application schematic. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at sales@hittite.com v01.1201 MICROWAVE CORPORATION HMC414MS8G GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz 1 AMPLIFIERS - SMT Evaluation PCB for HMC414MS8G * For 5V operation on Vctl line, select R1, R2 such that 3.6V is presented on Pins 6 and 8. The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. List of Material Item J1 - J2 J3 C1 C2 C3 - C6 C7 L1 U1 PCB* Description PC Mount SMA RF Connector 2 mm DC Header 2.7 pF Capacitor, 0603 Pkg. 100 pF Capacitor, 0402 Pkg. 330 pF Capacitor, 0603 Pkg. 2.2 F Capacitor, Tantalum 18nH Inductor 0603 Pkg. HMC414MS8G Amplifier 105074 Eval Board * Circuit Board Material: Rogers 4350 1 - 220 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at sales@hittite.com v01.1201 MICROWAVE CORPORATION HMC414MS8G GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz HMC414MS8G Application Circuit 1 AMPLIFIERS - SMT TL1 Impedance Length 50 Ohm 0.036" TL2 50 Ohm 0.3" TL3 50 Ohm 0.11" * For 5V operation on Vctl line, select R1, R2 such that 3.6V is presented on Pins 6 and 8. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at sales@hittite.com 1 - 221 |
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