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| BTB/BTA06 Discrete Triacs(Non-Isolated/Isolated) Dimensions TO-220AB Dim. A B C D E F G H J K M N Q R Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 G T2 T1 T2 G T1 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit IT(RMS) RMS on-state current (full sine wave) TO-22 0AB Tc = 100 C 6 A ITSM It dI/dt IGM PG(AV) Tstg Tj Non repetitive surge peak on-state current (full cycle, Tj initial = 25C) It Value for fusing Critical rate of rise of on-state current _ I G = 2 x I GT , tr < 100 ns Peak gate current Average gate p ower diss ipation Storage junction temperature range Operating junction temperature range F = 60 Hz F = 50 Hz t = 16.7 ms t = 20 ms 63 60 21 A As A/s A W C tp = 10 ms F = 120 Hz tp = 20 s Tj = 125C Tj = 125C Tj = 125C 50 4 1 - 40 to + 150 - 40 to + 125 s ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified) SNUBBERLESSTM and LOGIC LEVEL(3 Quadrants) Symbol Test Conditions Quadrant CW IGT (1) VGT VGD IH (2) IL dV/dt (2) VD = 12 V VD = VDRM IT = 100 mA IG = 1.2 IGT VD = 67 % VDRM gate open Tj = 125C Tj = 125C I - III II MIN. MIN. (dI/dt)c (2) Without snubber RL = 30 RL = 3.3 k Tj = 125C I - II - III I - II - III I - II - III MAX. MAX. MIN. MAX. MAX. 35 50 60 400 3.5 35 1.3 0.2 50 70 80 1000 5.3 V/s A/ms BTA/BTB BW 50 mA V V mA mA Unit BTB/BTA06 Discrete Triacs(Non-Isolated/Isolated) s STANDARD (4 Quadrants) Symbol IGT (1) VD = 12 V VGT VGD IH (2) IL VD = VDRM IT = 500 mA IG = 1.2 IGT I - III - IV II RL = 3.3 Tj = 125C Test Conditions RL = 30 Quadrant I - II - III IV ALL ALL MAX. MAX. MIN. MAX. MAX. MIN. MIN. Value 50 100 1.3 0.2 50 50 100 400 10 V/s V/s Unit mA V V mA mA dV/dt (2) VD = 67 % VDRM gate open Tj = 125C (dV/dt)c (2) (dI/dt)c =2.7 A/ms Tj = 125C STATIC CHARACTERISTICS Symbol VTM (2) Vto (2) Rd (2) IDRM IRRM Note 1: minimum IGT is guaranted at 5% of IGT max. Note 2: for both polarities of A2 referenced to A1 Test Conditions ITM = 5.5 A tp = 380 s Tj = 25C Tj = 125C Tj = 125C Tj = 25C Tj = 125C MAX. MAX. MAX. MAX. Value 1.55 0.85 60 5 1 Unit V V m A mA Threshold voltage Dynamic resistance VDRM = VRRM THERMAL RESISTANCES Symbol Rth(j-c) Rth(j-a) Junction to case (AC) Junction to ambient Parameter Value 1.8 60 Unit C/W C/W PRODUCT SELECTOR Voltage (xxx) Part Number 200 V ~~ 1000 V BTB/BTA06 X X 50 mA Standard TO-220AB Sensitivity Type Package OTHER INFORMATION Part Number BTB/BTA06 Marking BTB/BTA06 Weight 2.3 g Base quantity 250 Packing mode Bulk BTB/BTA06 Discrete Triacs(Non-Isolated/Isolated) F ig. 1 Maximum power dis s ipation vers us R MS : on-s ta te current (full cycle). P (W) 8 7 6 5 4 3 2 1 0 0 1 2 IT (R MS )(A ) F ig. : 2 R MS on-state current vers us cas e temperature (full cycle). IT (R MS ) (A ) 7 6 5 4 3 2 1 T c (C ) B TA BTB 3 4 5 6 0 0 25 50 75 100 125 F ig. :3 R elative variation of thermal impeda nce versus pulse duration. K =[Zth/R th] 1E +0 Zth(j-c) F ig. : 4On-s tate values ). IT M (A ) 100 T j max. V to = 0.85 V R d = 60 m cha racteris tics (maximum T j=T j max 1E -1 Zth(j-a) 10 1E -2 1E -3 tp(s ) 1E -2 1E -1 1E +0 1E +1 1E +2 5E +2 V T M(V ) 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 F ig. : 5 S urge peak on-state current vers us number of cycles . F ig. : 6 Non-repetitive s urge pea k on-s tate current for a s inus oidal puls e with width tp < 10ms, and corres ponding value of It. IT S M (A ),I (A ) t s 1000 T j initial=25C IT S M (A ) 70 60 50 40 30 20 10 0 1 R epetitive T c=105C Non repetitive T j initial=25C t=20ms One cycle dI/dt limitation: 50A /s IT S M 100 It Number of ycles c tp (ms ) 10 100 1000 10 0.01 0.10 1.00 10.00 BTB/BTA06 Discrete Triacs(Non-Isolated/Isolated) F ig. 7 R ela tive variation of gate trigger current, : holding current and latching current vers us junction temperature (typical values). IG T,IH,IL [T j] / IG,IH,IL [T j=25C ] T 2.5 2.0 IG T F ig. -1: R elative variation of critical rate of 8 decreas e of main current vers us (dV /dt)c (typical values ). S nubberles s & Logic Level Types (dI/dt)c [(dV /dt)c ] / S pec ified (dI/dt)c 2.4 2.2 2.0 1.8 1.6 1.4 S W 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.1 1.5 1.0 0.5 T j(C ) IH & IL TW B W/C W (dV /dt)c (V /s ) 0.0 -40 -20 0 20 40 60 80 100 120 140 1.0 10.0 100.0 F ig. -2: R elative variation of critical rate of 8 decreas e of main current vers us (dV /dt)c (typica l values ). S tandard Types (dI/dt)c [(dV /dt)c ] / S pec ified (dI/dt)c 2.0 1.8 C 1.6 1.4 B 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.1 F ig. : 9 R elative variation of critical rate of decreas e of main current vers us junction temperature. (dI/dt)c [T j] / (dI/dt)c [T j s pec ified] 6 5 4 3 2 (dV /dt)c (V /s ) 1 10.0 100.0 T j(C ) 1.0 0 0 25 50 75 100 125 |
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