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| VCE IC = = 3300 V 1500 A ABB HiPakTM IGBT Module 5SNA 1500E330300 Doc. No. 5SYA 1595-00 July 07 * Ultra low-loss, rugged SPT+ chip-set * Smooth switching SPT+ chip-set for good EMC * Industry standard package * High power density * AlSiC base-plate for high power cycling capability * AlN substrate for low thermal resistance Maximum rated values Parameter Collector-emitter voltage DC collector current Peak collector current Gate-emitter voltage Total power dissipation DC forward current Peak forward current Surge current IGBT short circuit SOA Isolation voltage Junction temperature Junction operating temperature Case temperature Storage temperature Mounting torques 1) 2) 2) 1) Symbol VCES IC ICM VGES Ptot IF IFRM IFSM tpsc Visol Tvj Tvj(op) Tc Tstg Ms Mt1 Mt2 Conditions VGE = 0 V Tc = 85 C tp = 1 ms, Tc = 85 C min max 3300 1500 3000 Unit V A A V W A A A s V C C C C Nm -20 Tc = 25 C, per switch (IGBT) 20 11750 1500 3000 VR = 0 V, Tvj = 125 C, tp = 10 ms, half-sinewave VCC = 2500 V, VCEM CHIP 3300 V VGE 15 V, Tvj 125 C 1 min, f = 50 Hz -40 -40 -40 Base-heatsink, M6 screws Main terminals, M8 screws Auxiliary terminals, M4 screws 4 8 2 14000 10 6000 150 125 125 125 6 10 3 Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 For detailed mounting instructions refer to ABB Document No. 5SYA2039 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SNA 1500E330300 IGBT characteristic values Parameter Collector (-emitter) breakdown voltage Collector-emitter 4) saturation voltage Collector cut-off current Gate leakage current Gate-emitter threshold voltage Gate charge Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time 3) Symbol V(BR)CES VCE sat ICES IGES VGE(TO) Qge Cies Coes Cres td(on) tr td(off) tf Conditions VGE = 0 V, IC = 10 mA, Tvj = 25 C IC = 1500 A, VGE = 15 V VCE = 3300 V, VGE = 0 V Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C min 3300 typ max Unit V 2.4 3.0 3.4 12 120 -500 4.5 11.0 152 500 6.5 V V mA mA nA V C VCE = 0 V, VGE = 20 V, Tvj = 125 C IC = 240 mA, VCE = VGE, Tvj = 25 C IC = 1500 A, VCE = 1800 V, VGE = -15 V .. 15 V VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 C VCC = 1800 V, IC = 1500 A, RG = 1.0 , CGE = 220 nF, VGE = 15 V, L = 100 nH, inductive load VCC = 1800 V, IC = 1500 A, RG = 1.5 , CGE = 220 nF, VGE = 15 V, L = 100 nH, inductive load VCC = 1800 V, IC = 1500 A, RG = 1.0 , CGE = 220 nF, VGE = 15 V, L = 100 nH, inductive load Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C 12.2 3.77 600 570 220 250 1480 1680 380 470 1380 nF ns ns ns ns Turn-on switching energy Eon mJ Tvj = 125 C 2000 Turn-off switching energy Eoff VCC = 1800 V, IC = 1500 A, RG = 1.5 , CGE = 220 nF, VGE = 15 V, L = 100 nH, inductive load Tvj = 25 C 1940 mJ Tvj = 125 C 2680 Short circuit current Module stray inductance Resistance, terminal-chip 3) 4) ISC L CE RCC'+EE' tpsc 10 s, VGE = 15 V, Tvj = 125 C, VCC = 2500 V, VCEM CHIP 3300 V TC = 25 C TC = 125 C 6500 10 0.06 0.085 A nH m Characteristic values according to IEC 60747 - 9 Collector-emitter saturation voltage is given at chip level ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1595-00 July 07 page 2 of 9 5SNA 1500E330300 Diode characteristic values Parameter Forward voltage 6) 5) Symbol VF Irr Qrr trr Erec Conditions IF = 1500 A Tvj = 25 C Tvj = 125 C Tvj = 25 C VCC = 1800 V, IF = 1500 A, VGE = 15 V, RG = 1.0 , CGE = 220 nF, L = 100 nH inductive load Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C min typ 2.0 2.1 1850 2100 960 1590 750 1160 1200 2030 max 2.55 Unit V A C ns mJ Reverse recovery current Recovered charge Reverse recovery time Reverse recovery energy 5) 6) Characteristic values according to IEC 60747 - 2 Forward voltage is given at chip level Thermal properties Parameter IGBT thermal resistance junction to case 7) Symbol Rth(j-c)IGBT Rth(j-c)DIODE 2) Conditions min typ max Unit 0.0085 K/W 0.017 K/W 0.009 0.018 K/W K/W Diode thermal resistance junction to case IGBT thermal resistance case to heatsink Diode thermal resistance case to heatsink 2) Rth(c-s)IGBT IGBT per switch, grease = 1W/m x K Rth(c-s)DIODE Diode per switch, grease = 1W/m x K 7) For detailed mounting instructions refer to ABB Document No. 5SYA2039 Mechanical properties Parameter Dimensions Clearance distance in air Surface creepage distance Mass 7) 7) Symbol LxW da ds m x Conditions according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term: according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term: min 23 19 33 32 typ max Unit mm mm mm H Typical , see outline drawing 190 x 140 x 38 1380 g Thermal and mechanical properties according to IEC 60747 - 15 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1595-00 July 07 page 3 of 9 5SNA 1500E330300 Electrical configuration Outline drawing 2) Note: all dimensions are shown in mm 2) For detailed mounting instructions refer to ABB Document No. 5SYA2039 This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX. This product has been designed and qualified for Industrial Level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1595-00 July 07 page 4 of 9 5SNA 1500E330300 3000 3000 VCE = 20 V 2500 25 C 2000 125 C IC [A] 1500 IC [A] 2500 2000 1500 125 C 1000 1000 25 C 500 VGE = 15V 0 0 1 2 VCE [V] 3 4 5 500 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 VGE [V] Fig. 1 Typical on-state characteristics, chip level Fig. 2 Typical transfer characteristics, chip level 3000 3000 19 V 17 V 15 V 13 V 19 V 17 V 2500 15 V 13 V 2000 11 V 1500 2500 2000 1500 11 V 1000 IC [A] IC [A] 1000 9V 500 9V T vj = 25 C 500 Tvj = 125 C 0 5 0 1 2 3 VCEsat [V] 4 5 6 0 0 1 2 V CEsat [V] 3 4 Fig. 3 Typical output characteristics, chip level Fig. 4 Typical output characteristics, chip level ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1595-00 July 07 page 5 of 9 5SNA 1500E330300 6 VCC = 1800 V VGE = 15 V R Gon = 1.0 ohm R Goff = 1.5 ohm C GE = 220 nF Tvj = 125 C L = 100 nH 12 11 10 E off 9 8 Eon, E off [J] 7 6 5 4 E off 3 2 1 E sw [J] = 445 x 10 -9 x I C 2 + 1.95 x 10 -3 x I C + 745 x 10 -3 5 4 Eon, E off [J] VCC = 1800 V IC = 1500 A VGE = 15 V Tvj = 125 C L = 100 nH C GE = 220 nF E on 3 E on 2 1 0 0 500 1000 1500 IC [A] 2000 2500 3000 0 0 1 2 3 4 5 6 7 8 9 10 11 R G [ohm] Fig. 5 Typical switching energies per pulse vs collector current Fig. 6 Typical switching energies per pulse vs gate resistor 10 10 VCC = 1800 V IC = 1500 A VGE = 15 V Tvj = 125 C L = 100 nH C GE = 220 nF td(on), tr, td(off), t f [s] t d(off) td(off) td(on) td(on), tr, td(off), t f [s] 1 tf td(on) tr 1 0.1 tr VCC = 1800 V RGon = 1.0 ohm RGoff = 1.5 ohm CGE = 220 nF VGE = 15 V Tvj = 125 C L = 100 nH 500 1000 1500 IC [A] 2000 2500 3000 tf 0.01 0 0.1 0 1 2 3 4 5 6 7 8 9 10 11 R G [ohm] Fig. 7 Typical switching times vs collector current Fig. 8 Typical switching times vs gate resistor ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1595-00 July 07 page 6 of 9 5SNA 1500E330300 1000 20 VCC = 1800 V C ies 15 100 VCC = 2400 V VGE [V] VGE = 0V f OSC = 1 MHz VOSC = 50 mV C [nF] C oes 10 10 5 C res IC = 1500 A Tvj = 25 C 1 0 5 10 15 20 V CE [V] 25 30 35 0 0 1 2 3 4 5 6 Q g [C] 7 8 9 10 Fig. 9 Typical capacitances vs collector-emitter voltage Fig. 10 Typical gate charge characteristics 2.5 VCC 2500 V, Tvj = 125 C VGE = 15 V, R G = 1.5 ohm 2 1.5 ICpulse / IC 1 0.5 Chip Module 0 0 500 1000 1500 2000 2500 3000 3500 VCE [V] Fig. 11 Turn-off safe operating area (RBSOA) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1595-00 July 07 page 7 of 9 5SNA 1500E330300 E rec 2500 2000 R G = 3.3 ohm R G = 2.2 ohm Erec [mJ], I rr [A], Q rr [C] E rec [mJ],I rr [A], Q rr [C] 1500 VCC = 1800 V VGE = 15 V R Gon = 1.0 ohm R Goff = 1.5 ohm C GE = 220 nF Tvj = 125 C L = 100 nH E rec [mJ] = -239 x 10 -6 x I F 2 + 1.45 x IF + 355 Q rr 1000 1000 E rec 500 Irr VCC = 1800 V IF = 1500 A Tvj = 125 C L = 100 nH C GE = 220 nF 1 2 3 4 5 6 7 500 0 0 500 1000 1500 IF [A] 2000 2500 3000 0 0 di/dt [kA/s] Fig. 12 Typical reverse recovery characteristics vs forward current Fig. 13 Typical reverse recovery characteristics vs di/dt 3000 3000 2500 25 C 2000 125 C IF [A] 1500 IF [A] 2000 2500 R G = 1.8 ohm Irr VCC 2500 V di/dt 10 kA/s Tvj = 125 C 1500 1000 1000 500 500 0 0 0.5 1 1.5 VF [V] 2 2.5 3 0 0 500 1000 1500 2000 2500 3000 3500 VR [V] Fig. 14 Typical diode forward characteristics, chip level Fig. 15 Safe operating area diode (SOA) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1595-00 July 07 page 8 of 9 R G = 1.5 ohm R G = 1.2 ohm R G = 1.0 ohm Q rr 1500 R G = 10 ohm 2000 R G = 5.6 ohm 5SNA 1500E330300 0.1 Analytical function for transient thermal impedance: Zth(j-h) [K/W] IGBT, DIODE Zth(j-c) Diode 0.01 Zth(j-c) IGBT Z th (j-c) (t) = R i (1 - e -t/ i ) i =1 2 1.375 30.1 2.887 30.1 i IGBT n 1 5.854 207.4 11.54 203.6 3 0.641 7.55 1.229 7.53 4 0.632 1.57 1.295 1.57 Ri(K/kW) i(ms) Ri(K/kW) i(ms) 0.001 0.0001 0.001 0.01 0.1 t [s] 1 10 Fig. 16 Thermal impedance vs time For detailed information refer to: * 5SYA 2042-02 Failure rates of HiPak modules due to cosmic rays * 5SYA 2043-01 Load - cycle capability of HiPaks * 5SZK 9120-00 Specification of environmental class for HiPak (available upon request) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors DIODE Doc. No. 5SYA 1595-00 July 07 |
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