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AEGIS
SEMICONDUTORES LTDA.
A5A:1300.XX
VOLTAGE RATINGS
Part Number A5A:1300.02 A5A:1300.04 A5A:1300.06 A5A:1300.08 A5A:1300.10 A5A:1300.12 VRRM , VR (V) Max. rep. peak reverse voltage
O TJ = 0 to 180 C
VRSM , VR (V) Max. non-rep. peak reverse voltage
O
TJ = -40 to 0 C 200 400 600 800 1000 1200
TJ = 25 to 180 C 300 500 700 900 1100 1300
O
200 400 600 800 1000 1200
MAXIMUM ALLOWABLE RATINGS
PARAMETER TJ Junction Temperature Tstg Storage Temperature IF(AV) Max. Av. current @ Max. TC VALUE -40 to 180 -40 to 180 1040 125 2030 13.6 IFSM Max. Peak non-rep. surge current 14.2 kA 16.1 16.9 960 I2t Max. I2t capability 1040 1090 1190 It
2 1/2
O
UNITS
O O
NOTES 180 half sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave t = 10ms Initial T J = 180 C, rated VRRM applied after surge.
O Initial T J = 180 C, no voltage applied after surge. O O
C C A C A
IF(RMS) Nom. RMS current
O Initial T J = 180 C, rated VRRM applied after surge.
kA2s
t = 8.3 ms t = 10ms
O Initial T J = 180 C, no voltage applied after surge.
Max. I t
2 1/2
capability
t = 8.3 ms O Initial T J = 180 C, no voltage applied after surge. kA2s1/2 N.m I2t for time t x = I2t1/2 * tx1/2. (0.1 < tx < 10ms). -
F Mounting Force
13000 900
AEGIS
SEMICONDUTORES LTDA.
A5A:1300.XX
CHARACTERISTICS
PARAMETER VFM Peak forward voltage VF(TO)1 Low-level threshold VF(TO)2 High-level threshold rF1 Low-level resistance rF2 High-level resistance IRM Peak reverse current RthJC Thermal resistance, junction-to-case RthCS Thermal resistance, case-to-sink wt Weight Case Style MIN. ----------------------TYP. 1.60 --------15 --------85(3.0) TO-200AB MAX. UNITS 1.78 0.803 0.871 0.316 0.279 40 0.038 0.045 0.046 0.020 --O O O
TEST CONDITIONS Initial T J = 25 C, 50-60Hz half sine, Ipeak = 3267A. O TJ = 180 C Av. power = V F(TO) * IF(AV) +rF * [IF(RMS)]2 Use low values for IFM < pIF(AV) TJ = 180 C. Max. rated VRRM
O O O
V V mW mA
C/W DC operation, double side C/W 180 sine wave, double side
O
C/W 120 rectangular wave, duble side Mtg. Surface smooth, flat and greased. Single side. O C/W For double side, divide value by 2. -----
g(oz.)
180
Maximum Allowable Case Temperature
Maximum Allowable Case Temperature (C)
Maximum Allowable Case Temperature
180 170 160 150 140 130
30
Maximum Allowable Case Temperature (C)
170 160 150 140 130 120 110 100 0 200 400 600 800 1000 1200 1400
*Sinusoidal waveform
120 110 100 90 80 70
*Rectangular waveform
60 90 120 180
30 60 90 120 180
DC
0
500
1000
1500
2000
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
AEGIS
SEMICONDUTORES LTDA.
A5A:1300.XX
Maximum Average Forward Power Loss
Maximum Average Forward Power Loss (W)
18000 16000 14000 12000 10000 8000
90 60
Maximum Average Forward Power Loss
30
30
25000
Maximum Average Forward Power Loss (W)
20000
15000
60
10000
90 120
6000 4000 2000 0
*Rectangular waveform
120 180 DC
5000
180
0 0
*Sinusoidal waveform
500
1000
1500
2000
0
500
1000
1500
2000
Average Forward Current (A)
Average Forward Current (A)
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
10000
Forward Voltage Drop
0.1
Transient Thermal Impedance ZthJC
1000
Transient Thermal Impedance ZthJC (C/W
1.5 2.0 2.5 3.0 3.5
Instantaneous Forward Current (A)
0.01
125C 25C
100 0.5 1.0
1E-3 1E-3
0.01
0.1
1
10
Instantaneous Forward Voltage (V)
Time (s)
Fig. 5 - Forward Voltage Drop Characteristics
Fig. 6 - Transient Thermal Impedance Characteristics
AEGIS
SEMICONDUTORES LTDA.
A5A:1300.XX
TO-200AB
Fig. 7 - Outline Characteristics

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