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AEGIS
SEMICONDUTORES LTDA.
A1A:50.XX
VOLTAGE RATINGS
Part Number A1A:50.02 A1A:50.04 A1A:50.06 A1A:50.08 A1A:50.10 A1A:50.12 A1A:50.14 A1A:50.16 VRRM , VR (V) Max. rep. peak reverse voltage TJ = 0 to 180 O C 200 400 600 800 1000 1200 1400 1600 TJ = -40 to 0 C 200 400 600 800 1000 1200 1400 1600
O
VRSM , VR (V) Max. nonrep. peak reverse voltage TJ = 25 to 180 C 300 500 700 900 1100 1300 1500 1700
O
This datasheet applies to: Metric thread: A1A:50.XX, A1B:50.XX Inch thread: A2A:50.XX, A2B:50.XX
MAXIMUM ALLOWABLE RATINGS
PARAMETER TJ Junction Temperature Tstg Storage Temperature IF(AV) Max. Av. current @ Max. TC VALUE -40 to 180 -40 to 180 50 125 95 640 IFSM Max. Peak non-rep. surge current 697 A 762 830 1.87 I2t Max. I2t capability 2.04 2.65 2.89 I2t1/2 Max. I2t1/2 capability F Mounting Force 20 4(~30) kA2s1/2 N.m(Lbf.in) kA2s 50 Hz half cycle sine wave 60 Hz half cycle sine wave t = 10ms t = 8.3 ms t = 10ms
O Initial T J = 180 C, no voltage applied after surge. O Initial T J = 180 C, no voltage applied after surge.
UNITS
O O
NOTES O 180 half sine wave
C C C
A
O
IF(RMS) Nom. RMS current
A 50 Hz half cycle sine wave 60 Hz half cycle sine wave
O Initial T J = 180 C, rated VRRM applied after surge.
O Initial T J = 180 C, rated VRRM applied after surge.
t = 8.3 ms O Initial T J = 180 C, no voltage applied after surge. I2t for time t x = I2t1/2 * tx1/2. (0.1 < tx < 10ms). -
AEGIS
SEMICONDUTORES LTDA.
A1A:50.XX
CHARACTERISTICS
PARAMETER VFM Peak forward voltage VF(TO)1 Low-level threshold VF(TO)2 High-level threshold rF1 Low-level resistance rF2 High-level resistance IRM Peak reverse current RthJC Thermal resistance, junction-to-case RthCS Thermal resistance, case-to-sink wt Weight Case Style MIN. --------------------TYP. 1.35 ------------------MAX. UNITS 1.50 0.88 1.02 2.50 1.53 4.00 0.85 1.00 1.20 0.20 V V mW mA
O O O
TEST CONDITIONS Initial T J = 25OC, sinusoidal wave, Ipeak = 157A. O TJ = 180 C Av. power = V F(TO) * IF(AV) +rF * [IF(RMS)]2 Use low values for IFM < pIF(AV) TJ = 180 O Max. Rated VRRM C.
C/W DC operation C/W 180O sine wave C/W 120O rectangular wave C/W Mtg. Surface smooth, flat and greased. Single side. -----
O
----30(1.06) DO-203AB (DO-5)
g(oz.) JEDEC
180
Maximum Allowable Case Temperature
180 175 170 165 160 155 150 145 140 135 130 125 120 115 110 105 100
*Rectangular waveform
Maximum Allowable Case Temperature
Maximum Allowable Case Temperature (C)
170 165 160 155 150 145 140 135 130 125 120 115 110 0 5 10 15 20 25 30 35 40 45 50 55
*Sinusoidal waveform 180 120 90 60 30
Maximum Allowable Case Temperature (C)
175
30
60
90 120
180
DC
60
65
0
20
40
60
80
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
AEGIS
SEMICONDUTORES LTDA.
A1A:50.XX
Maximum Average Forward Power Loss
500
400
Maximum Average Forward Power Loss
30
Maximum Average Forward Power Loss (W)
Maximum Average Forward Power Loss (W)
30
350 300 250
400
300
60
60
200
90
200
90 120 180
150 100 50 0 0 20 40 60 80
120 180 DC
100
0 0
*Sinusoidal waveform
20
40
60
80
100
100
Average Forward Current (A)
*Rectangular waveform
Average Forward Current (A)
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
Forward Voltage Drop Characteristics
Instantaneous Forward Current (A)
Transient Thermal Impedance (C / W)
1.2
Transient Thermal Impedance
Zthjh
1.0 Zthjc 0.8
100
0.6
10
180C 25C
0.4
0.2
1 0.5 1.0 1.5 2.0 2.5
0.0 1E-3
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
Time (s)
Fig. 5 - Forward Voltage Drop Characteristics
Fig. 6 - Transient Thermal Impedance
AEGIS
SEMICONDUTORES LTDA.
A1A:50.XX
DO-5
SW 17
M8 x 1.25 1/4" UNF 2A
Fig. 7 - Outline Characteristics

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