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| HWC30NC C-Band Power FET Non-Via Hole Chip Autumn 2002 V1 Features * * * * Low Cost GaAs Power FET Class A or Class AB Operation 11 dB Typical Gain at 4 GHz 5V to 10V Operation Outline Dimensions 860 S ou rce 650 1 4 Description 430 2 5 The HWC30NC is a medium power GaAs FET designed for various L-band & S-band applications. 210 3 6 Absolute Maximum Ratings VDS VGS ID IG TCH TSTG PT * S ou rce 0 Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Channel Temperature Storage Temperature Power Dissipation +15V -5V IDSS 3mA 175C -65 to +175C 6W Units: m Thickness: 100 5 Chip size 50 Bond Pads 1-3 (Gate): Bond Pads 4-6 (Drain): 0.0 58.5 344.5 400.0 60 x 60 60 x 60 * mounted on an infinite heat sink Electrical Specifications (TA=25C) f =4 GHz for all RF Tests Symbol IDSS Parameters & Conditions Saturated Current at VDS=3V, VGS=0V Units mA Min. 500 Typ. 600 Max. 900 VP Pinch-off Voltage at VDS=3V, ID=30mA V -3.5 -2.0 -1.5 gm P1dB Transconductance at VDS=3V, ID=300mA Power Output at Test Points VDS=10V, ID=0.5 IDSS Gain at 1dB Compression Point VDS=10V, ID=0.5 IDSS Power-Added Efficiency (POUT = P1dB) VDS=10V, ID=0.5 IDSS mS - 300 - dBm 29 30 - G1dB dB 9 10 - PAE % 30 35 - Small Signal Common Source Scattering Parameters Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice. HWC30NC C-Band Power FET Non-Via Hole Chip Autumn 2002 V1 S-MAGN AND ANGLES VDS=10V, IDS=0.5IDSS (GHz) 2.00 2.50 3.00 3.50 4.00 4.50 5.00 5.50 6.00 6.50 7.00 7.50 8.00 8.50 9.00 9.50 10.00 lS11l 0.838 0.839 0.842 0.843 0.843 0.842 0.842 0.843 0.845 0.846 0.849 0.848 0.849 0.850 0.848 0.846 0.843 ANG -136.22 -144.63 -150.68 -154.74 -158.40 -161.14 -163.41 -165.18 -166.48 -167.39 -168.13 -169.26 -170.64 -171.65 -172.62 -173.36 -173.73 lS21l 4.344 3.525 2.954 2.526 2.208 1.958 1.755 1.597 1.461 1.348 1.249 1.162 1.087 1.027 0.969 0.921 0.873 ANG 92.80 85.70 79.70 74.29 69.51 65.26 61.58 58.03 54.54 51.38 48.23 45.29 42.69 40.04 37.10 34.79 32.10 lS12l 0.031 0.035 0.042 0.048 0.053 0.060 0.066 0.073 0.079 0.088 0.096 0.105 0.114 0.124 0.135 0.146 0.159 ANG 72.10 73.09 77.67 79.88 80.80 82.79 84.42 86.57 87.77 88.74 90.30 90.46 91.53 91.74 91.96 92.12 91.95 lS22l 0.187 0.209 0.238 0.267 0.293 0.324 0.350 0.367 0.385 0.401 0.423 0.441 0.466 0.491 0.510 0.519 0.533 ANG -97.86 -100.53 -103.32 -104.43 -106.47 -109.01 -110.46 -112.47 -114.54 -116.11 -118.03 -119.90 -122.08 -123.44 -126.11 -127.98 -131.95 Bonding Manner Gate, drain pad: 1 wire on each pad Source pad: 2 wires on each side Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice. |
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