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| HWC27NC C-Band Power FET Non-Via Hole Chip Autumn 2002 V1 Features * * * * Low Cost GaAs Power FET Class A or Class AB Operation 11 dB Typical Gain at 4 GHz 5V to 10V Operation 435 650 Outline Dimensions Source Description The HWC27NC is a medium power GaAs FET designed for various L-band & S-band applications. 1 3 215 2 4 Absolute Maximum Ratings VDS VGS ID IG TCH TSTG PT * Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Channel Temperature Storage Temperature Power Dissipation +15V -5V IDSS 2mA 175C -65 to +175C 3.5W 0.0 58.5 0.0 Source 344.5 400 * mounted on an infinite heat sink Unit: m Thickness: 100 5 Chip size 50 Bond Pads 1-2 (Gate): Bond Pads 3-4 (Drain): 60 x 60 60 x 60 Electrical Specifications (TA=25C) f = 4 GHz for all RF Tests Symbol IDSS Parameters & Conditions Saturated Current at VDS=3V, VGS=0V Units mA Min. 300 Typ. 400 Max. 600 VP Pinch-off Voltage at VDS=3V, ID=20mA V -3.5 -2.0 -1.5 gm P1dB Transconductance at VDS=3V, ID=200mA Power Output at Test Points VDS=10V, ID=0.5 IDSS Gain at 1dB Compression Point VDS=10V, ID=0.5 IDSS Power-Added Efficiency (POUT = P1dB) VDS=10V, ID=0.5 IDSS mS - 250 - dBm 27 28 - G1dB dB 9 10 - PAE % 30 40 - Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice. HWC27NC C-Band Power FET Non-Via Hole Chip Autumn 2002 V1 Small Signal Common Source Scattering Parameters S-MAGN AND ANGLES VDS=10V, IDS=0.5IDSS (GHz) 2.00 2.50 3.00 3.50 4.00 4.50 5.00 5.50 6.00 6.50 7.00 7.50 8.00 8.50 9.00 9.50 10.00 lS11l 0.845 0.839 0.839 0.837 0.834 0.832 0.828 0.827 0.827 0.827 0.829 0.827 0.830 0.828 0.827 0.827 0.825 ANG -115.62 -126.96 -135.39 -141.73 -147.23 -151.60 -155.23 -158.30 -161.00 -163.08 -165.07 -167.18 -169.65 -171.56 -173.63 -175.28 -176.45 lS21l 4.702 3.921 3.336 2.896 2.551 2.278 2.052 1.879 1.720 1.588 1.475 1.370 1.279 1.204 1.136 1.077 1.019 ANG 103.80 95.65 88.67 82.57 77.03 72.18 67.94 63.92 59.95 56.32 52.75 49.09 45.84 42.82 39.47 36.43 33.25 lS12l 0.028 0.032 0.037 0.042 0.045 0.048 0.052 0.056 0.061 0.066 0.070 0.077 0.083 0.089 0.096 0.104 0.110 ANG 71.07 71.05 72.49 72.98 74.32 76.58 77.92 80.91 83.84 85.29 86.33 87.32 89.28 89.60 89.96 90.23 91.35 lS22l 0.236 0.246 0.257 0.275 0.291 0.309 0.327 0.336 0.352 0.365 0.384 0.399 0.418 0.440 0.456 0.467 0.475 ANG -49.89 -55.54 -62.80 -68.12 -73.17 -79.08 -82.34 -85.76 -89.00 -91.68 -94.59 -97.11 -100.45 -102.74 -105.73 -107.27 -111.08 Bonding Manner Gate, drain pad: 1 wire on each pad Source pad: 2 wires on each side Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice. |
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