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SSM5G09TU
Silicon P Channel MOS Type (U-MOS)/Silicon Epitaxial Schottky Barrier Diode
SSM5G09TU
DC-DC Converter
* * Combined Pch MOSFET and Schottky Diode into one Package. Low RDS (ON) and Low VF Unit: mm
Absolute Maximum Ratings (Ta = 25C) MOSFET
Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP (Note 2) PD (Note 1) t = 10s Tch Rating -12 8 -1.5 -6.0 0.5 0.8 150 Unit V V A
Drain power dissipation Channel temperature
W C
DIODE
Absolute Maximum Ratings (Ta = 25C) SCHOTTKY
Characteristics Maximum (peak) reverse voltage Reverse voltage Average forward current Peak one cycle surge forward current (non-repetitive) Junction temperature Symbol VRM VR IO IFSM Tj Rating 15 12 0.5 2 (50 Hz) 125 Unit V V A A C
UFV
JEDEC JEITA TOSHIBA
2-2R1A
Weight: 7 mg (typ.)
Absolute Maximum Ratings (Ta = 25C) MOSFET, DIODE COMMON
Characteristics Storage temperature Operating temperature Symbol Tstg Topr (Note 3) Rating -55~125 -40~85 Unit C C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on FR4 board (25.4 mm x 25.4 mm x 1.6 t, Cu pad: 645 mm2) Note 2: The pulse width limited by max channel temperature. Note 3: Operating temperature limited by max channel temperature and max junction temperature.
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SSM5G09TU
Marking
5 4
Equivalent Circuit
5 4
KEP
1
2
3
1
2
3
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is protected against static discharge. Operators should wear anti-static clothing and use containers and other objects that are made of anti-static materials. The Channel-to-Ambient thermal resistance Rth (ch-a) and the drain power dissipation PD vary according to the board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account.
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MOSFET Electrical Characteristics (Ta = 25C)
Characteristic Gate leakage current Drain-Source breakdown voltage Drain Cut-off current Gate threshold voltage Forward transfer admittance Drain-Source on-resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Symbol IGSS V (BR) DSS V (BR) DSX IDSS Vth |Yfs| RDS (ON) Ciss Crss Coss ton toff Test Condition VGS = 8 V, VDS = 0 ID = -1 mA, VGS = 0 ID = -1 mA, VGS = +8 V VDS = -12 V, VGS = 0 VDS = -3 V, ID = -0.1 mA VDS = -3 V, ID = -0.75 A ID = -0.75 A, VGS = -4 V (Note 4) (Note 4) Min -12 -4 -0.5 1.75 Typ. 3.5 100 130 550 155 170 34 28 Max 1 -1 -1.1 130 200 Unit A V A V S m pF pF pF ns
ID = -0.75 A, VGS = -2.5 V (Note 4) VDS = -10 V, VGS = 0, f = 1 MHz VDS = -10 V, VGS = 0, f = 1 MHz VDS = -10 V, VGS = 0, f = 1 MHz VDD = -10 V, ID = -0.75 A VGS = 0~-2.5 V, RG = 4.7
Note 4: Pulse measurement
Switching Time Test Circuit
(a) Test circuit
0 -2.5 V 10 s OUT VDD = -10 V RG = 4.7 Duty < 1% = VIN: tr, tf < 5 ns Common source Ta = 25C
(b) VIN
0V
10% 90%
IN RG
-2.5 V VDS (ON) 90% 10% tr ton
(c) VOUT
VDD
VDD
tf toff
Precaution
Vth can be expressed as the voltage between the gate and source when the low operating current value is ID = 100 A for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Be sure to take this into consideration when using the device.
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Schottky Diode Electrical Characteristics (Ta = 25C)
Characteristic Forward voltage Reverse current Total capacitance Symbol VF (1) VF (2) IR CT IF = 0.3 A IF = 0.5 A VR = 12 V VR = 0 V, f = 1 MHz Test Condition Min Typ. 0.33 0.37 80 Max 0.39 0.43 100 Unit V V A pF

Precaution
The schottky barrier diode of this product are having large-reverse-current-leakage characteristic compare to the other switching diodes. This current leakage and not proper operating temperature or voltage may cause thermal runaway. Be sure to take forward and reverse loss into consideration when you design.
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MOS Electrical Characteristics Graph
I D - V D S (MO S FET)
-4
I D - V G S (MO S FET)
Common Source Ta=25
-4.0V
-3.5 -3 Drain current I D (mA) -2.5
- 10000
-2.5V -2.0V
Common Source VDS =-3V
- 1000 - 100
Ta=85 25
VGS =-1.8V
-2 -1.5 -1 -0.5 0 0 -0.5 -1 Drain-Source voltage V DS (V) -1.5 -2
Drain current I D (mA)
- 10
-25
-1
- 0.1
- 0.01
0 -0.5 -1 -1.5 -2 -2.5 Gate-Source voltage V GS (V)
R D S(O N) - I D (MO S FET )
300 0.5
R D S(O N) - V G S (MO S FET )
Common Source I D=-0.6A
0.4 Drain-Source on-resistance
Common Source Ta=25
Drain-Source on-resistance 200 R DS(ON) (m)
RDS(ON) ()
-2.5V
0.3
0.2
100
25 Ta=85
VGS =-4.0V
0.1
-25
0 0 -0.5 -1 -1.5 -2 -2.5 -3 -3.5 -4 Drain current I D (A) 0 0 -2 -4 Gate-Source Voltage V GS (V) -6 -8
R D S(O N) - Ta (MO S FET)
300 -2
V th - Ta (MO S FET)
Common Source I D=-0.1mA VDS =-3V
Common Source I D=-0.6A
-1.8 -1.6
Drain-Source on-resistance
RDS(ON) ()
-2.5V
Gate threshold voltage Vth(V)
200
-1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2
100
-4.0V
0 -25 0 25 50 75 100
0 -25 0 25 50 75 100
Ambient temperture Ta ()
Ambient temperture Ta ()
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|Yfs| - I D (MO S FET )
100 1000
C - V D S (MO S FET )
C iss
Commonm Source VDS =-3V Ta=25
Forward transfer admittance |Yfs| (mS) 10
C oss
Capacitance C (pF)
1
100
C rss
0.1
Common Source VGS =0V f=1MHz Ta=25
- 0.01 - 0.1 Drain Current I D (A) -1 - 10 10 - 0.1 -1 - 10 - 100
0.01 - 0.001
Drain-Source voltage V DS (V)
I D R - V D S (MO S FET)
-2
t - I D (MO S FET)
1000
Common Source VGS =0 Ta=25
Drain reverse current I DR (mA) -1.5
toff
100 Switching time t (ns)
Common Source VDD=-10V VGS =02.5V Ta=25
D
tf ton
G
-1
IDR S
10
tr
-0.5
1
0 0 0.2 0.4 0.6 0.8 1 Drain-Source voltage V DS (V)
0.1 - 0.01
- 0.1 Drain curren I D (mA)
-1
- 10
Dyn a mic In p u t Ch a ra cteristic (MO S FET)
-10
Common Source VDD=-10V
-8 Gate-Source voltage V GS (V)
I D=1.2A Ta=25
-6
-4
-2
0 0 1 2 3 4 5 6 7 8 9 10
Tatal gate charge Q g (nC)
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S a fe o p era tin g a rea (MO S FET)
- 10
1ms 10ms
I D max (Pulsed) * 100ms I D max (Continuous) DC operation Ta=25
-1 Drain current I D (A)
- 0.1
Mounted on FR4 board (25.4 mm 25.4 mm 1.6 t Cu pad: 645 mm2 )
- 0.01
*:Single nonrepetive Pulse Ta 25C Curves must be derated linealy with increase in temperture.
- 0.001 - 0.1
-1
- 10
- 100
Drain-Source current V DS (V)
P D - Ta (MO S FET)
600
Mounted on FR4 board (25.4 mm 25.4 mm 1.6 t, Cu Pad: 645 mm2
500 Drain power dissipationP D (mW)
400
300
200
100
0 0 20 40 60 80 100 120 140 160
Ambient temperature Ta ()
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SBD Electrical Characteristics Graph
IF - VF (SBD)
1000 10
IR - VR (SBD)
(mA)
(mA)
85 100 75 50
85 1
IR
IF
75
Forward current
Reverse current
0.1 50
10
Ta = 25C
0.01
Ta = 25C
0 1 0 0.001 0 Pulse measurement 3 6 9 12
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Forward voltage
VF
(V)
Reverse voltage
VR
(V)
CT - VR (SBD)
3000 1000 f = 1 MHz Ta = 25C
CT Capacitance
(pF)
100 10 1 0.01
0.1
1
10
100
Reverse voltage
VR
(V)
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Transient thermal impedance Graph
rth - tw (MOSFET) rth (C/W )
1000 Single pulse Mounted on FR4 board 2 (25.4 mm x 25.4 mm x 1.6 t, Cu Pad: 645 mm )
Transient thermal impedance
100
10
1 0.001
0.01
0.1
1
10
100
1000
Pulse width
tw
(s)
rth (C/W)
rth - tw (SBD)
1000
Transient thermal impedance
100
10
1 0.001
Single pulse Mounted on FR4 board 2 (25.4 mm x 25.4 mm x 1.6 t, Cu Pad: 645 mm ) 0.01 0.1 1 10 100 1000
Pulse width
tw
(s)
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RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN GENERAL
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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