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| TSM1N60L 600V N-Channel Power MOSFET PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source TO-252 TO-251 VDS (V) 600 RDS(on)() 12 @ VGS =10V ID (A) 1 General Description The TSM1N60L is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. Features Robust high voltage termination Avalanche energy specified Diode is characterized for use in bridge circuits Source to Drain diode recovery time comparable to a discrete fast recovery diode. IDSS and VDS(on) specified at elevated temperature Block Diagram Ordering Information Part No. TSM1N60LCP RO TSM1N60LCH C5 Package TO-252 TO-251 Packing 2.5Kpcs / 13" Reel 50pcs / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) a,b Symbol VDS VGS ID IDM IS EAS PD TJ TJ, TSTG 1/7 Limit 600 30 1 4 1 20 2.5 +150 -55 to +150 Unit V V A A A mJ W o o Single Pulse Drain to Source Avalanche Energy (VDD = 100V, VGS=10V, IAS=2A, L=10mH, RG=25) Maximum Power Dissipation @Ta = 25 C Operating Junction Temperature Operating Junction and Storage Temperature Range o C C Version: A07 TSM1N60L 600V N-Channel Power MOSFET Thermal Performance Parameter Lead Temperature (1/8" from case) Thermal Resistance - Junction to Ambient Notes: Surface mounted on FR4 board t 10sec Symbol TL RJA Limit 10 62.5 Unit o S C/W Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min 600 -2.0 --------------- Typ -10.5 ---10 -8.5 1.8 4 210 28 4.2 8 21 18 24 Max -12 4.0 10 100 -1.5 14 ---------- Unit V V uA nA S V Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS Drain-Source On-State Resistance VGS = 10V, ID = 0.6A RDS(ON) Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V IDSS Gate Body Leakage VGS = 20V, VDS = 0V IGSS Forward Transconductance VDS 50V, ID = 0.5A gfs Diode Forward Voltage IS = 1A, VGS = 0V VSD b Dynamic Total Gate Charge Qg VDS = 400V, ID = 1A, Gate-Source Charge Qgs VGS = 10V Gate-Drain Charge Qgd Input Capacitance Ciss VDS = 25V, VGS = 0V, Output Capacitance Coss f = 1.0MHz Reverse Transfer Capacitance Crss c Switching Turn-On Delay Time td(on) Turn-On Rise Time VGS = 10V, ID = 1A, tr VDS = 300V, RG = 6 Turn-Off Delay Time td(off) Turn-Off Fall Time tf Notes: a. Pulse test: pulse width <=300uS, duty cycle <=2% b. For design reference only, not subject to production testing. c. Switching time is essentially independent of operating temperature. nC pF nS 2/7 Version: A07 TSM1N60L 600V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 3/7 Version: A07 TSM1N60L 600V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) On-Resistance vs. Gate-Source Voltage Threshold Voltage Maximum Safe Operating Area Normalized Thermal Transient Impedance, Junction-to-Ambient 4/7 Version: A07 TSM1N60L 600V N-Channel Power MOSFET SOT-252 Mechanical Drawing DIM A A1 B C D E F G G1 G2 H I J K L M TO-252 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 2.3BSC 0.09BSC 4.6BSC 0.18BSC 6.80 7.20 0.268 0.283 5.40 5.60 0.213 0.220 6.40 6.65 0.252 0.262 2.20 2.40 0.087 0.094 0.00 0.20 0.000 0.008 5.20 5.40 0.205 0.213 0.75 0.85 0.030 0.033 0.55 0.65 0.022 0.026 0.35 0.65 0.014 0.026 0.90 1.50 0.035 0.059 2.20 2.80 0.087 0.110 0.50 1.10 0.020 0.043 0.90 1.50 0.035 0.059 1.30 1.70 0.051 0.67 Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 5/7 Version: A07 TSM1N60L 600V N-Channel Power MOSFET SOT-251 Mechanical Drawing DIM A A1 b C D D1 E e F L L1 TO-251 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 2.20 2.4 0.087 0.095 1.10 1.30 0.043 0.051 0.40 0.80 0.016 0.032 0.40 0.60 0.016 0.024 6.70 7.30 0.264 0.287 5.40 5.65 0.213 0.222 6.40 6.65 0.252 0.262 2.10 2.50 0.083 0.098 0.40 0.60 0.016 0.024 7.00 8.00 0.276 0.315 1.60 1.86 0.063 0.073 Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 6/7 Version: A07 TSM1N60L 600V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7/7 Version: A07 |
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