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TSB772S
Low Vcesat PNP Transistor
TO-92
Pin Definition: 1. Emitter 2. Collector 3. Base
SOT-89
Pin Definition: 1. Base 2. Collector 3. Emitter
PRODUCT SUMMARY
BVCBO BVCEO IC VCE(SAT) -50V -50V -3A -0.5V @ IC / IB = -2A / -200mA
Features
Low VCE(SAT) -0.25 @ IC / IB = 2A / 200mA (Typ.) Complementary part with TSD882S
Ordering Information
Part No.
TSD772SCT B0 TSD772SCT A3 TSD772SCY RM
Package
TO-92 TO-92 SOT-89
Packing
1Kpcs / Bulk 2Kpcs / Ammo 1Kpcs / 7" Reel
Structure
Epitaxial Planar Type PNP Silicon Transistor
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation DC Pulse SOT-89 TO-92
Symbol
VCBO VCEO VEBO IC PD TJ TSTG
Limit
-50 -50 -5 -3 -7 (note) 0.75 0.625 +150 - 55 to +150
Unit
V V V A W
o o
Operating Junction Temperature Operating Junction and Storage Temperature Range Note: Single pulse, Pw350us, Duty2%
C C
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Transfer Ratio
Conditions
IC = -50uA, IE = 0 IC = -1mA, IB = 0 IE = -50uA, IC = 0 VCB = -30V, IE = 0 VEB = 3V, IC = 0 IC / IB = -2A / -200mA IC / IB = -2A / -200mA
Symbol
BVCBO BVCEO BVEBO ICBO IEBO *VCE(SAT) *VBE(SAT) *hFE fT Cob
Min
-50 -50 -5 ----100 ---
Typ
------0.3 -1 -80 55
Max
----1 -1 -0.5 -2 500 ---
Unit
V V V uA uA V V
VCE = -2V, IC = -1A VCE =-5V, IC=-100mA, Transition Frequency f=100MHz Output Capacitance VCB = -10V, f=1MHz * Pulse Test: Pulse Width 380uS, Duty Cycle2%
MHz pF
1/5
Version: A07
TSB772S
Low Vcesat PNP Transistor
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Figure 1. DC Current Gain Figure 2. VCE(SAT) v.s. Ic
Figure 3. VBE(SAT) v.s. Ic
Figure 4. Power Derating Curve
2/5
Version: A07
TSB772S
Low Vcesat PNP Transistor
TO-92 Mechanical Drawing
DIM A B C D E F G H
TO-92 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 4.30 4.70 0.169 0.185 4.30 4.70 0.169 0.185 14.30(typ) 0.563(typ) 0.43 0.49 0.017 0.019 2.19 2.81 0.086 0.111 3.30 3.70 0.130 0.146 2.42 2.66 0.095 0.105 0.37 0.43 0.015 0.017
3/5
Version: A07
TSB772S
Low Vcesat PNP Transistor
SOT-89 Mechanical Drawing
DIM A B C D E F G H I J
SOT-89 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 4.40 4.60 0.173 0.181 1.50 1.7 0.059 0.070 2.30 2.60 0.090 0.102 0.40 0.52 0.016 0.020 1.50 1.50 0.059 0.059 3.00 3.00 0.118 0.118 0.89 1.20 0.035 0.047 4.05 4.25 0.159 0.167 1.4 1.6 0.055 0.068 0.35 0.44 0.014 0.017
4/5
Version: A07
TSB772S
Low Vcesat PNP Transistor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.
5/5
Version: A07

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