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| TS13007B High Voltage NPN Transistor TO-220 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO BVCBO IC VCE(SAT) 400V 700V 8A 3V @ IC / IB = 8A / 2A Features High Voltage High Speed Switching Block Diagram Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. TS13007BCZ C0 Package TO-220 Packing 50pcs / Tube Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Note: Single Pulse. PW = 300uS, Duty 2% DC Pulse DC Pulse Symbol VCBO VCEO VEBO IC IB PD TJ TSTG Limit 700V 400V 9 8 16 4 8 80 +150 - 55 to +150 Unit V V V A A W o o C C 1/5 Version: A07 TS13007B High Voltage NPN Transistor Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Static Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage IC =1mA, IB =0 IC =10mA, IE =0 IE =1mA, IC =0 VCE =400V, IB=0 VCB =700V, IE =0 VEB = 9V, IC =0 IC=2A, IB =0.4A IC=5A, IB =1A IC=8A, IB =2A IC=2A, IB =0.4A IC=5A, IB =1A VCE =5V, IC = 2A VCE =5V, IC = 5A VCE =10V, IC =0.5A VCB =10V, f =0.1MHz BVCBO BVCEO BVEBO ICEO ICBO IEBO VCE(SAT)1 VCE(SAT)2 VCE(SAT)3 VBE(SAT)1 VBE(SAT)2 hFE 700 400 9 --------20 5 4 ------------------180 0.06 0.45 2.8 0.3 ---1 1 1 1 1.5 3 1.2 1.6 40 30 --0.1 1 3 0.7 MHz pF uS uS uS uS V V V mA mA mA V Conditions Symbol Min Typ Max Unit Base-Emitter Saturation Voltage DC Current Gain Dynamic Frequency Output Capacitance Delay Time Rise Time Storage Time Fall Time V fT Cob td tr tSTG tf Resistive Load Switching Time (Ratings) VCC =125V, IC =5A, IB1 =IB2=1A, tP =25uS Duty Cycle 1% Note: pulse test: pulse width 300uS, duty cycle 2% 2/5 Version: A07 TS13007B High Voltage NPN Transistor Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. Static Characteristics Figure 2. DC Current Gain Figure 3. VCE(SAT) v.s. VBE(SAT Figure 4. Power Derating 3/5 Version: A07 TS13007B High Voltage NPN Transistor TO-220 Mechanical Drawing DIM A B C D E F G H J K L M N O P TO-220 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 10.000 10.500 0.394 0.413 3.740 3.910 0.147 0.154 2.440 2.940 0.096 0.116 6.350 0.250 0.381 1.106 0.015 0.040 2.345 2.715 0.092 0.058 4.690 5.430 0.092 0.107 12.700 14.732 0.500 0.581 14.224 16.510 0.560 0.650 3.556 4.826 0.140 0.190 0.508 1.397 0.020 0.055 27.700 29.620 1.060 1.230 2.032 2.921 0.080 0.115 0.255 0.610 0.010 0.024 5.842 6.858 0.230 0.270 Marking Diagram Y M = Year Code = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) = Lot Code L 4/5 Version: A07 TS13007B High Voltage NPN Transistor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 5/5 Version: A07 |
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