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TLN201(F)
TOSHIBA Infrared LED GaAAs Infrared Emitter
TLN201(F)
Lead(Pb)-Free Opto-Electronic Switches Tape And Card Readers Equipment Using Infrared Transmission
* * * * * * To-18 metal package. High radiant power: Po = 5mW(typ.) High radiant intensity: IE = 35mW / sr(typ.) Excellent radiant-intensity linearity. Modulation by pulse operation and high frequency is possible. Highly reliable due to hermetic seal Same external shape as TPS708(F) photodiode Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristic Forward current Forward current derating (Ta > 25C) Pulse forward current Reverse voltage Operating temperature range Storage temperature range (Note 1) Symbol IF IF / C IFP VR Topr Tstg Rating 100 -1 1 5 -40~125 -55~150 Unit mA mA / C A V C C
TOSHIBA
4-5Q2
Weight: 0.33 g (typ.)
Pin Connection
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in 1 2 temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. 1. Cathode operating temperature/current/voltage, etc.) are within the 2. Anode (case) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width 100s,repetitive frequency = 100Hz
Markings
Product No.(TL omitted) Monthly lot number N201 Month of manufacture (January to December denoted by letters A to L respectively) Year of manufacture (last digit of year of manufacture)
Letter color:red
1
2007-10-01
TLN201(F)
Optical And Electrical Characteristics (Ta = 25C)
Characteristic Forward voltage Pulse forward voltage Reverse current Radiant intensity Radiant power Capacitance Peak emission wavelength Spectral line half width Half value angle Symbol VF VFP IR IE PO CT P
1 2
Test Condition IF = 50mA IFP = 1A VR = 5V IF = 50mA IF = 50mA VR = 0, f = 1MHz IF = 50mA IF = 50mA IF = 50mA
Min 20
Typ. 1.5 5.0 35 5 17 880 80 7
Max 1.9 10
Unit V V A mW / sr mW pF nm nm
Precautions
Please be careful of the followings. 1. Soldering temperature : 260C max Soldering time : 5s max (Soldering must be performed 1.5m from the bottom of the package.) 2. When forming the leads, bend each lead under the 2mm from the body of the device. Soldering must be performed after the leads have been formed. 3. Radiant intensity falls over time due to the current which flows in the infrared LED. When designing a circuit, take into account this change in radiant power over time. The ratio of fluctuation in radiation intensity to fluctuation in optical output is 1 : 1.
I E (t) PO (t) = I E (0) PO (0)
2
2007-10-01
TLN201(F)
IF - Ta
120 1000
IFP - VFP
(typ.)
IF (mA)
100
500 300
Allowable forward current
80
60
Pulse forward current IFP (mA)
100
40
50 30
20
0 0
20
40
60
80
100
120
140
10
Ambient temperature Ta (C)
5 3 Pulse width 100s Repetitive Frequency = 100Hz Ta = 25C 1 2 3 4 5 6 7
IF - V F
100
(typ.)
1 0
50
Pulse forward voltage VFP (V)
Ta = 100C 75 50 25 0
(mA) Forward current IF
30
10
-25
5 3
1 1.1
IE - IF
1.2 1.3 1.4 1.5 1.6 1.7 1.8 3000
(typ.)
Forward voltage VF
(V)
1000 500
Pulse width 100s Repetitive Frequency = 100Hz Ta = 25C
(mW / sr)
300 Pulse
Wavelength Characteristic
1.0 IF = 50mA Ta = 25C 0.8
(typ.)
Radiant intensity IE
100 50 30
Relative intensity
0.6
10
0.4 5 0.2 3 DC
0 760
800
840
880
920
960
1000
1 1
3
10
30
100
300
1000
Wavelength (nm)
Forward current IF (mA)
3
2007-10-01
TLN201(F)
Radiation Pattern
(typ.)
10
Relative IE - Ta
(typ.)
(Ta = 25C)
Relative radiant intensity
10 0 10
5 3
20 30 40 50 60 70 80 90
20 30 40 50 60 70 80 90 1.0
1
0.5 0.3
0
0.2
0.4
0.6
0.8
0.1 -40
-20
0
20
40
60
80
100
120
140
Relative intensity
Ambient temperature Ta (C)
Coupling Characteristic With TPS601(F)
100 Ta = 25C 50 30 IE = 25.5mW / sr 3000 Ta = 25C
IFP - PW
(mA)
Allowable pulse forward current IFP (mA)
10 5 TPS601A(F) using sample IL = 226A at VCE = 3V 1 E = 0.1mW / cm2 0.5 0.3 d 0.1 1 3 5 10 30 50 100 300 500 1000 3
1000 500 300 f = 100Hz
Collector current IC
100 50 30
10kHz 5kHz
2kHz 1kHz
500Hz 200Hz
10 3
10
30
100
300
1m
3m
10m
Distance d (mm)
Pulse width
PW (s)
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2007-10-01
TLN201(F)
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
5
2007-10-01

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