 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 7MBR50U2A060 IGBT MODULE (U series) 600V / 50A / PIM IGBT Modules Features * Low VCE(sat) * Compact Package * P.C. Board Mount Module * Converter Diode Bridge Dynamic Brake Circuit Applications * Inverter for Motoe Drive * AC and DC Servo Drive Amplifier * Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltage Symbol Condition Rating 600 20 50 100 50 100 187 600 20 20 40 104 600 800 50 350 613 +150 -40 to +125 AC 2500 AC 2500 3.5 *1 VCES VGES IC Collector current ICP -IC -IC pulse Collector power disspation PC Collector-Emitter voltage VCES Gate-Emitter voltage VGES Collector current IC ICP Collector power disspation PC Repetitive peak reverse voltage VRRM Repetitive peak reverse voltage VRRM Average output current IO Surge current (Non-Repetitive) IFSM I2t (Non-Repetitive) I2t Tj Operating junction temperature Tstg Storage temperature Isolation between terminal and copper base *2 Viso voltage between thermistor and others *3 Mounting screw torque Inverter Converter Brake Continuous 1ms 1ms 1 device Unit V V A Continuous 1ms 1 device 50Hz/60Hz sine wave Tj=150C, 10ms half sine wave AC : 1 minute W V V A A W V V A A A 2s C C V N*m *1 Recommendable value : 2.5 to 3.5 N*m (M5) *2 All terminals should be connected together when isolation test will be done. *3 Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. IGBT Module Electrical characteristics (Tj=25C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Symbol ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) trr ICES IGES VCE(sat) (terminal) VCE(sat) (chip) ton tr toff tf IRRM VFM IRRM R B Symbol Condition VCE=600V, VGE=0V VCE=0V, VGE=20V VCE=20V, IC=50mA Tj=25C VGE=15V Tj=125C Ic=50A Tj=25C Tj=125C VGE=0V, VCE=10V, f=1MHz VCC=300V IC=50A VGE=15V RG=68 VGE=0V IF=50A Tj=25C Tj=125C Tj=25C Tj=125C Min. 6.2 465 3305 7MBR50U2A060 Characteristics Typ. Max. 1.0 200 6.7 7.7 2.25 2.55 2.45 1.85 2.15 3.6 0.42 1.20 0.24 0.60 0.05 0.42 1.20 0.03 0.45 2.00 2.35 2.05 1.60 1.65 0.35 1.0 200 1.85 2.15 2.15 1.70 2.00 0.45 1.20 0.15 0.60 0.37 1.20 0.04 0.45 1.0 1.20 1.50 1.10 1.0 5000 495 520 3375 3450 Characteristics Typ. Max. 0.05 0.67 1.10 1.20 0.82 Unit mA nA V V Inverter Input capacitance Turn-on time nF s Turn-off time Forward on voltage V Reverse recovery time Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage Brake IF=50A VCE=600V, VGE=0V VCE=0V, VGE=20V Tj=25C IC=20A Tj=125C VGE=15V Tj=25C Tj=125C VCC=300V IC=20A VGE=15V RG=270 VR=600V IF=50A VGE=0V VR=800V T=25C T=100C T=25/50C Condition s mA nA V Turn-on time Turn-off time Reverse current Forward on voltage Reverse current Resistance B value s Converter terminal chip mA V mA K Unit Item Thermistor Thermal resistance Characteristics Min. Inverter IGBT Inverter FWD Brake IGBT Converter Diode With thermal compound - Thermal resistance ( 1 device ) Rth(j-c) C/W Contact thermal resistance * Rth(c-f) * This is the value which is defined mounting on the additional cooling fin with thermal compound Equivalent Circuit Schematic [Converter] 21(P) [Brake] 22(P1) [Inverter] [Thermistor] 8 9 20(Gu) 18(Gv) 16(Gw) 1(R) 2(S) 3(T) 7(B) 19(Eu) 4(U) 17(Ev) 5(V) 15(Ew) 6(W) 14(Gb) 13(Gx) 12(Gy) 11(Gz) 10(En) 23(N) 24(N1) IGBT Module Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25C / chip 120 100 Collector current : Ic [ A ] 80 60 40 20 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] 0 0 1 2 10V VGE=20V 15V 12V Collector current : Ic [ A ] 120 100 80 60 40 20 7MBR50U2A060 [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 125C / chip VGE=20V 15V 12V 10V 8V 3 4 5 Collector-Emitter voltage : VCE [V] [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 120 100 Collector current : Ic [ A ] 80 60 40 20 0 0 1 2 3 4 Collector - Emitter voltage : VCE [ V ] Tj=25C Tj=125C [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25C / chip 10 8 6 4 Ic=100A Ic=50A Ic=25A 2 0 5 10 15 20 25 Collector-Emitter voltage : VCE [V] Gate - Emitter voltage : VGE [ V ] [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C 10.00 Collector-Emitter voltage : VCE [ V ] Cies Capacitanse : Cies, Coes, Cres [ nF ] 500 [ Inverter ] Dynamic Gate charge (typ.) Vcc=300V, Ic=50A, Tj= 25C 25 [V] Gate - Emitter voltage : VGE 400 20 1.00 Coes Cres 300 VGE 200 15 10 0.10 100 5 VCE 0 0 50 100 150 200 250 0.01 0 10 20 30 0 0 Collector-Emitter voltage : VCE [V] Gate charge : Qg [ nC ] IGBT Module [ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=68, Tj= 25C 1000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] toff 1000 toff 7MBR50U2A060 [ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=68, Tj=125C ton tr 100 ton tr 100 tf tf 10 10 0 20 40 60 80 Collector current : Ic [ A ] 0 20 40 60 80 Collector current : Ic [ A ] [ Inverter ] Switching time vs. Gate resistance (typ.) Vcc=300V, Ic=50A, VGE=15V, Tj= 25C 10000 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] ton toff 1000 tr 4 [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=68 Eon(125C) 3 Eon(25C) Eoff(125C) 2 Eoff(25C) 100 tf 1 Err(125C) Err(25C) 0 0 20 40 60 80 100 10 10 100 Gate resistance : Rg [ ] 1000 Collector current : Ic [ A ] [ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=300V, Ic=50A, VGE=15V, Tj= 125C 18 Switching loss : Eon, Eoff, Err [ mJ/pulse ] 16 14 12 10 8 6 4 2 0 10 100 Gate resistance : Rg [ ] 1000 Err 0 0 Eoff Eon Collector current : Ic [ A ] 120 100 80 60 40 20 [ Inverter ] Reverse bias safe operating area (max.) +VGE=15V,-VGE <= 15V, RG >= 68 ,Tj <= 125C 200 400 600 800 Collector - Emitter voltage : VCE [ V ] IGBT Module [ Inverter ] Forward current vs. Forward on voltage (ty p .) chip 120 T j=25C 100 Forward current : IF [ A ] T j=125C Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] 1000 7MBR50U2A060 [ Inverter ] Reverse recovery characteristics (ty p .) Vcc=300V, VGE=15V, Rg=68 trr (125C) 100 trr (25C) 80 60 Irr (125C) Irr (25C) 10 40 20 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Forward on volt age : VF [ V ] 1 0 20 40 60 80 Forward current : IF [ A ] [ Converter ] / [Anti p arallel diode ] Forward current vs. Forward on voltage (ty p .) chip 120 100 Forward current : IF [ A ] 80 60 40 T j=125C T j=25C 20 0 0.0 0.5 1.0 1.5 2.0 Forward on volt age : VFM [ V ] Transient thermal resistance (max.) 10.000 100 [ Thermistor ] Temperature characteristics (typ.) Thermal resistanse : Rth(j-c) [ C/W ] FWD[Inverter] IGBT[Brake] Resistance : R [ k ] 1.000 IGBT[Inverter] Conv.Diode 10 0.100 1 0.010 0.001 0.010 0.100 1.000 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Pulse widt h : Pw [ sec ] Temperature [ C ] IGBT Module [ Brake ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25C / chip 50 VGE=20V 15V 12V Collector current : Ic [A] 7MBR50U2A060 [ Brake ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 125C / chip 50 VGE=20V 15V 12V 40 Collector current : Ic [A] 40 30 10V 20 30 10V 20 10 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] 10 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] [ Brake ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 50 Collector - Emitter voltage : VCE [ V ] [ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25C / chip 10 40 Collector current : Ic [A] 8 30 6 Tj=25C Tj=125C 20 4 Ic=40A Ic=20A Ic=10A 10 2 0 0 1 2 3 4 0 5 10 15 20 25 Collector-Emitter voltage : VCE [V] Gate - Emitter voltage : VGE [ V ] [ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C 10.00 Collector-Emitter voltage : VCE [ V ] Capacitance : Cies, Coes, Cres [ nF ] 500 [ Brake ] Dynamic Gate charge (typ.) Vcc=300V, Ic=20A, Tj= 25C 25 Gate - Emitter voltage : VGE [ V ] Cies 1.00 400 VGE 20 300 15 Coes 0.10 Cres 200 10 100 VCE 5 0.01 0 10 20 30 0 0 40 80 120 0 Collector-Emitter voltage : VCE [V] Gate charge : Qg [ nC ] IGBT Module Outline Drawings, mm 7MBR50U2A060 |
Price & Availability of 7MBR50U2A060
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |